TLCR5800_03

VISHAY TLC.58.. Vishay Semiconductors Ultrabright LED, ∅ 5 mm Untinted Non-Diffused \ 94 8631 Description The TLC.58.. series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity and a very small emission angle is required. These lamps with clear untinted plastic case utilize the highly developed ultrabright AlInGaP and GaP technologies. The very small viewing angle of these devices provide a very high luminous intensity. Features • Untinted non diffused lens • Utilizing ultrabright AllnGaP and InGaN technology • Very high luminous intensity • Very small emission angle • High operating temperature: Tj (chip junction temperature) up to 125 °C for AllnGaP devices • Luminous intensity and color categorized for each packing unit • ESD-withstand voltage: 2 kV acc. to MIL STD 883 D, Method 3015.7 for AllnGaP, 1 kV for InGaN Applications Interior and exterior lighting Outdoor LED panels, displays Instrumentation and front panel indicators Central high mounted stop lights (CHMSL) for motor vehicles Replaces incandescent lamps Traffic signals and signs Light guide design Parts Table Part TLCR5800 TLCY5800 TLCTG5800 TLCB5800 Color, Luminous Intensity Red, IV > 7500 mcd Yellow, IV > 5750 mcd True green, IV > 2400 mcd Blue, IV > 750 mcd AllGaP on GaAs AllGaP on GaAs InGaN on SiC InGaN on SiC Technology Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLCR5800 , TLCY5800 , TLCTG5800 , TLCB5800 Parameter Reverse voltage DC forward current Tamb ≤ 85°C Tamb ≤ 85°C Tamb ≤ 60°C Tamb ≤ 60°C TLCR5800 TLCR5800 TLCTG5800 TLCTG5800 Test condition Part Symbol VR IF IF IF IF Value 5 50 50 30 30 Unit V mA mA mA mA Document Number 83178 Rev. 2, 03-Apr-03 www.vishay.com 1 TLC.58.. Vishay Semiconductors Parameter Surge forward current Test condition tp ≤ 10 µs tp ≤ 10 µs tp ≤ 10 µs tp ≤ 10 µs Power dissipation Tamb ≤ 85°C Tamb ≤ 85°C Tamb ≤ 60°C Tamb ≤ 60°C Junction temperature Part TLCR5800 TLCR5800 TLCTG5800 TLCTG5800 TLCR5800 TLCR5800 TLCTG5800 TLCTG5800 TLCR5800 TLCR5800 TLCTG5800 TLCTG5800 Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t ≤ 5 s, 2 mm from body Symbol IFSM IFSM IFSM IFSM PV PV PV PV Tj Tj Tj Tj Tamb Tstg Tsd RthJA Value 1 1 0.1 0.1 135 135 135 135 125 125 100 100 - 40 to + 100 - 40 to + 100 260 300 VISHAY Unit A A A A mW mW mW mW °C °C °C °C °C °C °C K/W Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLCR5800 Parameter Luminous intensity Peak wavelength Spectral bandwidth at 50 % Irel max 1) Test condition IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IR = 10 µA IF = 50 mA IF = 50 mA Part TLCR5800 Symbol IV λd λp ∆λ ϕ VF VR TC VF TCλd Min 7500 611 Typ. 20000 616 622 18 ±4 2.1 Max 622 Unit nm nm nm deg Dominant wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of λd 1) 2.7 V V mV/K nm/K 5 - 3.5 0.05 in one Packing Unit IVMax./IVMin. ≤ 1.6 www.vishay.com 2 Document Number 83178 Rev. 2, 03-Apr-03 VISHAY Yellow TLCY5800 Parameter Luminous intensity Peak wavelength Spectral bandwidth at 50 % Irel max 1) TLC.58.. Vishay Semiconductors Test condition IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IR = 10 µA IF = 50 mA IF = 50 mA Part TLCY5800 Symbol IV λd λp ∆λ ϕ VF VR TC VF TCλd Min 5750 585 Typ. 14000 590 593 17 ±4 2.1 Max 597 Unit mcd nm nm nm deg Dominant wavelength Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of λd 1) 2.7 V V mV/K nm/K 5 - 3.5 0.1 in one Packing Unit IVMax./IVMin. ≤ 1.6 Pure green Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Test condition IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IR = 10 µA IF = 30 mA IF = 30 mA Part TLCTG5800 Symbol IV λd λp ∆λ ϕ VF VR TC VF TCλd Min 2400 515 Typ. 7000 525 520 37 ±4 3.9 Max 535 Unit mcd nm nm nm deg Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of λd 1) 4.5 V V mV/K nm/K 5 - 4.5 0.02 in one Packing Unit IVMax./IVMin. ≤ 1.6 Blue TLCB5800 Parameter Luminous intensity 1) Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Test condition IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IR = 10 µA IF = 30 mA IF = 30 mA Part TLCB5800 Symbol IV λd λp ∆λ ϕ VF VR TC VF TCλd Min 750 462 Typ. 2500 470 464 25 ±4 3.9 Max 476 Unit mcd nm nm nm deg Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of λd 1) 4.5 V V mV/K nm/K 5 - 5.0 0.02 in one Packing Unit IVMax./IVMin. ≤ 1.6 Document Number 83178 Rev. 2, 03-Apr-03 www.vishay.com 3 TLC.58.. Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 160 PV –Power Dissipation (mW) I F–Forward Current ( mA ) VISHAY 60 50 40 30 20 10 0 0 20 40 60 80 100 120 16710 140 120 100 80 60 40 20 0 Yellow Red Yellow Red 0 20 40 60 80 100 120 16708 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Ambient Temperature 160 PV –Power Dissipation (mW) I F–Forward Current ( mA ) 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 16711 140 120 100 80 60 40 20 0 Blue Truegreen Blue Truegreen 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 16709 Figure 2. Power Dissipation vs. Ambient Temperature Figure 5. Forward Current vs. Ambient Temperature 100 90 I F – Forward Current ( mA ) 100 90 I F – Forward Current ( mA ) 80 70 60 50 40 30 20 10 Red Yellow 80 70 60 50 40 30 20 10 0 2.5 Blue Truegreen 15974 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 V F – Forward Voltage ( V ) 3.0 16040 3.5 4.0 4.5 5.0 VF – Forward Voltage ( V ) 5.5 Figure 3. Forward Current vs. Forward Voltage Figure 6. Forward Current vs. Forward Voltage www.vishay.com 4 Document Number 83178 Rev. 2, 03-Apr-03 VISHAY TLC.58.. Vishay Semiconductors 10.00 I Vrel– Relative Luminous Intensity 10.00 IV rel - Relative Luminous Intensity Red 1.00 Yellow 1.00 0.10 0.10 0.01 1 15978 0.01 10 IF – Forward Current ( mA ) 100 15979 1 10 IF - Forward Current ( mA ) 100 Figure 7. Relative Luminous Flux vs. Forward Current Figure 10. Relative Luminous Flux vs. Forward Current 10.00 I Vrel– Relative Luminous Intensity 10.00 Blue I Vrel– Relative Luminous Intensity True Green 1.00 1.00 0.10 0.10 0.01 1 16042 10 IF – Forward Current ( mA ) 100 16039 0.01 1 10 IF – Forward Current ( mA ) 100 Figure 8. Relative Luminous Flux vs. Forward Current Figure 11. Relative Luminous Flux vs. Forward Current 16007 1.2 Red IF = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 570 580 590 600 610 620 630 640 650 660 670 l – Wavelength ( nm ) 16008 1.2 Yellow IF = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 l – Wavelength ( nm ) I Vrel– Relative Luminous Intensity I Vrel– Relative Luminous Intensity Figure 9. Relative Intensity vs. Wavelength Figure 12. Relative Intensity vs. Wavelength Document Number 83178 Rev. 2, 03-Apr-03 www.vishay.com 5 TLC.58.. Vishay Semiconductors VISHAY 1.2 True Green IF = 30 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 460 480 500 520 540 560 580 600 620 l – Wavelength ( nm ) 1.2 Blue IF = 30 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 420 440 460 480 500 520 540 560 l – Wavelength ( nm ) IVrel– Relative Luminous Intensity 16068 17539 Figure 13. Relative Intensity vs. Wavelength I rel – Relative Intensity Figure 14. Relative Intensity vs. Wavelength Package Dimensions in mm 9511476 www.vishay.com 6 Document Number 83178 Rev. 2, 03-Apr-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. TLC.58.. Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83178 Rev. 2, 03-Apr-03 www.vishay.com 7