TCED1100G

TCED1100(G) up to TCED4100 Vishay Telefunken Optocoupler with Photodarlington Output Description The TCED1100/ TCED2100/ TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14925 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. Coll. Emitter VDE Standards These couplers perform safety functions according to the following equipment standards: Anode Cath. 4 PIN 8 PIN 16 PIN 14580 D VDE 0884 Optocoupler for electrical safety requirements D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 Safety for mains-operated electronic and related household apparatus C Order Instruction Ordering Code CTR Ranking 1) TCED1100/ TCED1100G 600% TCED2100 600% TCED4100 600% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 4 Pin = Single channel 8 Pin = Dual channel 16 Pin = Quad channel 234 Rev. A3, 11–Jan–99 TCED1100(G) up to TCED4100 Vishay Telefunken Features Approvals: D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI ≥ 175 D Thickness through insulation ≥ 0.75 mm D Internal creepage distance > 4 mm General features: D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 11992 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 – Double Protection D CSA (C–UL) 1577 recognized, file number E-76222 – Double Protection D VDE 0884, Certificate number 115667 VDE 0884 related features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCED2100/ TCED4100 optional; suffix letter ‘G’ is not marked on the optocoupler D Coupling System U D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Symbol VCEO VECO IC ICM PV Tj Symbol VIO Ptot Tamb Tstg Tsd Value 6 60 1.5 100 125 Unit V mA A mW °C tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Value 35 7 80 100 150 125 Unit V V mA mA mW °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions AC isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case t ≤ 10 s Value 5 250 –40 to +100 –55 to +125 260 Unit kV mW °C °C °C Rev. A3, 11–Jan–99 235 TCED1100(G) up to TCED4100 Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = 20 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.15 50 Max. 1.4 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 1 mA IE = 100 mA VCE = 10 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V V nA 15 100 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 20 mA, IC = 5 mA VCE = 5 V, IF = 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 1 Unit V kHz pF 10 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 2 V, IF = 1 mA Type TCED1100(G)/ TCED2100/ TCED4100 Symbol CTR Min. 6.0 Typ. 8.0 Max. Unit 236 Rev. A3, 11–Jan–99 TCED1100(G) up to TCED4100 Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 8 150 Unit kV °C Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge test voltage – tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C (construction test only) 300 V VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 8 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W – Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 25 50 IR-Diode Isi ( mA ) Photodarlington Psi ( mW ) VIOWM VIORM P tot 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 75 100 125 150 13930 14887 Tamb – Ambient Temperature ( °C ) Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 Rev. A3, 11–Jan–99 237 TCED1100(G) up to TCED4100 Vishay Telefunken Switching Characteristics Parameter Rise time Fall time Test Conditions VCC = 2 V, IC = 10 mA, RL = 100 W (see figure 3) g ) Symbol tr tf Typ. 300 250 Unit ms ms 0 IF IF + VCC 96 11698 Adjusted through IC= 10 mA ; input amplitude IF 0 tp RG = 50 W tp 0.01 T t1 = 1 ms + t Channel I IC 50 W Channel II RL Oscilloscope RI CI 1 M W 20 pF 100% 90% 14779 w w Figure 3. Test circuit 10% 0 tr td ton tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time ts toff ts tf toff (= ts + tf) tf t storage time fall time turn-off time Figure 4. Switching times 238 Rev. A3, 11–Jan–99 TCED1100(G) up to TCED4100 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 1.3 IF=10mA VF – Forward Voltage ( V ) ICEO– Collector Dark Current, with open Base ( nA ) 1.2 1.1 1.0 0.9 0.8 0 14389 100000 10000 1000 100 10 1 20 40 60 80 100 14392 VCE=10V IF=0 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 5. Forward Voltage vs. Ambient Temperature 1000.0 Figure 8. Collector Dark Current vs. Ambient Temperature 1000.0 I F – Forward Current ( mA ) VCE=2V IC – Collector Current ( mA ) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 14393 100.0 100.0 10.0 10.0 1.0 1.0 0.1 14390 0.1 0.1 1.0 10.0 100.0 Figure 6. Forward Current vs. Forward Voltage 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 –30–20–10 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 14394 IF – Forward Current ( mA ) Figure 9. Collector Current vs. Forward Current CTR rel – Relative Current Transfer Ratio VCE=5V IF=1mA IC – Collector Current ( mA ) 100.0 IF=2mA 1mA 10.0 0.5m A 1.0 0.2mA 0.1m A 0.1 0.1 1.0 10.0 100.0 14391 Figure 7. Relative Current Transfer Ratio vs. Ambient Temperature VCE – Collector Emitter Voltage ( V ) Figure 10. Collector Current vs. Collector Emitter Voltage Rev. A3, 11–Jan–99 239 TCED1100(G) up to TCED4100 Vishay Telefunken V CEsat – Collector Emitter Saturation Voltage ( V ) 1.1 CTR – Current Transfer Ratio ( % ) 1.0 0.9 0.8 0.7 0.6 1 CTR=200 % 100 % 50 % 25 % 10000 VCE=2V 1000 100 10 IC – Collector Current ( mA ) 100 14396 10 0.1 1.0 10.0 100.0 14395 IF – Forward Current ( mA ) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 13. Current Transfer Ratio vs. Forward Current Pin 1 Indication Type ED1100 820UTK63 15084 Date Code (YM) Coupling System Indicator Company Logo Production Location Figure 12. Marking example 240 Rev. A3, 11–Jan–99 TCED1100(G) up to TCED4100 Vishay Telefunken Dimensions of TCED1100 in mm weight: creepage distance: air path: ca. 0.25 g 6 mm 6 mm y y after mounting on PC board 96 12231 Dimensions of TCED1100G in mm Leadform 10.16 mm (G_type) weight: creepage distance: air path: ca. 0.25 g 8 mm 8 mm y y after mounting on PC board 9612234 Rev. A3, 11–Jan–99 241 TCED1100(G) up to TCED4100 Vishay Telefunken Dimensions of TCED2100 in mm weight: creepage distance: air path: ca. 0.5 g 6 mm 6 mm y y after mounting on PC board 96 12228 Dimensions of TCED4100 in mm weight: creepage distance: air path: ca. 1.1 g 6 mm 6 mm y y after mounting on PC board 96 12227 242 Rev. A3, 11–Jan–99