TPSMA68

TPSMA6.8 thru TPSMA43A Vishay Semiconductors formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressors DO-214AC (SMA) Cathode Band 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) ted* aten P Dimensions in inches and (millimeters) Breakdown Voltage 6.8 to 43.0V Peak Pulse Power 400W Mounting Pad Layout 0.060 MIN (1.52 MIN) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.094 MAX (2.38 MAX) 0.050 MIN (1.27 MIN) 0.220 REF (5.58) 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) MAX. 0.208 (5.28) 0.194 (4.93) *Patent #’s 4,980,315 5,166,769 5,278,094 Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Ideal for automated placement • Low profile package • Built-in strain relief • Exclusive patented PAR® oxide passivated chip construction • 400W peak pulse power capability with a 10/1000ms waveform, repetition rate (duty cycle): 0.01% • Excellent clamping capability • Low incremental surge resistance • Very fast response time • For devices with V(BR) ≥ 10V ID are typically less than 1.0mA at TA = 150°C • Designed for under the hood surface mount applications • High temperature soldering: 250°C/10 seconds at terminals A Available in uni-directional only Mechanical Data Case: JEDEC DO-214AC molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: The color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.002 oz., 0.064 g Packaging codes/options: 5A/7.5K per 13" Reel (12mm Tape), 90K/box 11/1.8K per 7" Reel (12mm Tape), 36K/box Maximum Ratings and Thermal Characteristics (T Parameter Peak power dissipation with a 10/1000µs waveform(1)(2) (Fig. 3) Peak power pulse current with a 10/1000µs waveform(1) (Fig. 1) Peak forward surge current 8.3ms single half sine-wave(3) Maximum instantaneous forward voltage at 25A (3) = 25°C unless otherwise noted) Symbol PPPM IPPM IFSM VF TJ, TSTG Value Minimum 400 See Next Table 40 3.5 –65 to +185 Unit W A A V °C Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2 (2) Mounted on P.C.B. with 0.2 x 0.2” (5.0 x 0.5mm) copper pads attached to each terminal (3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum Document Number 88405 06-May-02 www.vishay.com 1 TPSMA6.8 thru TPSMA43A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T A = 25°C unless otherwise noted) Device Device Marking Code Breakdown Voltage V(BR)(1) at IT (V) Min. Max. Test Current IT (mA) Stand-off Voltage VWM (Volts) Maximum Reverse Leakage at VWM IR (µA) TJ = 150°C Maximum Maximum Peak Pulse Reverse Surge Leakage Current at VWM IPPM (Note 2) ID (µA) (Amps) Maximum Clamping Voltage at IPPM Vc (Volts) TPSMA6.8 TPSMA6.8A TPSMA7.5 TPSMA7.5A TPSMA8.2 TPSMA8.2A TPSMA9.1 TPSMA9.1A TPSMA10 TPSMA10A TPSMA11 TPSMA11A TPSMA12 TPSMA12A TPSMA13 TPSMA13A TPSMA15 TPSMA15A TPSMA16 TPSMA16A TPSMA18 TPSMA18A TPSMA20 TPSMA20A TPSMA22 TPSMA22A TPSMA24 TPSMA24A TPSMA27 TPSMA27A TPSMA30 TPSMA30A TPSMA33 TPSMA33A TPSMA36 TPSMA36A TPSMA39 TPSMA39A TPSMA43 TPSMA43A ADP AEP AFP AGP AHP AKP ALP AMP ANP APP AQP ARP ASP ATP AUP AVP AWP AXP AYP AZP BDP BEP BFP BGP BHP BKP BLP BMP BNP BPP BQP BRP BSP BTP BUP BVP BWP BXP BYP BZP 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.50 10.80 11.40 11.70 12.40 13.50 14.30 14.40 15.20 16.20 17.10 18.00 19.00 19.80 20.90 21.60 22.80 24.30 25.70 27.00 28.50 29.70 31.40 32.40 34.20 35.10 37.10 38.70 40.90 7.48 7.14 8.25 7.88 9.02 8.61 10.00 9.55 11.00 10.50 12.10 11.60 13.20 12.60 14.30 13.70 16.30 15.80 17.60 16.80 19.80 18.90 22.00 21.00 24.20 23.10 26.40 25.20 29.70 28.40 33.00 31.50 36.30 34.70 39.60 37.80 42.90 41.00 47.30 45.20 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.65 8.92 9.40 9.72 10.20 10.50 11.10 12.10 12.80 12.90 13.60 14.50 15.30 16.20 17.10 17.80 18.80 19.40 20.50 21.80 23.10 24.30 25.60 26.80 28.20 29.10 30.80 31.60 33.30 34.80 36.80 300 300 150 150 50 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1000 1000 500 500 200 200 50 50 20 20 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 37.0 38.1 34.2 35.4 32.0 33.1 29.0 29.9 26.7 27.6 24.7 25.6 23.1 24.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13. 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22 26.5 25.5 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47. 45.7 52.0 49.9 56.4 53.9 61.9 59.3 Notes: (1) V(BR) measured after IT applied for 300µs, IT=square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88405 06-May-02 TPSMA6.8 thru TPSMA43A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig.1 – Peak Pulse Power Rating Curve TA = 25°C Non-repetitive pulse waveform shown in Fig. 3 10 Fig. 2 – Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 100 100 PPPM, Peak Power (KW) 75 50 1.0 25 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas 0.1 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms 0 0 50 100 150 200 td, Pulse Width, sec. TA, Ambient Temperature (°C) Fig. 3 – Pulse Waveform 150 10,000 tr = 10µsec. Peak Value IPPM Fig. 4 – Typical Junction Capacitance TJ = 25°C f = 1 MHz Vsig = 50mVp-p 1,000 VR measured at zero bias IPPM — Peak Pulse Current, % IRSM 100 Half Value — IPP 2 IPPM 50 10/1000µsec. Waveform as defined by R.E.A. CJ, Junction Capacitance, pF TJ = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM 100 VR measured at stand-off voltage, VWM 10 1 10 100 200 td 0 0 1.0 2.0 3.0 4.0 t — Time (ms) V(BR), Breakdown Voltage (V) Fig. 5 – Maximum Non-Repetitive Peak Forward Surge Current 200 IFSM, Peak Forward Surge Current (A) TJ = TJ max 8.3ms single half sine-wave (JEDEC method) 100 50 10 1 5 10 50 100 Number of Cycles at 60 Hz Document Number 88405 06-May-02 www.vishay.com 3