TA33-5M2D25KD0016

TA33-5M2D25KD0016

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    TA33-5M2D25KD0016 - Dual Value Chip Resistors, Center Tap - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
TA33-5M2D25KD0016 数据手册
TA 33 Vishay Sfernice Dual Value Chip Resistors, Center Tap FEATURES • Center tap feature • Resistor material: self-passivating Tantalum Nitride • Silicon substrate for good power dissipation • Low cost Actual Size • Wirebondable These tantalum chips combine excellent stability 0.07 % (2000 h, rated power at + 70 °C) with great power handling capacity. Two bonding pads per termination allow greater flexibility in hybrid layout design. TYPICAL PERFORMANCE ABS TCR 100 ppm/°C ABS TOL. 0.5 % TRACKING 5 ppm/°C RATIO 0.5 % SCHEMATIC RT R1 R2 RT = R1 + R2 with R1 = R2 Standard STANDARD ELECTRICAL SPECIFICATIONS TEST MATERIAL Resistance range Tracking TCR: Absolute Ohmic value Tolerance: Matching Power dissipation Stability Working voltage Operating temperature range Storage temperature range Noise Thermal EMF Shelf life stability ± 0.5 % standard 250 mW at + 25 °C, 125 mW at + 70 °C, 50 mW at + 125 °C ± 0.07 % typical, ± 0.1 maximum 50 VDC on RT - 55 °C to + 155 °C - 55 °C to + 155 °C < - 35 dB typical 0.01 µV/°C 100 ppm 1 year at + 25 °C MIL-STD-202 Method 308 2000 h at + 70 °C under Pn Ratio Absolute ± 100 ppm/°C (± 50 ppm/°C on request) 1/1 standard (unequal values: please consult) ± 0.5 %, ± 1 %, ± 2 % - 55 °C to + 155 °C SPECIFICATIONS TANTALUM NITRIDE 50 Ω to 1 MΩ ± 5 ppm/°C for RT = R1 + R2 - 55 °C to + 155 °C CONDITIONS * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 www.vishay.com 42 For technical questions, contact: sfer@vishay.com Document Number: 60066 Revision: 06-Oct-08 TA 33 Dual Value Chip Resistors, Center Tap Vishay Sfernice DIMENSIONS DIMENSION B INCHES 0.03 ± 0.004 0.03 ± 0.004 0.01 ± 0.015 0.004 0.006 0.006 MILLIMETERS 0.76 ± 0.10 0.76 ± 0.10 0.25 ± 0.40 0.10 0.15 0.15 Bonding Pad Area D A B C A E C F D E F MECHANICAL SPECIFICATIONS Resistive element Substrate material Passivation Bonding pads Tantalum Nitride Silicon Autopassivation Aluminum GLOBAL PART NUMBER INFORMATION New Global Part Numbering: TA33-5K2F25KD0016 (preferred part number format) T A 3 3 - 5 K 2 F 2 5 K D 0 0 1 6 GLOBAL MODEL R1 VALUE Decimal R, K or M ABS. TOLERANCE D = ± 0.5 % F = ± 1.0 % G = ± 2.0 % R2 VALUE Decimal R, K or M RAT. TOLERANCE D = ± 0.5 % OPTION leave blank if no option Historical Part Number example: TA 33 5K2 25K 1 % 0.5 % R0016 (will continue to be accepted) TA 33 HISTORICAL MODEL 5K2 25K R1/R2 VALUE 1 % 0.5 % ABS. TOLERANCE AND RATIO TOLERANCE R0016 OPTION Document Number: 60066 Revision: 06-Oct-08 For technical questions, contact: sfer@vishay.com www.vishay.com 43 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
TA33-5M2D25KD0016
1. 物料型号: - 型号:TA 33,来自Vishay Sfernice。

2. 器件简介: - 该器件为双值芯片电阻,具有中心抽头功能,由自钝化氮化钽材料制成,符合RoHS指令,使用硅基底以获得良好的功率耗散,成本较低。

3. 引脚分配: - 每个终端有两个焊接垫,允许在混合布局设计中具有更大的灵活性。

4. 参数特性: - 温度系数(TCR):100 ppm/°C(绝对值)和5 ppm/°C(追踪值)。 - 电阻值公差:0.5%和0.5%(追踪值)。 - 功率耗散:在+25°C时为250 mW,在+70°C时为125 mW,在+125°C时为50 mW。 - 稳定性:在+70°C下2000小时内典型值为0.07%,最大值为0.1%。 - 工作电压:在室温下为50 Vpc。 - 工作温度范围:-55°C至+155°C。 - 存储温度范围:-55°C至+155°C。 - 噪声:典型值低于-35 dB(MIL-STD-202方法308)。 - 热EMF:0.01 VC。 - 货架寿命稳定性:在+25°C下一年内为100 ppm。

5. 功能详解应用信息: - 这些钽芯片结合了优秀的稳定性和大功率处理能力,适合用于混合布局设计。

6. 封装信息: - 提供了详细的尺寸参数,包括英寸和毫米单位的尺寸数据。
TA33-5M2D25KD0016 价格&库存

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