TN0201KL

TN0201K/TN0201KL New Product Vishay Siliconix N-Channel 20−V (D−S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) 20 FEATURES ID (A) VGS(th) (V) 1.0 1 0 to 3 0 3.0 D TrenchFETr Power MOSFET rDS( ) DS(on) Max (W) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K 0.42 0.35 TN0201KL 0.64 0.53 APPLICATIONS D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays TO-236 (SOT-23) S 3 S 2 D G TO-226AA (TO-92) 1 Device Marking Front View “S” TN 0201KL xxyy “S” = Siliconix Logo xxyy = Date Code G 1 2 Top View TN0201K Marking Code: K3ywl K3 = Part Number Code for TN0201K y = Year Code w = Week Code l = Lot Traceability Ordering Information: TN0201K-T1—E3 (Lead Free) D 3 Top View TN0201KL Ordering Information: TN0201KL-TR1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Limit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 72671 S-40245—Rev. A, 16-Feb-04 www.vishay.com TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg TN0201K 20 "20 0.42 0.33 0.8 0.35 0.22 357 TN0201KL Unit V 0.64 0.51 1.5 0.8 0.51 156 −55 to 150 W _C/W _C A 1 TN0201K/TN0201KL Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 0.25 mA VDS = 0 V, VGS = "20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = 10 V VGS = 10 V V, TN0201K TN0201KL 0.5 0.8 0.8 0.47 550 0.85 1.2 1.4 1.0 20 1.0 2.0 3.0 "100 1 10 V nA mA Symbol Test Conditions Min Typ Max Unit On-State On State Drain Currenta ID( ) D(on) A Drain-Source On-Resistancea Source Forward Transconductancea Diode Forward Voltage rDS(on) gfs VSD VGS = 4.5 V, ID = 0.1 A VGS = 10 V, ID = 0.3 A VDS = 10 V, ID = 0.3 A IS = 0.3 A, VGS = 0 V W mS V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Turn On Time Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 50 W ID ^ 0.3 A, VGEN = 10 V 3 RG = 6 W VDS = 16 V, VGS = 10 V .3 ID ^ 0.3 A 1000 205 200 48 4.5 8 9 6.3 8 15 15 12 ns W 1500 pC TurnTurn-Off Time Time Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 0.8 0.7 0.6 I D − Drain Current (A) 0.5 0.4 0.3 0.2 3V 0.1 0.0 0.0 2V 0.4 0.8 1.2 1.6 2.0 0.0 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72671 S-40245—Rev. A, 16-Feb-04 I D − Drain Current (A) VGS = 10 thru 5 V 4V 0.8 1.0 Transfer Characteristics 0.6 0.4 TJ = 125_C 0.2 25_C −55_C VDS − Drain-to-Source Voltage (V) www.vishay.com 2 TN0201K/TN0201KL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 1.5 r DS(on) − On-Resistance ( W ) 50 Vishay Siliconix Capacitance C − Capacitance (pF) 1.2 VGS = 4.5 V 0.9 40 Ciss 30 Coss 20 Crss 0.6 VGS = 10 V 0.3 10 0.0 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 4 8 12 16 20 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 16 V ID = 0.3 A 8 1.6 On-Resistance vs. Junction Temperature r DS(on) − On-Resistance ( W) (Normalized) 1.4 VGS = 10 V ID = 0.3 A 6 1.2 VGS = 4.5 V ID = 0.1 A 4 1.0 2 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 0.6 −50 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Source-Drain Diode Forward Voltage 3 1 I S − Source Current (A) TJ = 150_C 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.1 ID = 0.3 A 0.01 TJ = 25_C 0.001 0.0 4 8 12 16 20 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Document Number: 72671 S-40245—Rev. A, 16-Feb-04 www.vishay.com 3 TN0201K/TN0201KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA −0.0 −0.2 −0.4 −0.6 −50 −25 0 25 50 75 100 125 150 TJ − Temperature (_C) Safe Operating Area (TO-236, TN0201K Only) 10 IDM Limited rDS(on) Limited 1 I D − Drain Current (A) I D − Drain Current (A) 1 ms 10 ms 0.1 ID(on) Limited TA = 25_C Single Pulse 100 ms 1s 10 s dc Safe Operating Area (TO-226AA, TN0201KL Only) 10 rDS(on) Limited 1 1 ms 10 ms 100 ms 10 s 1s dc IDM Limited 0.1 ID(on) Limited 0.01 0.01 TA = 25_C Single Pulse 0.001 0.1 1 BVDSS Limited 10 100 0.001 0.1 1 BVDSS Limited 10 100 VDS − Drain-to-Source Voltage (V) VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-236, TN0201K Only) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 4 Document Number: 72671 S-40245—Rev. A, 16-Feb-04 TN0201K/TN0201KL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient (TO-226AA, TN0201KL Only) 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72671 S-40245—Rev. A, 16-Feb-04 www.vishay.com 5