TP0101K

Specification Comparison Vishay Siliconix TP0101K vs. TP0101T Description: Package: Pin Out: P-Channel,20-V (D-S) MOSFET, Low Threshold SOT-23 Identical Part Number Replacements: TP0101K-T1-E3 Replaces TP0101T-T1-E3 TP0101K-T1-E3 Replaces TP0101T-T1 Summary of Performance: The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate increases Gate-Body Leakage; otherwise, there is little variation regarding performance. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol TP0101K TP0101T Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source Current (MOSFET Diode Conduction) Power Dissipation TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range Maximum Junction-to-Ambient TA = 25°C TA = 70°C VDS VGS ID IDM IS PD Tj & Tstg RthJA -20 +8 -0.58 -0.46 -2 -0.3 0.35 0.22 -55 to 150 357 -20 +8 -0.6 -0.48 -3 -0.6 0.35 0.22 -55 to 150 357 W °C °C/W A V SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) Parameter Static Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current VGS = -4.5 V VGS = -2.5 V VGS= -4.5 V VGS = -2.5 V VGS(th) IGSS IDSS -1.2 ID(on) -0.5 0.42 rDS(on) gfs VSD Qg Qgs Qgd Rg 0.64 1300 -0.9 1400 300 250 150 25 30 55 38 -1.2 2200 0.65 0.85 -0.5 -0.7 -1.0 +5000 -1 -2.5 -0.5 0.45 0.69 1300 -0.9 2020 180 720 NS 7 25 19 9 -1.2 3000 nC Ω 12 35 30 15 ns 0.65 0.85 A Ω S V -0.5 -0.9 -1.5 +100 -1 V nA µA Symbol Min TP0101K Typ Max Min TP0101T Typ Max Unit Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Switchinga Turn-On Time td(on) tr td(off) tf 35 45 85 60 Turn-Off Time NS denotes not specified in original datasheet Document Number 74071 11-May-05 www.vishay.com