TCET1600G

TCET1600 up to TCET4600 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET1600/ TCET2600/ TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14925 D For appl. class I – IV at mains voltage ≤ 300 V D For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for: Coll. Emitter Computer peripheral interface, microprocessor system interface, telecom equipment. These couplers perform safety functions according to the following equipment standards: D VDE 0884 Optocoupler for electrical safety requirements Anode Cath. 4 PIN 8 PIN 16 PIN D IEC 950/EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) D VDE 0804 Telecommunication apparatus and data processing D IEC 65 Safety for mains-operated electronic and related household apparatus C Order Instruction Ordering Code CTR Ranking TCET1600/ TCET1600G1) >20% TCET2600 >20% TCET4600 >20% 1) G = Leadform 10.16 mm; G is not market on the body Remarks 4 Pin = Single channel 8 Pin = Dual channel 16 Pin = Quad channel Rev. A4, 11–Jan–99 253 13947 VDE Standards TCET1600 up to TCET4600 Vishay Telefunken Features Approvals: D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI ≥ 175 D Thickness though insulation ≥ 0.75 mm D Internal creepage distance > 4 mm D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 11027 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 – Double Protection General features: D CSA (C–UL) 1577recognized, file number E-76222 – Double Protection D VDE 0884, Certificate number 115667 VDE 0884 related features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 /resp. IEC 664) D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partical discharge test voltage) Vpd = 1.6 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Rated recurring peak voltage (repetitive) VIORM = 600 VRMS D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection D Low temperature coefficient of CTR D G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCET2600/ TCET4600 optional; suffix letter ‘G’ is not marked on the optocoupler D Coupling System U Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Symbol VCEO VECO IC ICM PV Tj Symbol VIO Ptot Tamb Tstg Tsd Value 6 ±60 ±1.5 100 125 Unit V mA A mW °C tp ≤ 10 ms Tamb ≤ 25°C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Value 70 7 50 100 150 125 Unit V V mA mA mW °C Unit kV mW °C °C °C tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25°C Coupler Parameter Test Conditions Isolation test voltage (RMS) t = 1 min Total power dissipation Tamb ≤ 25°C Operating ambient temperature range Storage temperature range Soldering temperature 2 mm from case t ≤ 10 s Value 5 250 –40 to +100 –55 to +125 260 254 Rev. A4, 11–Jan–99 TCET1600 up to TCET4600 Vishay Telefunken Electrical Characteristics (Tamb = 25°C) Input (Emitter) Parameter Forward voltage Junction capacitance Test Conditions IF = ± 50 mA VR = 0 V, f = 1 MHz Symbol VF Cj Min. Typ. 1.25 50 Max. 1.6 Unit V pF Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 100 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VCEO ICEO Min. 70 7 Typ. Max. Unit V V nA 100 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF ± 10 mA, IC = 1 mA VCE = 5 V, IF ± 10 mA, RL = 100 W f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF 100 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = ± 5 mA Type TCET1600 up to TCET4600 Symbol CTR Min. 0.20 Typ. Max. 3.0 Unit Rev. A4, 11–Jan–99 255 TCET1600 up to TCET4600 Vishay Telefunken Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb ≤ 25°C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 8 150 Unit kV °C Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage – 100%, ttest = 1 s Routine test Partial discharge test voltage – tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb = 100°C VIO = 500 V, Tamb = 150°C (construction test only) 300 V VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 8 1.3 10 12 10 11 10 9 Typ. Max. Unit kV kV kV W W W – Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 25 50 IR-Diode Isi ( mA ) Phototransistor Psi ( mW ) VIOWM VIORM P tot 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 75 100 125 150 13930 94 9182 Tsi – Safety Temperature ( °C ) Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 256 Rev. A4, 11–Jan–99 TCET1600 up to TCET4600 Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Turn-on time Storage time Fall time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 2 mA, RL = 100 W (see figure 3) g ) Symbol td tr ton ts tf toff ton toff Typ. 3.0 3.0 6.0 0.3 4.7 5.0 9.0 10.0 Unit ms ms ms ms ms ms ms ms VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 4) g ) 0 RG = 50 W tp T = 0.01 tp = 50 ms IF IF +5V IC = 2 mA ; adjusted through input amplitude IF 0 tp IC Channel I Channel II Oscilloscope RL > 1 MW CL < 20 pF 100% 90% 96 11698 t 50 W 13343 100 W Figure 3. Test circuit, non-saturated operation 10% 0 tr td ts toff pulse duradelay time rise time turn-on time ts tf toff (= ts + tf) tf t 0 RG = 50 W tp T = 0.01 tp = 50 ms IF IF = 10 mA +5V IC tp tion td tr ton (= td + tr) ton storage time fall time turn-off time Channel I Channel II Oscilloscope RL > 1 MW CL < 20 pF 50 W 13344 1 kW Figure 4. Test circuit, saturated operation Figure 5. Switching times Rev. A4, 11–Jan–99 257 TCET1600 up to TCET4600 Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot – Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 150 IR-diode 100 50 0 0 96 11700 10000 ICEO– Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000 100 10 1 40 80 120 95 11026 0 25 50 75 100 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 6. Total Power Dissipation vs. Ambient Temperature 1000.0 IC – Collector Current ( mA ) Figure 9. Collector Dark Current vs. Ambient Temperature 100 VCE=5V 10 I F – Forward Current ( mA ) 100.0 10.0 1 1.0 0.1 0.1 0 96 11862 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF – Forward Voltage ( V ) 95 11027 0.1 1 10 100 IF – Forward Current ( mA ) Figure 7. Forward Current vs. Forward Voltage CTR rel – Relative Current Transfer Ratio 2.0 Figure 10. Collector Current vs. Forward Current 100 IC – Collector Current ( mA ) VCE=5V IF=5mA 1.5 20mA IF=50mA 10 10mA 5mA 2mA 1mA 0.1 1.0 1 0.5 0 –25 95 11025 0 25 50 75 95 10985 0.1 1 10 100 Tamb – Ambient Temperature ( °C ) VCE – Collector Emitter Voltage ( V ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature Figure 11. Collector Current vs. Collector Emitter Voltage 258 Rev. A4, 11–Jan–99 TCET1600 up to TCET4600 Vishay Telefunken V CEsat – Collector Emitter Saturation Voltage ( V ) 1.0 20% 0.8 CTR=50% 0.6 50 Saturated Operation VS=5V RL=1kW t on / t off – Turn on / Turn off Time ( m s ) 40 30 toff 20 10 0 ton 0 5 10 15 20 0.4 0.2 0 1 10 IC – Collector Current ( mA ) 100 10% 95 11028 95 11031 IF – Forward Current ( mA ) Figure 12. Collector Emitter Saturation Voltage vs. Collector Current 1000 CTR – Current Transfer Ratio ( % ) VCE=5V 100 Figure 14. Turn on / off Time vs. Forward Current t on / t off – Turn on / Turn off Time ( m s ) 10 Non Saturated Operation VS=5V RL=100W 8 ton 6 toff 4 2 0 10 1 0.1 95 11029 1 10 100 95 11030 0 2 4 6 10 IF – Forward Current ( mA ) IC – Collector Current ( mA ) Figure 13. Current Transfer Ratio vs. Forward Current Pin 1 Indication Type Figure 15. Turn on / off Time vs. Collector Current ET1600 820UTK63 15082 Date Code (YM) Coupling System Indicator Company Logo Production Location Figure 16. Marking example Rev. A4, 11–Jan–99 259 TCET1600 up to TCET4600 Vishay Telefunken Dimensions of TCET1600 in mm weight: creepage distance: air path: y y ca. 0.25 g 6 mm 6 mm after mounting on PC board 14789 Dimensions of TCET1600G in mm weight: creepage distance: air path: y y ca. 0.25 g 8 mm 8 mm after mounting on PC board 14792 260 Rev. A4, 11–Jan–99 TCET1600 up to TCET4600 Vishay Telefunken Dimensions of TCET2600 in mm weight: creepage distance: air path: y y ca. 0.55 g 6 mm 6 mm after mounting on PC board 14784 Dimensions of TCET4600 in mm 14784 weight: creepage distance: air path: y y ca. 1.0 g 6 mm 6 mm after mounting on PC board 14783 Rev. A4, 11–Jan–99 261