TN0200T

TN0200T/TS Vishay Siliconix N-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY ID (A) VDS (V) 20 rDS(on) (W) 0.4 @ VGS = 4.5 V 0.5 @ VGS = 2.5 V TN0200T 0.73 0.65 TN0200TS 1.2 1.1 FEATURES D D D D D Low On-Resistance: 0.29 W Low Threshold: 0.9 V (typ) 2.5-V or Lower Operation Fast Switching Speed: 22 ns Low Input and Output Leakage BENEFITS D D D D D Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Low Battery Voltage Operation APPLICATIONS D D D D D Direct Logic-Level Interfact: TTL/CMOS Dirvers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems, DC/DC Converters Solid-State Relays Load/Power Switching−Cell Phones, Pagers TO-236 (SOT-23) Top View G 1 3 S 2 D Marking Code: TN0200T: NOwll TN0200TS: NSwll w = Week Code ll = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg TN0200T 20 "8 0.73 0.58 4 0.6 0.35 0.22 TN0200TSc 20 "8 1.2 1.0 4 1.0 1.0 0.65 Unit V A W _C −55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Document Number: 70202 S-40277—Rev. F, 23-Feb-04 www.vishay.com Symbol RthJA TN0200T 357 TN0200TSc 125 Unit _C/W 1 TN0200T/TS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 50 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V TJ = 85_C VDS w 5 V, VGS = 4.5 V VDS w 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 0.6 A VGS = 2.5 V, ID = 0.6 A VDS = 5 V, ID = 0.6 A IS = 0.6 A, VGS = 0 V 2.5 1.5 0.29 0.34 2.2 0.8 1.2 0.4 0.5 20 0.5 36 0.9 1.5 "100 0.1 2 V nA mA Symbol Test Conditions Min Typ Max Unit On-State On State Drain Currenta ID( ) D(on) A Drain-Source On-Resistance Drain Source On Resistancea Forward Transconductancea Diode Forward Voltagea rDS( ) DS(on) gfs VSD W S V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 4.5 V, ID = 0.6 A 1900 50 750 90 45 12 pF 2800 pC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW v300 ms duty cycle v2%. td(on) tr td(off) tf VDD = 10 V, RL = 16 W V, ID ^ 0.6 A, VGEN = 4.5 V, RG = 6 W 8 14 21 7 13 21 30 11 VNLJ02 ns www.vishay.com 2 Document Number: 70202 S-40277—Rev. F, 23-Feb-04 TN0200T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 6 5 3 ID − Drain Current (A) 2.5 V ID − Drain Current (A) 4 3 2V 2 1 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) 0, 0.5, 1 V 25_C 125_C Output Characteristics VGS = 5, 4.5, 4 V 3.5 V 3V 4 Transfer Characteristics TC = −55_C 2 1 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS − Gate-to-Source Voltage (V) 1.0 rDS(on) − Drain-Source On-Resistance ( Ω ) On-Resistance vs. Drain Current 250 Capacitance 0.8 C − Capacitance (pF) 200 0.6 VGS = 2.5 V 0.4 VGS = 4.5 V 150 Ciss Coss 50 Crss 100 0.2 0.0 0 1 2 3 4 5 6 7 ID − Drain Current (A) 0 0 4 8 12 16 20 VDS − Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 0.6 A VGS − Gate-to-Source Voltage (V) 4 Gate Charge 1.7 On-Resistance vs. Junction Temperature 1.5 rDS(on) − On-Resistance ( Ω ) (Normalized) VGS = 4.5 V ID = 0.6 A 3 1.3 2 1.1 1 0.9 0 0 300 600 900 1200 1500 1800 2100 0.7 −50 0 50 100 150 Qg − Total Gate Charge (pC) Document Number: 70202 S-40277—Rev. F, 23-Feb-04 TJ − Junction Temperature (_C) www.vishay.com 3 TN0200T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 10 Source-Drain Diode Forward Voltage 0.8 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C IS − Source Current (A) 1 TJ = 25_C rDS(on) − On-Resistance ( Ω ) 0.6 0.4 0.1 0.2 ID = 0.6 A 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0 1 2 3 4 5 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) 0.2 0.1 −0.0 −0.1 −0.2 −0.3 −0.4 −50 Threshold Voltage 10 Single Pulse Power 8 ID = 50 mA Power (W) VGS(th) − Variance (V) 6 4 TC = 25_C Single Pulse 2 0 0 50 100 150 0.001 0.01 0.1 Time (sec) 1.0 10.0 TJ − Junction Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70202 S-40277—Rev. F, 23-Feb-04