TCDT1101

TCDT1100(G) Series Vishay Telefunken Optocoupler with Phototransistor Output Description The TCDT1100(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: nc Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. C 5 E 4 6 VDE Standards 94 9222 These couplers perform safety functions according to the following equipment standards: D VDE 0884 Optocoupler for electrical safety requirements 1 A (+) 2 C (–) 3 nc D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 Safety for mains-operated electronic and related household apparatus Order Instruction Ordering Code CTR Ranking 1) TCDT1100/ TCDT1100G > 40% TCDT1101/ TCDT1101G1) 40 to 80% TCDT1102/ TCDT1102G1) 63 to 125% TCDT1103/ TCDT1103G1) 100 to 200% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 208 Rev. A3, 11–Jan–99 TCDT1100(G) Series Vishay Telefunken Features Approvals: D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation ≥ 0.75 mm D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 General features: D VDE 0884, Certificate number 94778 VDE 0884 related features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110/ resp. IEC 664) D Rated impulse voltage (transient overvoltage) D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS VIOTM = 6 kV peak D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D CTR offered in 4 groups D Base not connected D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Symbol VCEO VECO IC ICM PV Tj Symbol VIO Ptot Tamb Tstg Tsd Value 5 60 3 100 125 Unit V mA A mW °C tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Value 32 7 50 100 150 125 Unit V V mA mA mW °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter AC Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb ≤ 25°C Value 3.75 250 –55 to +100 –55 to +125 260 Unit kV mW °C °C °C 2 mm from case t ≤ 10 s Rev. A3, 11–Jan–99 209 TCDT1100(G) Series Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V V nA 200 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 110 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 10 mA Type TCDT1100(G) TCDT1101(G) TCDT1102(G) TCDT1103(G) Symbol CTR CTR CTR CTR Min. 0.40 0.40 0.63 1.00 Typ. Max. 0.80 1.25 2.00 Unit 210 Rev. A3, 11–Jan–99 TCDT1100(G) Series Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV °C Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge test voltage – tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C (construction test only) 300 V VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W – Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 25 50 IR-Diode Isi ( mA ) Phototransistor Psi ( mW ) VIOWM VIORM P tot 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 75 100 125 150 13930 94 9182 Tsi – Safety Temperature ( °C ) Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A3, 11–Jan–99 211 TCDT1100(G) Series Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W (see figure 3) g ) Symbol td tr tf ts ton toff ton toff Typ. 4.0 7.0 6.7 0.3 11.0 7.0 25.0 42.5 Unit ms ms ms ms ms ms ms ms VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 4) g ) 0 IF RG = 50 W tp 0.01 T IF +5V IC = 5 mA; Adjusted trough input amplitude 96 11698 + IF 0 tp tp = 50 ms Channel I 50 W 95 10900 t Oscilloscope RL ≥ 1 MW CL ≤ 20 pF IC 100% 90% 100 W Channel II Figure 3. Test circuit, non-saturated operation 10% 0 tr IF RG = 50 W tp 0.01 T tp = 50 ms IF = 10 mA +5V IC tp tion td tr ton (= td + tr) Channel I 50 W 95 10843 t ts toff tf td ton pulse duradelay time rise time turn-on time 0 + ts tf toff (= ts + tf) storage time fall time turn-off time Oscilloscope RL ≥ 1 MW CL ≤ 20 pF Channel II 1 kW Figure 5. Switching times Figure 4. Test circuit, saturated operation 212 Rev. A3, 11–Jan–99 TCDT1100(G) Series Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot – Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 10000 ICEO– Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000 100 10 1 40 80 120 95 11026 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 6. Total Power Dissipation vs. Ambient Temperature 1000.0 IC – Collector Current ( mA ) Figure 9. Collector Dark Current vs. Ambient Temperature 100 IF=50mA 20mA 10mA 10 5mA I F – Forward Current ( mA ) 100.0 10.0 2mA 1 1mA 1.0 0.1 0 96 11862 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 95 11054 0.1 1 10 100 VCE – Collector Emitter Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Tamb – Ambient Temperature ( °C ) VCE=5V IF=10mA Figure 10. Collector Current vs. Collector Emitter Voltage V CEsat – Collector Emitter Saturation Voltage ( V ) 1.0 CTR rel – Relative Current Transfer Ratio 0.8 0.6 0.4 0.2 CTR=50% 20% 0 1 10% 10 IC – Collector Current ( mA ) 100 96 11920 95 11055 Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Rev. A3, 11–Jan–99 213 TCDT1100(G) Series Vishay Telefunken 1000 CTR – Current Transfer Ratio ( % ) 20 ton 15 Non Saturated Operation VS=5V RL=100W VCE=5V 100 t on / t off – Turn on / Turn off Time ( m s ) 10 toff 10 5 1 0.1 95 11057 0 1 10 100 95 11016 0 2 4 6 8 10 IF – Forward Current ( mA ) IC – Collector Current ( mA ) Figure 12. Current Transfer Ratio vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 50 toff 40 Figure 14. Turn on / off Time vs. Collector Current Type 30 ton Saturated Operation VS=5V RL=1kW 0 5 10 15 20 Date Code (YM) 20 10 0 XXXXXX 918 A TK 63 0884 V DE 15090 Production Location Safety Logo 95 11017 IF – Forward Current ( mA ) Coupling System Indicator Company Logo Figure 13. Turn on / off Time vs. Forward Current Figure 15. Marking example 214 Rev. A3, 11–Jan–99 TCDT1100(G) Series Vishay Telefunken Dimensions of TCDT110.G in mm weight: ca. 0.50 g creepage distance: air path: 8 mm y y 8 mm after mounting on PC board 14771 Dimensions of TCDT110. in mm weight: 0.50 g creepage distance: air path: 6 mm y y 6 mm after mounting on PC board 14770 Rev. A3, 11–Jan–99 215