TPSMB6.8AHE35BT

TPSMB6.8 thru TPSMB43A Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR® construction • Available in uni-directional polarity only • 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % * nted e Pat *Patent #'s 4,980,315 5,166,769 5,278,094 • Excellent clamping capability • Very fast response time • Low incremental surge resistance DO-214AA (SMB) • Meets MSL level 1, per J-STD-020C, LF max peak of 260 °C • Solder dip 260 °C, 40 seconds • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-214AA (SMB) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D HE3 suffix for high reliability grade (AEC Q101 qualified) Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS VBR PPPM IFSM TJ max. 6.8 V to 43 V 600 W 75 A 185 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) Peak pulse current with a 10/1000 µs waveform Instantaneous forward voltage at 50 A (3) Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) land areas per figure (3) Mounted on 8.3 ms single half sine-wave duty cycle = 4 pulses per minute maximum (1) SYMBOL PPPM IPPM IFSM VF TJ, TSTG VALUE 600 See next table 75 3.5 - 65 to + 185 UNIT W A A V °C (Fig. 3) (2)(3) Peak forward surge current 8.3 ms single half sine-wave www.vishay.com 158 Document Number: 88406 Revision: 10-May-07 TPSMB6.8 thru TPSMB43A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR (1) AT IT (V) MIN. TPSMB6.8 TPSMB6.8A TPSMB7.5 TPSMB7.5A TPSMB8.2 TPSMB8.2A TPSMB9.1 TPSMB9.1A TPSMB10 TPSMB10A TPSMB11 TPSMB11A TPSMB12 TPSMB12A TPSMB13 TPSMB13A TPSMB15 TPSMB15A TPSMB16 TPSMB16A TPSMB18 TPSMB18A TPSMB20 TPSMB20A TPSMB22 TPSMB22A TPSMB24 TPSMB24A TPSMB27 TPSMB27A TPSMB30 TPSMB30A TPSMB33 TPSMB33A TPSMB36 TPSMB36A TPSMB39 TPSMB39A TPSMB43 TPSMB43A Notes: (1) VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derated per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 KDP KEP KFP KGP KHP KKP KLP KMP KNP KPP KQP KRP KSP KTP KUP KVP KWP KXP KYP KZP LDP LEP LFP LGP LHP LKP LLP LMP LNP LPP LQP LRP LSP LTP LUP LVP LWP LXP LYP LZP 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 MAX. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 TEST CURRENT IT (mA) STANDOFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 500 500 250 250 100 100 25.0 25.0 5.0 5.0 2.0 2.0 2.0 2.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 TJ = 150 °C MAXIMUM REVERSE LEAKAGE AT VWM ID (µA) 1000 1000 500 500 200 200 50.0 50.0 20.0 20.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 55.6 57.1 51.3 53.1 48.0 49.6 43.5 44.8 40.0 41.4 37.0 38.5 34.7 35.9 31.6 33.0 27.3 28.3 25.5 26.7 22.6 23.8 20.6 21.7 18.8 19.6 17.3 18.1 15.3 16.0 13.8 14.5 12.6 13.1 11.5 12.0 10.6 11.1 9.70 10.1 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.2 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 DEVICE Document Number: 88406 Revision: 10-May-07 www.vishay.com 159 TPSMB6.8 thru TPSMB43A Vishay General Semiconductor ORDERING INFORMATION (Example) PREFERRED P/N TPSMB6.8AHE3/52T (1) TPSMB6.8AHE3/5BT (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.096 0.096 PREFERRED PACKAGE CODE 52T 5BT BASE QUANTITY 750 3200 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 150 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 10 tr = 10 µs Peak Value IPPM TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 1.0 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 10000 75 Junction Capacitance (pF) VR measured at Zero Bias 1000 50 VR measured at Stand-Off Voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 10 100 25 0 0 50 100 150 200 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 4. Typical Junction Capacitance www.vishay.com 160 Document Number: 88406 Revision: 10-May-07 TPSMB6.8 thru TPSMB43A Vishay General Semiconductor 100 Peak Forward Surge Current (A) TJ = TJ max. 8.3 ms Single Half Sine-Wave 10 1 10 100 Number of Cycles at 60 Hz Figure 5. Maximum Non-Repetitive Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 (2.159) MAX. 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) MIN. 0.220 REF. 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.008 (0.2) 0 (0) Document Number: 88406 Revision: 10-May-07 www.vishay.com 161 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1