TLM.32.
Vishay Semiconductors
Power SMD LED PLCC-4
FEATURES • Available in 8 mm tape • Luminous intensity and color categorized per packing unit e3 • Luminous intensity ratio per packing unit IVmax/IVmin ≤ 1.6 • ESD-withstand voltage: up to 2 kV according to JESD22-A114-B • Suitable for all soldering methods according to CECC 00802 and J-STD-020C • Preconditioning: acc. to JEDEC level 2a • Lead (Pb)-free device • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Interior and exterior lighting • Indicator and backlighting purposes for audio, video, LCDs, switches, symbols, illuminated advertising etc. • Illumination purpose, alternative to incandescent lamps • General use
19210
DESCRIPTION The TLM.32. is an advanced development in terms of heat dissipation. The leadframe profile of this PLCC-4 SMD package is optimized to reduce the thermal resistance. This allows higher drive current and doubles the light output compared to Vishay’s high intensity SMD LED in PLCC-2 package. PRODUCT GROUP AND PACKAGE DATA • Product group: LED • Package: SMD PLCC-4 • Product series: power • Angle of half intensity: ± 60° PARTS TABLE
PART TLMK32T2V1-GS18 TLMK32U2AA-GS18 TLMK32T2AA-GS18 TLMS32S2U1-GS18 TLMS32T1U2-GS18 TLMS32S2V1-GS18 TLMO32U2AA-GS18 TLMO32T2V1-GS18 TLMO32U1AA-GS18 TLMY32T2V1-GS18 TLMY32U2AA-GS18 TLMY32T2AA-GS18
COLOR, LUMINOUS INTENSITY Red, IV = (355 to 900) mcd Red, IV = (560 to 1400) mcd Red, IV = (355 to 1400) mcd Super red, IV = (224 to 560) mcd Super red, IV = (280 to 710) mcd Super red, IV = (224 to 900) mcd Soft orange, IV = (560 to 1400) mcd Soft orange, IV = (355 to 900) mcd Soft orange, IV = (450 to 1400) mcd Yellow, IV = (355 to 900) mcd Yellow, IV = (560 to 1400) mcd Yellow, IV = (355 to 1400) mcd
TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs
Document Number 81284 Rev. 1.0, 22-Feb-08
www.vishay.com 1
TLM.32.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS 1) TLMK32., TLMS32., TLMO32., TLMY32.
PARAMETER Reverse voltage 2) Forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Thermal resistance junction/ambient mounted on PC board FR4 optional paddesign mounted on PC board FR4 recommended paddesign TEST CONDITION SYMBOL VR IF Ptot Tj Tamb Tstg RthJA RthJA VALUE 5 70 180 125 - 40 to + 100 - 40 to + 100 290 270 UNIT V mA mW °C °C °C K/W K/W
Note: 1) Tamb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMK32., RED
PARAMETER Luminous intensity Luminous flux Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current
3) 2)
TEST CONDITION IF = 50 mA
PART TLMK32T2V1 TLMK32U2AA TLMK32T2AA
SYMBOL IV IV IV φV/IV λd λp Δλ ϕ VF IR
MIN. 355 560 355
TYP.
MAX. 900 1400 1400
UNIT mcd mcd mcd mlm/mcd nm nm nm deg
3 612 617 624 18 ± 60 1.85 2.1 0.01 2.55 10 624
IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V
TLMK32..
V µA
Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit I Vmax/IVmin ≤ 1.6 3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMS32., SUPER RED
PARAMETER Luminous intensity Luminous flux Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current
3) 2)
TEST CONDITION IF = 50 mA
PART TLMS32S2U1 TLMS32T1U2 TLMS32S2V1
SYMBOL IV IV IV φV/IV λd λp Δλ ϕ VF IR
MIN. 224 280 224
TYP.
MAX. 560 710 900
UNIT mcd mcd mcd mlm/mcd nm nm nm deg
3 626 630 641 17 ± 60 1.85 2.1 0.01 2.55 10 638
IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V
V µA
Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V www.vishay.com 2 Document Number 81284 Rev. 1.0, 22-Feb-08
TLM.32.
Vishay Semiconductors
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMO32., SOFT ORANGE
PARAMETER Luminous intensity Luminous flux Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current
3) 2)
TEST CONDITION IF = 50 mA
PART TLMO32T2V1 TLMO32U2AA TLMO32U1AA
SYMBOL IV IV IV φV/IV λd λp Δλ ϕ VF IR
MIN. 355 560 450
TYP.
MAX. 900 1400 1400
UNIT mcd mcd mcd mlm/mcd nm nm nm deg
3 600 605 611 17 ± 60 1.85 2.1 0.01 2.55 10 609
IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V
V µA
Note: 1) T amb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V
OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMY3214, YELLOW
PARAMETER Luminous intensity Luminous flux Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current
3) 2)
TEST CONDITION IF = 50 mA
PART TLMY32T2V1 TLMY32U2AA TLMY32T2AA
SYMBOL IV IV IV φV/IV λd λp Δλ ϕ VF IR
MIN. 355 560 355
TYP.
MAX. 900 1400 1400
UNIT mcd mcd mcd mlm/mcd nm nm nm deg
3 580 588 590 18 ± 60 1.85 2.1 0.01 2.55 10 595
IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA VR = 5 V
V µA
Note: 1) Tamb = 25 °C, unless otherwise specified 2) In one packing unit IVmax/IVmin ≤ 1.6 3) Forward voltage is tested at a current pulse duration of 1 ms and a tolerance of ± 0.05 V
LUMINOUS INTENSITY CLASSIFICATION
GROUP STANDARD S T U V A 1 2 1 2 1 2 1 2 A LIGHT INTENSITY (MCD) OPTIONAL MIN. 180 224 280 355 450 560 710 900 1120 MAX. 224 280 355 450 560 710 900 1120 1400
Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of ± 11 %. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will not be orderable.
Document Number 81284 Rev. 1.0, 22-Feb-08
www.vishay.com 3
TLM.32.
Vishay Semiconductors
COLOR CLASSIFICATION
YELLOW GROUP MIN. 1 2 3 4 5 6 581 583 585 587 589 591 MAX. 584 586 588 590 592 594 600 602 604 606 608 603 605 607 609 611 SOFT ORANGE MIN. MAX. DOM. WAVELENGTH (NM)
CROSSING TABLE
VISHAY TLMK32T2V1 TLMK32U2AA TLMK32T2AA TLMS32S2U1 TLMS32T1U2 TLMS32S2V1 TLMO32U2AA TLMY32T2V1 TLMY32U2AA TLMY32T2AA OSRAM LAE67BT2V1 LAE67BU2AA LAE67BT2AA LSE67AS2U1 LSE67AT1U2 LSE67AS2V1 LOE67BU2AA LYE67BT2V1 LYE67BU2AA LYE67BT2AA
Note: Wavelengths are tested at a current pulse duration of 25 ms and an accuracy of ± 1 nm.
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
100 90
100 90 80 70 60 50 40 30 20 10 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5
17046
IF - Forward Current (mA)
70 60 50 40 30 20 10 0 0 25 50 75 100 Tamb - Ambient Temperature (°C) 125 270 K/W RthJA = 290 K/W
I F - Forward Current (mA)
80
yellow soft orange red super red
18568
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Ambient Temperature
Figure 3. Forward Current vs. Forward Voltage
0°
10°
20° 30°
1.2
IV rel - Relative Luminous Intensity
IV rel - Relative Luminous Intensity
red
1.0 0.8 0.6 0.4 0.2 0.0
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6
95 10319
570
16007
590
610
630
650
670
λ - Wavelength (nm)
Figure 2. Rel. Luminous Intensity vs. Angular Displacement
Figure 4. Relative Intensity vs. Wavelength
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Document Number 81284 Rev. 1.0, 22-Feb-08
TLM.32.
Vishay Semiconductors
VF - Change of Forward Voltage (mV)
250
IV rel - Relative Luminous Intensity
10 red
200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 100 10 mA 30 mA 50 mA red
1
0.1
0.01 1
17037
17034
Tamb - Ambient Temperature (°C)
10 IF - Forward Current (mA)
100
Figure 5. Change of Forward Voltage vs. Ambient Temperature
Figure 8. Relative Luminous Intensity vs. Forward Current
2.5 IV rel - Relative Luminous Intensity red 2.0 1.5 1.0 0.5 0.0 - 50
17035
- Change of Dom. Wavelength (nm)
1.5 red 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5
- 25
0
25
50
75
100
17038
d
Tamb - Ambient Temperature (°C)
10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA)
Figure 6. Relative Luminous Intensity vs. Ambient Temperature
Figure 9. Change of Dominant Wavelength vs. Forward Current
- Change of Dom. Wavelength (nm)
6 red 4 2 0 -2 -4 -6 - 50
IV rel - Relative Luminous Intensity
- 25
0
25
50
75
100
1.2 1.1 super red 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 600 620
d
640
660
680
700
17036
Tamb - Ambient Temperature (°C)
17045
λ - Wavelength (nm)
Figure 7. Change of Dominant Wavelength vs. Ambient Temperature
Figure 10. Relative Intensity vs. Wavelength
Document Number 81284 Rev. 1.0, 22-Feb-08
www.vishay.com 5
TLM.32.
Vishay Semiconductors
VF - Change of Forward Voltage (mV)
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 100
17042
10
super red 30 mA
IV rel - Relative Luminous Intensity
super red
1
50 mA 10 mA
0
0.01 1 10 IF - Forward Current (mA) 100 Tamb - Ambient Temperature (°C)
17039
Figure 11. Change of Forward Voltage vs. Ambient Temperature
Figure 14. Relative Luminous Intensity vs. Forward Current
Δ λ d - Change of Dom. W avelength (nm)
2.5 I Vrel - Relative Luminous Intensity
super red
1.5
super red
2.0 1.5 1.0 0.5 0.0 - 50
1.0 0.5 0.0 - 0.5 - 1.0 - 1.5 10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA)
17040
- 25 0 25 50 75 Tamb - Ambient Temperature (°C)
100
17043
Figure 12. Relative Luminous Intensity vs. Ambient Temperature
Figure 15. Change of Dominant Wavelength vs. Forward Current
Δ λ d - Change of Dom. Wavelength (nm)
3 2 1 0 -1 -2 -3 -4 -5 - 50 - 25 0 25 50 75 100
16314
1 .2
super red
IV rel - Relative Luminous Itensity
soft orange 1.0 0.8 0.6 0.4 0.2 0.0 560
580
600
620
640
660
17041
Tamb - Ambient Temperature (°C)
λ - Wavelength (nm)
Figure 13. Change of Dominant Wavelength vs. Ambient Temperature
Figure 16. Relative Intensity vs. Wavelength
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Document Number 81284 Rev. 1.0, 22-Feb-08
TLM.32.
Vishay Semiconductors
VF - Change of Forward Voltage (mV)
250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100
17023
10
30 mA
IV rel - Relative Luminous Intensity
50 mA
soft orange
1
soft orange 10 mA
0.1
0.01 1 10 IF - Forward Current (mA) 100
17020
Figure 17. Change of Forward Voltage vs. Ambient Temperature
Figure 20. Relative Luminous Intensity vs. Forward Current
2.5 IV rel - Relative Luminous Intensity soft orange 2.0 1.5 1.0 0.5 0.0 - 50
17021
- Change of Dom. Wavelength (nm)
1.5 soft orange 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5
- 25
0 25 50 75 100 Tamb - Ambient Temperature (°C)
d
10 20 30 40 50 60 70 80 90 100
17024
IF - Forward Current (mA)
Figure 18. Relative Luminous Intensity vs. Ambient Temperature
Figure 21. Change of Dominant Wavelength vs. Forward Current
- Change of Dom. Wavelength (nm)
6 IV rel - Relative Luminous Intensity soft orange 4 2 0 -2 -4 -6 - 50
1.2 yellow 1.0 0.8 0.6 0.4 0.2 0.0 540
16008
d
- 25
0
25
50
75
100
560
580
600
620
640
17022
Tamb - Ambient Temperature (°C)
λ - Wavelength (nm)
Figure 19. Change of Dominant Wavelength vs. Ambient Temperature
Figure 22. Relative Intensity vs. Wavelength
Document Number 81284 Rev. 1.0, 22-Feb-08
www.vishay.com 7
TLM.32.
Vishay Semiconductors
Δ VF - Change of Forward Voltage (mV)
250 IV rel - Relative Luminous Intensity 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 Tamb - Ambient Temperature (°C) 100
17018
10 30 mA 50 mA yellow yellow
1
10 mA
0.1
0.01 1 10 IF - Forward Current (mA) 100
17015
Figure 23. Change of Forward Voltage vs. Ambient Temperature
Figure 26. Relative Luminous Intensity vs. Forward Current
2.5 IV rel - Relative Luminous Intensity yellow 2.0 1.5 1.0 0.5 0.0 - 50
17016
- Change of Dom. Wavelength (nm)
1.5 yellow 1.0 0.5 0.0 - 0.5 - 1.0 - 1.5
- 25
0 25 50 75 Tamb - Ambient Temperature (°C)
100
17019
d
10 20 30 40 50 60 70 80 90 100 IF - Forward Current (mA)
Figure 24. Relative Luminous Intensity vs. Ambient Temperature
Figure 27. Change of Dominant Wavelength vs. Forward Current
Δλd - Change of Dom. Wavelength (nm)
6 yellow 4 2 0 -2 -4 -6 - 50
IF - Forward Current (A)
0.12 0.10 0.08 0.06 0.04 0.02 0.00 10 -5
17044
tP/T = 0.005 0.05 0.5
17017
- 25 0 25 50 75 Tamb - Ambient Temperature (°C)
100
10 -4
10 -3
10 -2
10 -1
10 0
101
10 2
tP - Pulse Length (s)
Figure 25. Change of Dominant Wavelength vs. Ambient Temperature
Figure 28. Forward Current vs. Pulse Length
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Document Number 81284 Rev. 1.0, 22-Feb-08
TLM.32.
Vishay Semiconductors
TAPING DIMENSIONS in millimeters
Anode Cathode
3.5 3.1 2.2 2.0
5.75 5.25 3.6 3.4 8.3 7.7
4.0 3.6
Cathode
1.85 1.65 1.6 1.4 4.1 3.9 2.05 1.95
18596
4.1 3.9
0.25
REEL DIMENSIONS in millimeters
10.4 8.4
120°
4.5 3.5 2.5 1.5
13.00 12.75 62.5 60.0
Identification Label: Vishay Type Group Tape Code Production Code Quantity
321 329
14.4 max.
18857
Document Number 81284 Rev. 1.0, 22-Feb-08
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TLM.32.
Vishay Semiconductors
RECOMMENDED PAD DESIGN Dimensions in millimeters (Wave-Soldering), RthJA = 270 K/W
16260
RECOMMENDED PAD DESIGN Dimensions in millimeters (Reflow-Soldering), RthJA = 270 K/W
16261
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Document Number 81284 Rev. 1.0, 22-Feb-08
TLM.32.
Vishay Semiconductors
OPTIONAL PAD DESIGN Dimensions in millimeters (Wave-Soldering), RthJA = 290 K/W
16262
OPTIONAL PAD DESIGN Dimensions in millimeters (Reflow-Soldering), RthJA = 290 K/W
16263
Document Number 81284 Rev. 1.0, 22-Feb-08
www.vishay.com 11
TLM.32.
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
Drawing-No. : 6.541-5054.01-4 Issue: 2; 02.12.05
16276_2
SOLDERING PROFILE
IR Reflow Soldering Profile for Lead (Pb)-free Soldering
Preconditioning acc. to JEDEC Level 2a
TTW Soldering 300 5s 235 °C to 260 °C first wave ca. 200 K/s 100 °C to 130 °C 100 50 0
(acc. to CECC00802)
948626-1
300 250 Temperature (°C) 200 max. 30 s 150 max. 120 s 100 50 0 0
19885
Temperature (°C)
255 °C 240 °C 217 °C
max. 260 °C 245 °C
lead temperature second wave ca. 2 K/s full line: typical dotted line: process limits
250 200 150
max. 100 s
2 K/s forced cooling
ca. 5 K/s
max. ramp up 3 °C/s
max. ramp down 6 °C/s
50
100
150 Time (s)
200
250
300
0
50
100 Time (s)
150
200
250
max. 2 cycles allowed
Figure 29. Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020B)
Figure 30. Double Wave Soldering of Opto Devices (all Packages)
www.vishay.com 12
Document Number 81284 Rev. 1.0, 22-Feb-08
TLM.32.
Vishay Semiconductors
LABEL OF FAN FOLD BOX EXAMPLE: RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available: • Storage temperature 10 °C to 30 °C • Storage humidity ≤ 60 % RH max. After more than 672 h under these conditions moisture content will be too high for reflow soldering. In case of moisture absorption, the devices will recover to the former condition by drying under the following condition: 192 h at 40 °C + 5 °C/- 0 °C and < 5 % RH (dry air/nitrogen) or 96 h at 60 °C + 5 °C and < 5 % RH for all device containers or 24 h at 100 °C + 5 °C not suitable for reel or tubes. An EIA JEDEC standard JESD22-A112 level 2a label is included on all dry bags.
LEVEL This bag contains MOISTURE –SENSITIVE DEVICES
106 E F
37
TLMK3200-GS18 8000 U2
B
A C
G
D
21063
A) Type of component B) PTC = manufacturing plant C) SEL - selection code (bin): e.g.: U2 = code for luminous intensity group D) Batch/date code E) Total quantity F) Company code G) Code for lead (Pb)-free classification (e3) DRY PACKING The reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.
CAUTION
2a
1. Shelf life in sealed bag 12 months at