TN2460L

TN2460L/TN2460T Vishay Siliconix N-Channel 240-V (D-S) MOSFET PRODUCT SUMMARY Part Number TN2460L 240 TN2460T V(BR)DSS Min (V) rDS(on) Max (W) 60 @ VGS = 10 V 60 @ VGS = 10 V VGS(th) (V) 0.5 to 1.8 0.5 to 1.8 ID Min (mA) 75 51 FEATURES D D D D D Low On-Resistance: 40 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability BENEFITS D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” APPLICATIONS D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control TO-226AA (TO-92) S 1 TO-236 (SOT-23) Device Marking Front View “S” TN 2406L xxyy “S” = Siliconix Logo xxyy = Date Code G 1 3 S 2 D Marking Code: T2wll T2 = Part Number Code for TN2460T w = Week Code ll = Lot Traceability G 2 D 3 Top View TN2460L Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70205 S-04279—Rev. D , 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg TN2460L 240 "20 75 48 800 0.8 0.32 156 –55 to 150 TN2460T 240 "20 51 32 400 0.36 0.14 350 Unit V mA W _C/W _C 11-1 TN2460L/TN2460T Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS TJ = 125_C VDS = 10 V, VGS =10 V ID(on) VDS = 10 V, VGS = 4.5 V VGS = 10 V, ID = 0.05 A Drain-Source On-Resistanceb rDS(on) VGS = 4.5 V, ID = 0.02 A TJ = 125_C Forward Transconductanceb gfs VDS = 10 V, ID = 0.05 A 30 75 20 140 130 38 40 75 70 60 60 120 mS W mA "5 0.1 5 mA 240 0.5 260 1.65 1.8 "10 nA V Symbol Test Conditions Min Typa Max Unit On-State Drain Currentb Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = 1 MHz 14 4 1 30 15 10 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = 25 V, RL = 500 W ID ^ 0.05 A, VGEN = 10 V, RG = 25 W 8 20 20 ns 35 VNDN24 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v80 ms duty cycle v1%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70205 S-04279—Rev. D , 16-Jul-01 TN2460L/TN2460T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 200 VGS = 10 V 160 ID – Drain Current (mA) 4V ID – Drain Current (mA) 80 125_C 60 100 TJ = –55_C 25_C Transfer Characteristics 120 80 3V 40 2V 0 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) 40 20 VDS = 15 V 0 0 1 2 3 4 5 VGS – Gate-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 100 90 rDS(on) – On-Resistance ( Ω ) 80 70 ID = 100 mA 60 50 50 mA 40 10 mA 30 0 4 8 12 16 20 VGS – Gate-Source Voltage (V) 0 0 rDS(on) – On-Resistance ( Ω ) 100 125 On-Resistance vs. Drain Current VGS = 10 V 75 50 25 50 100 150 200 250 ID – Drain Current (A) Normalized On-Resistance vs. Junction Temperature 2.25 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) Document Number: 70205 S-04279—Rev. D , 16-Jul-01 0.01 0.75 VGS = 4.5 V ID = 50 mA ID – Drain Current (mA) 10 VDS = 5 V Threshold Region TJ = 150_C 1 75_C 25__C 0.1 –55_C 1 1.25 1.5 1.75 2 2.25 2.5 VGS – Gate-Source Voltage (V) www.vishay.com 11-3 TN2460L/TN2460T Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Capacitance 20 VGS = 0 V f = 1 MHz Ciss 12 VGS – Gate-to-Source Voltage (V) 16 C – Capacitance (pF) 12.5 15.0 ID = 30 mA Gate Charge 10.0 7.5 VDS = 100 V 5.0 192 V 2.5 8 Coss 4 Crss 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) 0 0 50 100 150 200 250 300 Qg – Total Gate Charge (pC) Load Condition Effects on Switching 100 50 t – Switching Time (ns) VDD = 25 V RG = 25 W VGS = 0 to 10 V t – Switching Time (ns) 50 Drive Resistance Effects on Switching VDD = 25 V RL = 500 W VGS = 0 to 10 V ID = 50 mA tf 10 td(off) tr td(on) 20 10 5 td(off) tf tr td(on) 2 2 1 10 20 50 100 ID – Drain Current (A) 1 10 20 RG – Gate Resistor (W) 50 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM 0.01 Single Pulse 0.01 0.1 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70205 S-04279—Rev. D , 16-Jul-01