0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
TLMB

TLMB

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    TLMB - MiniLED - Vishay Siliconix

  • 数据手册
  • 价格&库存
TLMB 数据手册
TLMB / G / O / P / S / Y2100 Vishay Semiconductors MiniLED Description The new MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MinLED is an obvious solution for small-scale, high-power products that are expected to work reliably in an arduous environment. This is often the case in automotive and industrial application of course. 19226 Features • SMD LEDs with exceptional brightness • Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package IR reflow soldering Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting • Low power consumption • Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 2.0, optional ≤ 1.6 • Lead-free device • • • • • • e3 Pb Pb-free Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use Parts Table Part TLMS2100 TLMO2100 TLMY2100 TLMG2100 TLMP2100 TLMB2100 Color, Luminous Intensity Red, IV = 7.5 mcd (typ.) Soft orange, IV = 7.5 mcd (typ.) Yellow, IV = 7.5 mcd (typ.) Green, IV = 10 mcd (typ.) Pure green, IV = 2.2 mcd (typ.) Blue, IV = 7 mcd (typ.) Angle of Half Intensity (±ϕ) 60 ° 60 ° 60 ° 60 ° 60 ° 60 ° Technology GaAsP on GaP GaAsP on GaP GaAsP on GaP GaP on GaP GaP on GaP GaN Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 1 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLMS2100 ,TLMO2100 ,TLMY2100 ,TLMG2100 ,TLMP2100 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient TLMB2100 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient according IPC 9501 mounted on PC board (pad size > 5 mm2) Tamb ≤ 60 °C tp ≤ 10 µs Tamb ≤ 60 °C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 20 0.1 90 100 - 40 to + 100 - 40 to + 100 245 480 Unit V mA A mW °C °C °C °C K/W according IPC 9501 mounted on PC board (pad size > 5 mm2) Tamb ≤ 60 °C tp ≤ 10 µs Tamb ≤ 60 °C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 6 30 0.5 95 100 - 40 to + 100 - 40 to + 100 245 480 Unit V mA A mW °C °C °C °C K/W Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMS2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 2.5 624 Typ. 7.5 628 640 ± 60 2.1 Max 636 Unit mcd nm nm deg Dominant wavelength 3.0 V V pF 6 15 15 in one Packing Unit IVmax/IVmin ≤ 2.0 www.vishay.com 2 Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Soft Orange TLMO2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA I R = 10 µ A VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 3.2 598 Typ. 7.5 605 605 ± 60 2.1 Max 611 Unit mcd nm nm deg Dominant wavelength 3 V V pF 6 15 15 in one Packing Unit IVmax/IVmin ≤ 2.0 Yellow TLMY2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA I R = 10 µ A VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 3.2 581 Typ. 7.5 588 585 ± 60 2.2 Max 594 Unit mcd nm nm deg Dominant wavelength 3 V V pF 6 15 15 in one Packing Unit IVmax/IVmin ≤ 2.0 Green TLMG2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA I R = 10 µ A VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 6.3 562 Typ. 10 568 565 ± 60 2.2 Max 575 Unit mcd nm nm deg Dominant wavelength 3.0 V V pF 6 15 15 in one Packing Unit IVmax/IVmin ≤ 2.0 Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 3 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Pure green TLMP2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance 2) 2) Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj Min 1.0 555 Typ. 2.2 560 555 ± 60 2.4 Max 565 Unit mcd nm nm deg Dominant wavelength 3 V V pF 6 15 15 in one Packing Unit IVmax/IVmin ≤ 2.0 Blue TLMB2100 Parameter Luminous intensity Peak wavelength Angle of half intensity Forward voltage Reverse voltage 1) 1) Test condition IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 µA Symbol IV λd λp ϕ VF VR Min 4.0 Typ. 7.0 465 428 ± 60 3.9 Max Unit mcd nm nm deg Dominant wavelength 4.5 V V 5.0 in one Packing Unit IVmax/IVmin ≤ 1.6 Typical Characteristics (Tamb = 25 °C unless otherwise specified) 120 PV - Power Dissipation (mW) I F - Forward Current ( mA ) 100 80 60 40 20 0 0 Red, Soft orange, Yellow, Green, Pure green Blue 40 35 30 25 Blue 20 15 10 5 0 Red, Soft orange, Yellow, Green, Pure green 20 40 60 80 100 18024 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( °C ) 18023 Tamb - Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 4 Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors 0° I V re l - Relative Luminous Intensity 10° 20° 30° 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 95 10319 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 5 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Package Dimensions in mm 16892 www.vishay.com 6 Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Reel Dimensions 16938 Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 7 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Tape Dimensions 16939 Leader and Trailer Trailer no devices devices Leader no devices End min. 200 min. 400 Start 96 11818 GS08 = 3000 pcs www.vishay.com 8 Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Cover Tape Peel Strength According to DIN EN 60286-3 0.1 to 1.3 N 300 ± 10 mm/min 165 ° - 180 ° peel angle Label Standard bar code labels for finished goods The standard bar code labels are product labels and used for identification of goods. The finished goods are packed in final packing area. The standard packing units are labeled with standard bar code labels before transported as finished goods to warehouses. The labels are on each packing unit and contain Vishay Semiconductor GmbH specific data. Vishay Semiconductor GmbH standard bar code product label (finished goods) Plain Writing Item-Description Item-Number Selection-Code LOT-/ Serial-Number Data-Code Plant-Code Quantity Accepted by: Packed by: Mixed Code Indicator Origin Long Bar Code Top Item-Number Plant-Code Sequence-Number Quantity Total Length Short Bar Code Bottom Selection–Code Data-Code Batch-Number Filter Total Length Abbreviation – INO SEL BATCH COD PTC QTY ACC PCK MIXED CODE xxxxxxx+ Type N N X N – Type X N X – – Length 18 8 3 10 3 (YWW) 2 8 – – – Company Logo Length 8 2 3 8 21 Length 3 3 10 1 17 16942 Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 9 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Dry Packing The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage. Aluminium bag Label Reel 17028 15973 Example of JESD22-A112 Level 2 label ESD Precaution Proper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the Antistatic Shielding Bag. Electro-Static Sensitive Devices warning labels are on the packaging. Final Packing The sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes. Recommended Method of Storage Dry box storage is recommended as soon as the aluminium bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 1 year under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 hours at 40 °C + 5 °C/ -0 °C and < 5 % RH (dry air/ nitrogen) or 96 hours at 60 °C +5 °C and < 5 % RH for all device containers or 24 hours at 100 °C +5 °C not suitable for reel or tubes. An EIA JEDEC Standard JESD22-A112 Level 2 label is included on all dry bags. Vishay Semiconductors Standard Bar-Code Labels The Vishay Semiconductors standard bar-code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data. www.vishay.com 10 Document Number 83199 Rev. 1.6, 20-Jan-05 TLMB / G / O / P / S / Y2100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83199 Rev. 1.6, 20-Jan-05 www.vishay.com 11

很抱歉,暂时无法提供与“TLMB”相匹配的价格&库存,您可以联系我们找货

免费人工找货