TPSMB6.8 thru TPSMB43A
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high reliability and automotive requirement • Available in uni-directional polarity only • 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance PRIMARY CHARACTERISTICS
VBR PPPM IFSM TJ max. 6.8 V to 43 V 600 W 75 A 185 °C
DO-214AA (SMB)
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end
TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (fig. 1) Peak pulse current with a 10/1000 µs waveform (1)
(3)
SYMBOL PPPM IPPM IFSM VF TJ, TSTG
VALUE 600 See next table 75 3.5 - 65 to + 185
UNIT W A A V °C
(fig. 3)
Peak forward surge current 8.3 ms single half sine-wave (2)(3) Instantaneous forward voltage at 50 A
Operating junction and storage temperature range Notes
(1) (2)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2 Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) land areas per figure (3) Mounted on 8.3 ms single half sine-wave duty cycle = 4 pulses per minute maximum
Document Number: 88406 Revision: 09-Feb-11
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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TPSMB6.8 thru TPSMB43A
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) MIN. TPSMB6.8 TPSMB6.8A TPSMB7.5 TPSMB7.5A TPSMB8.2 TPSMB8.2A TPSMB9.1 TPSMB9.1A TPSMB10 TPSMB10A TPSMB11 TPSMB11A TPSMB12 TPSMB12A TPSMB13 TPSMB13A TPSMB15 TPSMB15A TPSMB16 TPSMB16A TPSMB18 TPSMB18A TPSMB20 TPSMB20A TPSMB22 TPSMB22A TPSMB24 TPSMB24A TPSMB27 TPSMB27A TPSMB30 TPSMB30A TPSMB33 TPSMB33A TPSMB36 TPSMB36A TPSMB39 TPSMB39A TPSMB43 TPSMB43A Notes
(1) (2)
DEVICE
TEST CURRENT IT (mA)
STANDOFF VOLTAGE VWM (V) 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8
MAX. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 500 500 250 250 100 100 25.0 25.0 5.0 5.0 2.0 2.0 2.0 2.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 1000 1000 500 500 200 200 50.0 50.0 20.0 20.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0
MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 55.6 57.1 51.3 53.1 48.0 49.6 43.5 44.8 40.0 41.4 37.0 38.5 34.7 35.9 31.6 33.0 27.3 28.3 25.5 26.7 22.6 23.8 20.6 21.7 18.8 19.6 17.3 18.1 15.3 16.0 13.8 14.5 12.6 13.1 11.5 12.0 10.6 11.1 9.70 10.1
MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3
KDP KEP KFP KGP KHP KKP KLP KMP KNP KPP KQP KRP KSP KTP KUP KVP KWP KXP KYP KZP LDP LEP LFP LGP LHP LKP LLP LMP LNP LPP LQP LRP LSP LTP LUP LVP LWP LXP LYP LZP
6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9
VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent Surge current waveform per fig. 3 and derated per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88406 Revision: 09-Feb-11
TPSMB6.8 thru TPSMB43A
Vishay General Semiconductor
ORDERING INFORMATION (Example)
PREFERRED P/N TPSMB6.8AHE3/52T (1) TPSMB6.8AHE3/5BT (1) Note
(1)
UNIT WEIGHT (g) 0.096 0.096
PREFERRED PACKAGE CODE 52T 5BT
BASE QUANTITY 750 3200
DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100 150 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM
IPPM - Peak Pulse Current, % IRSM
PPPM - Peak Pulse Power (kW)
tr = 10 µs Peak Value IPPM
100
Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0
1.0 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
td - Pulse Width (s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, %
100
10 000
75
Junction Capacitance (pF)
VR measured at Zero Bias 1000
50
VR measured at Stand-Off Voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 10 100
25
0 0 50 100 150 200
TJ - Initial Temperature (°C)
VBR - Breakdown Voltage (V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
Document Number: 88406 Revision: 09-Feb-11
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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TPSMB6.8 thru TPSMB43A
Vishay General Semiconductor
100
Peak Forward Surge Current (A)
TJ = TJ max. 8.3 ms Single Half Sine-Wave
10 1 10 100
Number of Cycles at 60 Hz
Figure 5. Maximum Non-Repetitive Peak Forward Surge Current
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
0.085 (2.159) MAX.
Mounting Pad Layout
0.086 (2.20) 0.077 (1.95)
0.155 (3.94) 0.130 (3.30) 0.086 (2.18) MIN.
0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) MIN. 0.220 REF.
0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)
0.008 (0.2) 0 (0)
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 88406 Revision: 09-Feb-11
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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