TCDT1122G

TCDT1120/ TCDT1120G Vishay Semiconductors Optocoupler, Phototransistor Output Features • • • • • Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection Four CTR groups available Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17201_1 nc 6 C 5 E 4 Agency Approvals • UL1577, File No. E76222 System Code A, Double Protection • BSI IEC60950 IEC60065 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • FIMKO 1 A (+) 2 C (–) 3 nc V DE e3 Pb Pb-free VDE Standards These couplers perform safety functions according to the following equipment standards: DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements Applications Switch-mode power supplies Line receiver Computer peripheral interface Microprocessor system interface Reinforced Isolation provides circuit protection against electrical shock (Safety Class II) Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): • For appl. class I - IV at mains voltage ≤ 300 V • For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2. IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) VDE 0804 IEC 60065 Telecommunication apparatus and data processing Safety for mains-operated electronic and related household apparatus Order Information Part TCDT1120 TCDT1122 Remarks CTR > 40 %, DIP-6 CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 CTR > 40 %, DIP-6 CTR 63 - 125 %, DIP-6 CTR 100 - 200 %, DIP-6 CTR 160 - 320 %, DIP-6 Description The TCDT1120(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. TCDT1123 TCDT1124 TCDT1120G TCDT1122G TCDT1123G TCDT1124G G = Leadform 10.16 mm; G is not marked on the body Document Number 83532 Rev. 1.6, 26-Oct-04 www.vishay.com 1 TCDT1120/ TCDT1120G Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature t p ≤ 10 µ s Test condition Symbol VR IF IFSM Pdiss Tj Value 5 60 3 100 125 Unit V mA A mW °C Output Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp ≤ 10 ms Test condition Symbol VCBO VCEO VECO IC ICM Pdiss Tj Value 90 90 7 50 100 150 125 Unit V V V mA mA mW °C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 2 mm from case, t ≤ 10 s t = 1 min Test condition Symbol VISO Ptot Tamb Tstg Tsld Value 3750 250 - 55 to + 100 - 55 to + 125 260 Unit VRMS mW °C °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Junction capacitance Test condition IF = 50 mA VR = 0, f = 1 MHz Symbol VF Cj Min Typ. 1.25 50 Max 1.6 Unit V pF www.vishay.com 2 Document Number 83532 Rev. 1.6, 26-Oct-04 TCDT1120/ TCDT1120G Vishay Semiconductors Output Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector-emitter cut-off current Test condition IC = 100 µA IC = 1 mA IE = 100 µA VCE = 20 V, If = 0 Symbol VCBO VCEO VECO ICEO Min 90 90 7 150 Typ. Max Unit V V V nA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test condition IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz Symbol VCEsat fc Ck 110 0.3 Min Typ. Max 0.3 Unit V kHz pF Current Transfer Ratio Parameter IC/IF Test condition VCE = 5 V, IF = 1 mA Part TCDT1120 TCDT1120G TCDT1122 TCDT1122G TCDT1123 TCDT1123G TCDT1124 TCDT1124G VCE = 5 V, IF = 10 mA TCDT1120 TCDT1120G TCDT1122 TCDT1122G TCDT1123 TCDT1123G TCDT1124 TCDT1124G Symbol CTR CTR CTR CTR CTR CTR CTR CTR Min 10 15 30 60 40 63 100 160 125 200 320 Typ. Max Unit % % % % % % % % Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Forward current Test condition Symbol IF Min Typ. Max 130 Unit mA Output Parameter Power dissipation Test condition Symbol Pdiss Min Typ. Max 265 Unit mW Document Number 83532 Rev. 1.6, 26-Oct-04 www.vishay.com 3 TCDT1120/ TCDT1120G Vishay Semiconductors Coupler Parameter Rated impulse voltage Safety temperature Test condition Symbol VIOTM Tsi Min Typ. Max 6 150 Unit kV °C Insulation Rated Parameters Parameter Partial discharge test voltage Routine test Partial discharge test voltage Lot test (sample test) Insulation resistance Test condition 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V VIO = 500 V, Tamb ≤ 100 °C VIO = 500 V, Tamb ≤ 150 °C (construction test only) Symbol Vpd VIOTM Vpd RIO RIO RIO Min 1.6 6 1.3 1012 10 11 9 Typ. Max Unit kV kV kV Ω Ω Ω 10 VIOTM 300 Psi (mW) 250 200 150 100 I si (mA) 50 0 0 95 10934 t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM 0 13930 t3 ttest t4 t1 tTr = 60 s t2 tstres 25 50 75 100 125 150 175 200 Tamb ( °C ) t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 Switching Characteristics Parameter Test condition Symbol Unit TCDT1120 TCDT1120G TCDT1123 TCDT1123G TCDT1124 TCDT1124G IF mA 10 10 10 10 tD µs 2.5 2.5 2.8 2.0 tr µs 3.0 3.0 4.2 4.0 Current Delay Rise time Storage Fall time Turn-on time Turn-off time Turn-on time Turn-off time VS = 5 V, RL = 100 Ω (see figure 3) tS µs 0.3 0.3 0.3 0.3 tf µs 3.7 3.7 4.7 4.7 ton µs 5.5 5.5 7.0 6.0 toff µs 4.0 4.0 5.0 5.0 VS = 5 V, RL = 1 kΩ (see figure 4) ton µs 16.5 16.5 21.5 20.0 toff µs 22.5 22.5 37.5 50.0 www.vishay.com 4 Document Number 83532 Rev. 1.6, 26-Oct-04 TCDT1120/ TCDT1120G Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) CTRrel – Relative Current Transfer Ratio IF 0 IC 100% 90% tp 96 11698 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 Tamb – Ambient Temperature (°C ) V CE=5V I F=10mA t 10% 0 tr td ton ts tf toff ts tf toff (= ts + tf) t storage time fall time turn-off time tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time 96 11918 Figure 3. Switching Times Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature 10000 ICEO– Collector Dark Current, with open Base ( nA) 300 P tot –Total Power Dissipation ( mW) Coupled device 250 200 Phototransistor V CE=30V I F=0 1000 150 IR-diode 100 50 0 0 40 80 120 100 10 1 0 95 11038 25 50 75 100 96 1 1700 Tamb – Ambient T emperature( °C ) Tamb – Ambient Temperature ( °C ) Figure 4. Total Power Dissipation vs. Ambient Temperature Figure 7. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA ) 1000 I F - Forward Current ( mA ) V CE=5V 10 100 10 1 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 0.01 0.1 95 11040 1 10 100 V F - Forward Voltage ( V ) I F – Forward Current ( mA ) Figure 5. Forward Current vs. Forward Voltage Figure 8. Collector Current vs. Forward Current Document Number 83532 Rev. 1.6, 26-Oct-04 www.vishay.com 5 TCDT1120/ TCDT1120G Vishay Semiconductors 1000 TCDT1123(G) V CE=5V 100 IC – Collector Current ( mA ) I F=50mA 20mA 10 10mA 5mA 1 CTR – Current ransfer Ratio ( % ) T 100 10 2mA 1mA CNY75A 1 0.1 1 10 100 14797 0.1 0.1 95 11041 1 10 100 I F – Forward Current ( mA ) V CE – Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage Figure 12. Current Transfer Ratio vs. Forward Current VCEsat Collector Emitter Saturation V oltage (V) – CTR – Current Transfer Ratio ( % ) 1.0 CTR=50% 0.8 CNY75A 0.6 1000 TCDT1124(G) V CE=5V 100 0.4 20% 0.2 10% 0 1 10 I C – Collector Current ( mA ) 100 10 1 0.1 14798 1 10 100 I F – Forward Current ( mA ) 95 11034 Figure 10. Collector Emitter Saturation Voltage vs. Collector Current ton / toff –Turn on / Turn off Time ( µs ) Figure 13. Current Transfer Ratio vs. Forward Current CTR – Current Transfer Ratio ( % ) 1000 TCDT1122(G) V CE=5V 100 50 TCDT1122(G) Saturated Operation V S=5V RL=1k Ω toff 20 10 0 40 30 10 ton 1 0.1 14796 1 10 100 14799 0 5 10 15 20 I F – Forward Current ( mA ) I F – Forward Current ( mA ) Figure 11. Current Transfer Ratio vs. Forward Current Figure 14. Turn on / off Time vs. Forward Current www.vishay.com 6 Document Number 83532 Rev. 1.6, 26-Oct-04 TCDT1120/ TCDT1120G Vishay Semiconductors ton / toff –Turn on / Turn off Time ( µ s ) ton / toff –Turn on / Turn off Time ( µ s ) 50 TCDT1123(G) Saturated Operation V S=5V RL=1k Ω toff 20 10 ton 0 0 5 10 15 20 20 TCDT1123(G) Non Saturated Operation V S=5V RL=100 Ω 40 15 30 10 ton 5 toff 0 0 2 4 6 8 10 14800 I F – Forward Current ( mA ) 14803 I C – Collector Current ( mA ) Figure 15. Turn on / off Time vs. Forward Current Figure 18. Turn on / off Time vs. Collector Current ton / toff –Turn on / Turn off Time ( µs ) 40 TCDT1124(G) Saturated Operation V S=5V RL=1k Ω ton / toff –Turn on / Turn off Time ( µ s ) 50 toff 20 TCDT1124(G) Non Saturated Operation V S=5V RL=100 Ω 15 ton 10 toff 5 30 20 10 ton 0 0 5 10 15 20 0 0 14804 2 4 6 8 10 14801 I F – Forward Current ( mA ) I C – Collector Current ( mA ) Figure 16. Turn on / off Time vs. Forward Current Figure 19. Turn on / off Time vs. Collector Current ton / toff –Turn on / Turn off Time ( µ s ) 20 TCDT1122(G) Non Saturated Operation V S=5V RL=100 Ω 15 ton 10 toff 5 0 0 14802 2 4 6 8 10 I C – Collector Current ( mA ) Figure 17. Turn on / off Time vs. Collector Current Document Number 83532 Rev. 1.6, 26-Oct-04 www.vishay.com 7 TCDT1120/ TCDT1120G Vishay Semiconductors Package Dimensions in mm 14770 Package Dimensions in mm 14771 www.vishay.com 8 Document Number 83532 Rev. 1.6, 26-Oct-04 TCDT1120/ TCDT1120G Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83532 Rev. 1.6, 26-Oct-04 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1