TPSMP27A

TPSMP27A

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    TPSMP27A - High Power Density Surface Mount Automotive Transient Voltage Suppressors - Vishay Silico...

  • 详情介绍
  • 数据手册
  • 价格&库存
TPSMP27A 数据手册
New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount Automotive Transient Voltage Suppressors eSMP TM Series * nted e Pat *Patent #'s 4,980,315 5,166,769 5,278,094 DO-220AA (SMP) FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Uni-direction only • Exclusive patented PAR oxide passivated chip construction • Excellent clamping capability • Low incremental surge resistance • Very fast response time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Protection for Ics, drive transistors, signal lines of sensor units, and electronic units in consumer, computer, industrial and automotive applications. MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS VBR PPPM (for VBR 6.8 V) PPPM (for VBR 7.5 V to 12 V) PPPM (for VBR 13 V to 43 V) PD IFSM TJ max. 6.8 V to 43 V 250 W 300 W 400 W 2.5 W 40 A 185 °C MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1 and 3) Peak power pulse current with a 10/1000 µs waveform Power dissipation on infinite heatsink, TA = 75 °C Peak forward surge current 10 ms single half sine-wave superimposed on rated load Maximum instantaneous forward voltage at 25 A (3) Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Mounted on P.C.B. with 5.0 x 5.0 mm copper pads attached to each terminal (3) Pulse test: 300 µs pulse width, 1 % duty cycle (1) SYMBOL PPPM IPPM PD IFSM VF TJ, TSTG VALUE See table next page See table next page 2.5 40 2.5 - 65 to + 185 UNIT W A W A V °C (Fig. 1) Document Number: 88471 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) BREAKDOW N VOLTAGE VBR (1) AT IT (V) MIN. 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9.90 10.5 10.8 11.4 11.7 12.4 13.5 14.3 14.4 15.2 16.2 17.1 18.0 19.0 19.8 20.9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 MAX. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.3 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23.1 26.4 25.2 29.7 28.4 33.0 31.5 36.3 34.7 39.6 37.8 42.9 41.0 47.3 45.2 MAXIMUM MAXIMUM REVERSE STANDREVERSE TEST LEAKAGE OFF LEAKAGE CURRENT AT VWM VOLTAGE AT VWM IT (mA) VWM (V) TJ = 150 °C IR (µA) ID (µA) 10.0 10.0 10.0 10.0 10.0 10.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 8.10 8.55 8.92 9.40 9.72 10.2 10.5 11.1 12.1 12.8 12.9 13.6 14.5 15.3 16.2 17.1 17.8 18.8 19.4 20.5 21.8 23.1 24.3 25.6 26.8 28.2 29.1 30.8 31.6 33.3 34.8 36.8 300 300 150 150 50.0 50.0 10.0 10.0 5.0 5.0 2.0 2.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1000 1000 500 500 200 200 50.0 50.0 20.0 20.0 10.0 10.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 MAXIMUM PEAK PULSE SURGE CURRENT IPPM (2) (A) 23.2 23.8 25.6 26.5 24.0 24.8 21.7 22.4 20.0 20.7 18.5 19.2 17.3 18.0 21.1 22.0 18.2 18.9 17.0 17.8 15.1 15.9 13.7 14.4 12.5 13.1 11.5 12.0 10.2 10.7 9.2 9.7 8.4 8.8 7.7 8.0 7.1 7.4 6.5 6.7 MAXIMUM MAXIMUM CLAMPING TEMPERATURE VOLTAGE COEFFICIENT AT IPPM OF VBR VC (V) (%/°C) 10.8 10.5 11.7 11.3 12.5 12.1 13.8 13.4 15.0 14.5 16.2 15.6 17.3 16.7 19.0 18.2 22.0 21.2 23.5 22.5 26.5 25.5 29.1 27.7 31.9 30.6 34.7 33.2 39.1 37.5 43.5 41.4 47.7 45.7 52.0 49.9 56.4 53.9 61.9 59.3 0.057 0.057 0.060 0.061 0.065 0.065 0.068 0.068 0.073 0.073 0.075 0.075 0.076 0.078 0.081 0.081 0.084 0.084 0.086 0.086 0.088 0.088 0.090 0.090 0.092 0.092 0.094 0.094 0.100 0.096 0.097 0.097 0.098 0.098 0.099 0.099 0.100 0.100 0.101 0.101 DEVICE TYPE DEVICE MARKING CODE TPSMP6.8 TPSMP6.8A TPSMP7.5 TPSMP7.5A TPSMP8.2 TPSMP8.2A TPSMP9.1 TPSMP9.1A TPSMP10 TPSMP10A TPSMP11 TPSMP11A TPSMP12 TPSMP12A TPSMP13 TPSMP13A TPSMP15 TPSMP15A TPSMP16 TPSMP16A TPSMP18 TPSMP18A TPSMP20 TPSMP20A TPSMP22 TPSMP22A TPSMP24 TPSMP24A TPSMP27 TPSMP27A TPSMP30 TPSMP30A TPSMP33 TPSMP33A TPSMP36 TPSMP36A TPSMP39 TPSMP39A TPSMP43 TPSMP43A Notes: ADP AEP AFP AGP AHP AKP ALP AMP ANP APP AQP ARP ASP ATP AUP AVP AWP AXP AYP AZP BDP BEP BFP BGP BHP BKP BLP BMP BNP BPP BQP BRP BSP BTP BUP BVP BWP BXP BYP BZP (1) VBR measured after IT applied for 300 µs, IT = square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derated per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88471 Revision: 21-Oct-08 New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor ORDERING INFORMATION (Example) PREFERRED P/N TPSMP6.8AHE3/84A (1) TPSMP6.8AHE3/85A (1) Note: (1) Automotive grade AEC Q101 qualified UNIT WEIGHT (g) 0.024 0.024 PREFERRED PACKAGE CODE 84A 85A BASE QUANTITY 3000 10000 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 150 TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM IPPM - Peak Pulse Current, % IRSM TPSMP13 - TPSMP43A tr = 10 µs Peak Value IPPM PPPM - Peak Power (kW) TPSMP7.5 - TPSMP12A 1.0 TPSMP6.8 100 Half Value - IPP IPPM 2 50 10/1000 µs Waveform as defined by R.E.A. td 0 0 1.0 2.0 3.0 4.0 0.1 0.01 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms td - Pulse Width (s) t - Time (ms) Figure 1. Peak Pulse Power Rating Curve Figure 3. Pulse Waveform Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) 100 10 000 75 CJ - Junction Capacitance (pF) 1000 VR, measured at Zero Bias 50 VR measured at Stand-Off Voltage, VWM 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 10 100 25 0 0 25 50 75 100 125 150 175 200 TJ - Initial Temperature (°C) VBR - Breakdown Voltage (V) Figure 2. Pulse Derating Curve Figure 4. Typical Junction Capacitance Document Number: 88471 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor 40 3.0 TA = TL, on Infinite Heatsink Peak Forward Surge Current (A) 35 30 25 20 15 10 5 0 1 10 100 PM(AV) - Steady State Power Dissipation (W) 2.5 2.0 1.5 FR-4 PCB, on Vishay minimum recommended Pad Layout 1.0 0.5 0.0 0 25 50 75 100 125 150 175 200 Number of Cycles at 50 Hz TA - Ambient Temperature (°C) Figure 5. Maximum Peak Forward Surge Current Figure 6. Steady State Power Derating Curve PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) Cathode Band 0.012 (0.30) REF. 0.086 (2.18) 0.074 (1.88) 0.053 (1.35) 0.041 (1.05) 0.036 (0.91) 0.024 (0.61) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.000 (0.00) 0.100 (2.54) 0.018 (0.45) 0.006 (0.15) 0.105 (2.67) 0.025 (0.635) 0.030 (0.762) 0.050 (1.27) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88471 Revision: 21-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
TPSMP27A
1. 物料型号: - 型号包括TPSMP6.8至TPSMP43A,由Vishay General Semiconductor生产。

2. 器件简介: - 这些是高功率密度表面贴装汽车瞬态电压抑制器,具有专利技术,符合RoHS标准。

3. 引脚分配: - 封装形式为DO-220AA (SMP),具有两个引脚,并且标记了极性,通过色带来表示阴极端。

4. 参数特性: - 主要特性包括不同VBR电压下的峰值功率(PppM),功率耗散(PD),峰值正向浪涌电流(IFSM),最大瞬态电压(VF),工作结温和存储温度范围(TJTSTG)。

5. 功能详解: - 这些器件具有非常低的轮廓,典型高度为1.0毫米,适合自动放置,具有单向特性,专利的PAR氧化膜钝化芯片结构,优秀的钳位能力,低增量浪涌电阻,非常快的响应时间,满足MSL水平1,符合RoHS和WEEE标准。

6. 应用信息: - 用于保护集成电路、驱动晶体管、传感器单元和电子单元的信号线,在消费电子、计算机、工业和汽车应用中使用。

7. 封装信息: - 封装为DO-220AA (SMP),模塑料符合UL 94 V-0可燃性等级,基材P/NHE3符合RoHS,高可靠性/汽车级(AEC Q101合格),端子为镀锡铅,可焊接,符合J-STD-002和JESD22-B102标准,HE3后缀符合JESD 201 class 2须测试。
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