TLMEK3100

VISHAY TLMEK3100 Vishay Semiconductors Bicolor SMD LED Description These devices have been designed to meet the increasing demand for surface mounting technology. The package of the TLMEK3100 is the PLCC-3 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. This SMD device consists of a red and yellow chip. So it is possible to choose the color in one device. C A A 19140 e3 Pb Pb-free Features • • • • • • • • • • • • SMD LED with exceptional brightness Multicolored Luminous intensity categorized Compatible with automatic placement equipment EIA and ICE standard package Compatible with infrared, vapor phase and wave solder processes according to CECC Available in 8 mm tape Low profile package Non-diffused lens: excellent for coupling to light pipes and backlighting Low power consumption Luminous intensity ratio in one packaging unit IVmax/IVmin ≤ 2.0 Lead-free device Applications Automotive: Backlighting in dashboards and switches Telecommunication: Indicator and backlighting in telephone and fax Indicator and backlight for audio and video equipment Indicator and backlight in office equipment Flat backlight for LCDs, switches and symbols General use Parts Table Part TLMEK3100 Color, Luminous Intensity Red/Yellow Angle of Half Intensity (±ϕ) 60 ° Technology AlInGaP on GaAs Document Number 83166 Rev. 1.7, 31-Aug-04 www.vishay.com 1 TLMEK3100 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage per diode DC Forward current per diode Test condition IR = 10 µA Tamb ≤ 85 °C Symbol VR IF IFSM PV Tj Tamb Tstg t≤5s mounted on PC board (pad size > 16 mm2) Tsd RthJA Value 6 30 0.5 100 125 - 40 to + 100 - 55 to + 100 260 400 VISHAY Unit V mA A mW °C °C °C °C K/W Surge forward current per diode tp ≤ 10 µs Power dissipation per diode Tamb ≤ 85 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj 5 15 Min 40 630 643 ± 60 1.9 2.6 Typ. Max 125 Unit mcd nm nm deg V V pF Yellow Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Junction capacitance Test condition IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IR = 10 µA VR = 0, f = 1 MHz Symbol IV λd λp ϕ VF VR Cj 5 15 Min 40 581 588 590 ± 60 2.0 2.6 Typ. Max 200 594 Unit mcd nm nm deg V V pF www.vishay.com 2 Document Number 83166 Rev. 1.7, 31-Aug-04 VISHAY Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0° I V re l - Relative Luminous Intensity TLMEK3100 Vishay Semiconductors 10° 20° 30° 100 PV –Power Dissipation (mW) 80 60 40 20 0 0 20 40 60 80 100 1.0 0.9 0.8 0.7 0.6 40° 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 16614 Tamb – Ambient Temperature ( C ) 95 10319 Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Rel. Luminous Intensity vs. Angular Displacement 40 35 30 25 20 15 10 5 0 0 16615 100 I F - Forward Current ( mA ) I F–Forward Current ( mA ) 10 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 95 10878 1 1.0 1.5 2.0 2.5 3.0 V F - Forward Voltage ( V ) Figure 2. Forward Current vs. Ambient Temperature for InGaN Figure 5. Forward Current vs. Forward Voltage 10000 I F - Forward Current ( mA ) I V rel - Relative Luminous Intensity t p /T = 0.005 1000 0.01 Tamb < 60 °C 0.02 0.05 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 95 10880 IF = 20 mA 100 0.2 0.5 DC 0.1 10 1 0.01 95 9985 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( °C ) t p - Pulse Length ( ms ) Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Rel. Luminous Intensity vs. Ambient Temperature Document Number 83166 Rev. 1.7, 31-Aug-04 www.vishay.com 3 TLMEK3100 Vishay Semiconductors VISHAY IV rel - Relative Luminous Intensity 2.0 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1 1 2 0.5 5 0.2 10 20 50 0.02 I F (mA) t p /T I V rel - Relative Luminous Intensity 1.8 1.2 I F = 20 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 550 560 570 580 590 600 610 620 630 640 650 λ - Wavelength ( nm ) 96 11589 0.1 0.05 95 10881 Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle Figure 10. Relative Intensity vs. Wavelength I Vrel - Relative Luminous Intensity 10 1.0 0.1 0.01 1 96 11588 10 I F - Forward Current ( mA ) 100 Figure 8. Relative Luminous Intensity vs. Forward Current 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 610 620 630 640 650 660 670 680 690 700 λ - Wavelength ( nm ) 96 12075 I rel - Relative Intensity Figure 9. Relative Intensity vs. Wavelength www.vishay.com 4 Document Number 83166 Rev. 1.7, 31-Aug-04 VISHAY Package Dimensions in mm 3.5 ± 0.2 TLMEK3100 Vishay Semiconductors + 0.10 1.65- 0.05 0.85 technical drawings according to DIN specifications Mounting Pad Layout 2.6 (2.8) Pin identification 1.2 area covered with solder resist 2.8 + 0.15 0.4 0.9 ∅ 2.4 3 + 0.15 4 1.6 (1.9) Dimensions: IR and Vaporphase (Wave Soldering) Drawing-No. : 6.541-5054.01-4 Issue: 1; 19.02.04 16276 Document Number 83166 Rev. 1.7, 31-Aug-04 4 0.5 www.vishay.com 5 TLMEK3100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83166 Rev. 1.7, 31-Aug-04