TCET1203G

TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Optocoupler, Phototransistor Output (Single, Dual Channel) Features • • • • • • • Extra low coupling capacity - typical 0.2 pF High Common Mode Rejection CTR offered in 5 groups Low temperature coefficient of CTR Available in single or dual channel Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC E C 4 3 1 2 C Agency Approvals • UL1577, File No. E76222 System Code U, Double Protection • CSA 22.2 bulletin 5A, Double Protection • BSI IEC60950 IEC60065 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • FIMKO A 4 PIN 8 PIN 15123 C V DE e3 Pb Pb-free VDE Standards These couplers perform safety functions according to the following equipment standards: Applications Switch-mode power supplies Line receiver Computer peripheral interface Microprocessor system interface Reinforced Isolation provides circuit protection against electrical shock (Safety Class II) Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): • For appl. class I - IV at mains voltage ≤ 300 V • For appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-2(VDE0884)/ DIN EN 607475-5 pending, table 2, suitable for: DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending Optocoupler for electrical safety requirements IEC 60950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) VDE 0804 IEC 60065 Telecommunication apparatus and data processing Safety for mains-operated electronic and related household apparatus Description The TCET1200/ TCET2200 consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-pin (single channel) or 8-pin plastic dual inline package. Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 1 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Order Information Part TCET1200 TCET1201 TCET2200 TCET1202 TCET1203 TCET1204 TCET1200G TCET1201G TCET1202G TCET1203G TCET1204G Remarks CTR 50 - 600 %, DIP-4 CTR 40 - 80 %, DIP-4 CTR 50 - 600 %, DIP-8 CTR 63 - 125 %, DIP-4 CTR 100 - 200 %, DIP-4 CTR 160 - 320 %, DIP-4 CTR 50 - 600 %, DIP-4 CTR 40 - 80 %, DIP-4 CTR 63 - 125 %, DIP-4 CTR 100 - 200 %, DIP-4 CTR 160 - 320 %, DIP-4 G = Leadform 10.16 mm; G is not marked on the body Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature t p ≤ 10 µ s Test condition Symbol VR IF IFSM Pdiss Tj Value 6 60 1.5 100 125 Unit V mA A mW °C Output Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature tp/T = 0.5, tp ≤ 10 ms Test condition Symbol VCEO VECO IC ICM Pdiss Tj Value 70 7 50 100 150 125 Unit V V mA mA mW °C Coupler Parameter Isolation test voltage (RMS) Total power dissipation Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case t ≤ 10 s Test condition Symbol VISO Ptot Tamb Tstg Tsld Value 5000 250 - 40 to + 100 - 55 to + 125 260 Unit VRMS mW °C °C °C www.vishay.com 2 Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Junction capacitance Test condition IF = ± 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min Typ. 1.25 50 Max 1.6 Unit V pF Output Parameter Collector emitter voltage Emitter collector voltage Collector-emitter cut-off current Test condition IC = 1 mA IE = 100 µA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min 70 7 10 100 Typ. Max Unit V V nA Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test condition IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 Ω f = 1 MHz Symbol VCEsat fc Ck 110 0.3 Min Typ. Max 0.3 Unit V kHz pF Current Transfer Ratio Parameter IC/IF Test condition VCE = 5 V, IF = 5 mA VCE = 5 V, IF = 10 mA Part TCET1200 TCET1200G TCET1201 TCET1201G TCET1202 TCET1202G TCET1203 TCET1203G TCET1204 TCET1204G VCE = 5 V, IF = 5 mA TCET2200 Symbol CTR CTR CTR CTR CTR CTR Min 50 40 63 100 160 50 Typ. Max 600 80 125 200 320 600 Unit % % % % % % Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Forward current Test condition Symbol IF Min Typ. Max 130 Unit mA Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 3 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Output Parameter Power dissipation Test condition Symbol Pdiss Min Typ. Max 265 Unit mW Coupler Parameter Rated impulse voltage Safety temperature Test condition Symbol VIOTM Tsi Min Typ. Max 8 150 Unit kV °C Insulation Rated Parameters Parameter Partial discharge test voltage Routine test Partial discharge test voltage Lot test (sample test) Insulation resistance Test condition 100 %, ttest = 1 s tTr = 60 s, ttest = 10 s, (see figure 2) VIO = 500 V VIO = 500 V, Tamb = 100 °C VIO = 500 V, Tamb = 150 °C (construction test only) Symbol Vpd VIOTM Vpd RIO RIO RIO Min 1.6 8 1.3 1012 1011 109 Typ. Max Unit kV kV kV Ω Ω Ω VIOTM Ptot – Total Power Dissipation ( mW ) 300 250 200 150 100 50 0 0 25 50 75 100 125 150 13930 Phototransistor Psi ( mW ) VPd VIOWM VIORM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s IR-Diode Isi ( mA ) 0 t1 tTr = 60 s t2 t3 ttest t4 tstres 94 9182 Tsi – Safety Temperature ( °C ) t Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 www.vishay.com 4 Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Switching Characteristics Parameter Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time Test condition VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) Symbol td tr ton ts tf toff ton toff Min Typ. 3.0 3.0 6.0 0.3 4.7 5.0 9.0 10.0 Max Unit µs µs µs µs µs µs µs µs IF 0 IF IF +5V IC = 2 mA; adjusted through input amplitude 96 11698 0 IC 100% 90% tp t RG = 50 W tp = 0.01 T tp = 50 s Channel I Channel II 50 W 100 W Oscilloscope RL = 1 MW CL = 20 pF 10% 0 tr td ton pulse duration delay time rise time turn-on time ts tf toff t storage time fall time turn-off time 95 10804 tp td tr ton (= td + tr) ts tf toff (= ts + tf) Figure 3. Test circuit, non-saturated operation Figure 5. Switching Times 0 IF IF = 10 mA +5V IC RG = 50 Ω tp = 0.01 T tp = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope RL≥ 1M Ω CL ≤ 20 pF 95 10843 Figure 4. Test circuit, saturated operation Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 5 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 I CEO - Collector Dark Current, with open Base ( nA ) 300 P tot –Total Power Dissipation ( mW) Coupled device 250 200 Phototransistor V CE = 20 V IF = 0 1000 150 IR-diode 100 50 0 0 40 80 120 100 10 1 0 95 11026 25 50 75 100 96 1 1700 Tamb – Ambient T emperature( °C ) Tamb - Ambient Temperature ( ° C ) Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 9. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA ) 1000 I F - Forward Current ( mA ) V CE=5V 10 100 10 1 1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 0.01 0.1 95 11027 1 10 100 V F - Forward Voltage ( V ) I F – Forward Current ( mA ) Figure 7. Forward Current vs. Forward Voltage Figure 10. Collector Current vs. Forward Current CTRrel – Relative Current Transfer Ratio 2.0 IC – Collector Current ( mA) 100 V CE=5V I F=5mA 20mA I F=50mA 10 10mA 5mA 2mA 1mA 0.1 0.1 95 10985 1.5 1.0 1 0.5 0 –25 0 25 50 75 1 10 100 95 11025 Tamb – Ambient Temperature ( °C ) V CE – Collector Emitter Voltage ( V ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Figure 11. Collector Current vs. Collector Emitter Voltage www.vishay.com 6 Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors VCEsat– Collector Emitter Saturation Voltage ( V) 20% 0.8 CTR=50% 0.6 ton / toff –Turn on / Turn off Time ( µ s ) 1.0 50 Saturated Operation V S=5V RL=1k Ω 40 30 toff 20 10 0 ton 0 5 10 15 20 0.4 0.2 0 1 10 I C – Collector Current ( mA ) 100 10% 95 11028 95 11031 I F – Forward Current ( mA ) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1000 V CE=5V 100 Figure 15. Turn on / off Time vs. Forward Current CTR – Current Transfer Ratio ( % ) 10 1 0.1 95 11029 1 10 100 I F – Forward Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current ton / toff –Turn on / Turn off Time ( µ s ) 10 Non Saturated Operation V S=5V RL=100 Ω 8 ton 6 toff 4 2 0 0 2 4 6 10 95 11030 I C – Collector Current ( mA ) Figure 14. Turn on / off Time vs. Collector Current Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 7 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Package Dimensions in mm 14789 Package Dimensions in mm 14792 www.vishay.com 8 Document Number 83501 Rev. 1.5, 26-Oct-04 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Package Dimensions in mm 14784 Document Number 83501 Rev. 1.5, 26-Oct-04 www.vishay.com 9 TCET1200/ TCET1200G/ TCET2200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 10 Document Number 83501 Rev. 1.5, 26-Oct-04