TLVB4200

VISHAY TLVB4200 Vishay Semiconductors Backlighting Blue LED, ∅ 3 mm Tinted Non-Diffused Package Description The TLVB4200 series was developed for backlighting. Due to its special shape the spatial distribution of the radiation is qualified for backlighting. To optimize the brightness of backlighting a custombuilt reflector (with scattering) is required. Uniform illumination can be enhanced by covering the front of the reflector with diffusor material. This is a flexible solution for backlighting different areas. 19231 e3 Pb Pb-free Features • • • • • • • • • • High light output Wide viewing angle (Backlighting) Categorized for luminous flux Tinted clear package Low power dissipation Low self heating Rugged design High reliability ESD class 1 Lead-free device Applications Backlighting of display panels, LCD displays, symbols on switches, keyboards, graphic boards and measuring scales Illumination of large areas e.g. dot matrix displays Parts Table Part TLVB4200 Color, Luminous Intensity Blue, φV > 25 mlm Angle of Half Intensity (±ϕ) 85 ° Technology GaN on SiC Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified TLVB4200 Parameter Reverse voltage DC Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Tamb ≤ 60 °C tp ≤ 10 µs Tamb ≤ 60 °C Test condition Symbol VR IF IFSM PV Tj Tamb Value 5 20 0.1 100 100 - 40 to + 100 Unit V mA A mW °C °C Document Number 83135 Rev. 1.4, 31-Aug-04 www.vishay.com 1 TLVB4200 Vishay Semiconductors Parameter Storage temperature range Soldering temperature Thermal resistance junction/ ambient t ≤ 5 s, 2 mm from body Test condition Symbol Tstg Tsd RthJA Value - 40 to + 100 260 400 VISHAY Unit °C °C K/W Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Blue TLVB4200 Parameter Luminous intensity Dominant wavelength Peak wavelength Angle of half intensity Forward voltage Reverse voltage Test condition IF = 15 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 20 mA IR = 10 µA Symbol IV λd λp ϕ VF VR 5 Min 25 Typ. 38 466 428 ± 85 3.9 4.5 Max Unit mlm nm nm deg V V Typical Characteristics (Tamb = 25 °C unless otherwise specified) 125 P - Power Dissipation ( mW ) V IF - Forward Current ( mA ) 60 50 40 30 20 10 0 15884 100 75 50 25 0 0 20 40 60 80 100 0 20 40 60 80 100 95 10904 Tamb - Ambient Temperature ( °C ) Tamb - Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature for InGaN www.vishay.com 2 Document Number 83135 Rev. 1.4, 31-Aug-04 VISHAY TLVB4200 Vishay Semiconductors I Vrel - Relative Luminous Intensity 100 I F - Forward Current ( mA ) 10 1 10 0.1 1 0 15846 1 2 3 4 5 6 7 8 0.01 15848 1 10 I F - Forward Current ( mA ) 100 V F - Forward Voltage ( V ) Figure 3. Forward Current vs. Forward Voltage Figure 5. Relative Luminous Flux vs. Forward Current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -10 I F = 10 mA I Vrel - Relative Luminous Intensity (%) I Vrel - Relative Luminous Intensity 1.6 120 I F = 10 mA 100 80 60 40 20 0 350 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( °C ) 15849 400 450 500 550 600 15847 λ - Wavelenght ( nm ) Figure 4. Rel. Luminous Flux vs. Ambient Temperature Figure 6. Relative Intensity vs. Wavelength 0° I v rel - Relative Luminous Intensity 10 ° 20 ° 30 ° 40 ° 50 ° 60 ° 70 ° 80 ° 1.0 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 96 11608 Figure 7. Rel. Luminous Intensity vs. Angular Displacement for 90 ° Emission Angle Document Number 83135 Rev. 1.4, 31-Aug-04 www.vishay.com 3 TLVB4200 Vishay Semiconductors Package Dimensions in mm VISHAY 9510954 www.vishay.com 4 Document Number 83135 Rev. 1.4, 31-Aug-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. TLVB4200 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83135 Rev. 1.4, 31-Aug-04 www.vishay.com 5