TP0205AD

TP0205A/AD New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 3.8 @ VGS = –4.5 V 5.0 @ VGS = –2.5 V ID (mA) –180 –100 FEATURES D D D D D High-Side Switching Low On-Resistance: 2.6 W (typ) Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5 V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories D Battery Operated Systems D Load/Power Switching-Cell Phones, PDA SOT-323 SC-70 (3-Leads) G 1 3 S 2 D S1 G1 D2 1 2 3 SOT-363 SC-70 (6-Leads) 6 5 4 D1 G2 S2 Marking Code: TP0205A: Al TP0205AD: Cwl w = Week Code l = Lot Traceability Order Number: TP0205A Order Number: TP0205AD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM TP0205A –20 "8 –180 –140 –500 0.15 TP0205AD Unit V mA 0.20 (Total) 0.13 (Total) –55 to 150 W _C PD TJ, Tstg 0.10 THERMAL RESISTANCE RATINGS Parameter Thermal resistance, Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70869 S-04279—Rev. B, 16-Jul-01 www.vishay.com Symbol RthJA TP0205A 833 TP0205AD 625 (Total) Unit _C/W 11-1 TP0205A/AD Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VDS = 0 V, ID = –10 mA VDS = VGS, ID = –50 mA VDS = 0 V, VGS = "8 V VDS = –20 V, VGS = 0 V VDS = –20 V, VGS = 0 V, TJ = 55_C VGS = –4.5 V, VDS = –8.0 V VGS = –2.5 V, VDS = –5.0 V VGS = –4.5 V, ID = –180 mA rDS(on) gfs VSD VGS = –2.5 V, ID = –400 –120 2.6 4.0 200 –0.7 –1.2 3.8 5.0 W mS V mA –20 –0.4 –24 V –0.9 "2 –0.001 –1.5 "100 nA –100 –1 mA Symbol Test Condition Min Typb Max Unit On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea –75 mA VDS = –2.5 V, ID = –50 mA IS = –50 mA, VGS = 0 V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = –5.0 V, VGS = 0 V, f = 1 MHz VDS = –5.0 V, VGS = –4.5 V, ID = –100 mA 350 25 125 20 14 5 pF 450 pC Switching c Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = –3.0 V, RL = 100 W ID = –0.25 A, VGEN = –4.5 V, RG = 10 W 7 25 19 9 12 35 30 15 VPOJ ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. For design only, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 Document Number: 70869 S-04279—Rev. B, 16-Jul-01 TP0205A/AD New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics –1.2 5V –0.4 4.5 V –0.8 –4 V –3.5 V –3 V –2.5 V –2 V 0.0 0 –1 –2 –3 –4 0.0 0.0 –3.0 ID – Drain Current (A) 25_C –0.3 125_C –0.5 TJ = –55_C Vishay Siliconix Transfer Characteristics –1.0 ID – Drain Current (A) –0.6 –0.2 –0.4 –0.2 –0.1 –0.5 –1.0 –1.5 –2.0 –2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8 45 VGS = 0 V f = 1 MHz rDS(on) – On-Resistance ( Ω ) 36 C – Capacitance (pF) 6 Capacitance VGS = –2.5 V 4 VGS = –4.5 V 2 27 Ciss 18 Coss 9 Crss 0 0.0 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 0 –3 –6 –9 –12 ID – Drain Current (A) –10 VGS – Gate-to-Source Voltage (V) VDS = –6 V ID = 80 mA VDS – Drain-to-Source Voltage (V) Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = –4.5 V ID = –180 mA rDS(on) – On-Resistance ( Ω ) (Normalized) –8 1.4 –6 1.2 –4 1.0 –2 0.8 0 0 100 200 300 400 500 600 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (pC) TJ – Junction Temperature (_C) Document Number: 70869 S-04279—Rev. B, 16-Jul-01 www.vishay.com 11-3 TP0205A/AD Vishay Siliconix New Product TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage –1 TJ = 150_C rDS(on) – On-Resistance ( Ω ) LS – Source Current (A) 6 On-Resistance vs. Gate-to-Source Voltage 5 –0.1 4 ID = –180 mA 3 –0.01 TJ = 25_C 2 1 –0.001 0.00 –0.5 –1.0 1.5 0 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 –4.5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = –50 mA 0.2 VGS(th) – Variance (V) 0.1 0.0 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 11-4 Document Number: 70869 S-04279—Rev. B, 16-Jul-01