TSAL5100

TSAL5100 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters. 96 11505 Features • • • • • • • • • • Extra high radiant power and radiant intensity High reliability Low forward voltage Suitable for high pulse current operation Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 10° Peak wavelength λp = 940 nm Good spectral matching to Si photodetectors Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t ≤ 5 sec, 2 mm from case tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 210 100 - 55 to + 100 - 55 to + 100 260 350 Unit V mA mA A mW °C °C °C °C K/W Document Number 81007 Rev. 1.3, 08-Mar-05 www.vishay.com 1 TSAL5100 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction capacitance Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 Symbol VF VF TKVF IR Cj 25 Min Typ. 1.35 2.6 - 1.3 10 Max 1.6 3 Unit V V mV/K µA pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Radiant Intensity Radiant Power Temp. Coefficient of φe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of λp Rise Time Fall Time Virtual Source Diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA method: 63 % encircled energy Test condition IF = 100 mA, tp = 20 ms IF = 1.0 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 20 mA Symbol Ie Ie φe TKφe ϕ λp ∆λ TKλp tr tf ∅ Min 80 650 Typ. 130 1000 35 - 0.6 ± 10 940 50 0.2 800 800 3.7 Max 400 Unit mW/sr mW/sr mW %/K deg nm nm nm/K ns ns mm Typical Characteristics (Tamb = 25 °C unless otherwise specified) 250 PV - Power Dissipation ( mW ) IF – Forward Current ( mA) 250 200 200 150 R thJA 100 150 100 RthJA 50 0 50 0 0 20 40 60 80 100 0 96 11986 20 40 60 80 100 94 7957 Tamb - Ambient Temperature ( °C ) Tamb – Ambient T emperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.com 2 Document Number 81007 Rev. 1.3, 08-Mar-05 TSAL5100 Vishay Semiconductors 101 I e – Radiant Intensity ( mW/sr ) I F – Forward Current (A) 1000 I FSM = 1 A ( Single Pulse ) tp/T=0.01 100 0.05 0.1 0.5 1.0 10–1 10–2 100 10 1 0.1 10–1 100 101 tp – Pulse Duration ( ms ) 102 14438 100 96 11987 101 102 103 I F – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current 10 4 I F - Forward Current ( mA ) Φ e - Radiant Power ( mW ) 1000 10 3 100 10 2 10 t p = 100 µ s tp / T = 0.001 10 1 1 10 0 0 13600 1 2 3 4 13602 0.1 10 0 V F - Forward Voltage ( V ) 10 1 10 2 10 3 I F - Forward Current ( mA ) 10 4 Figure 4. Forward Current vs. Forward Voltage Figure 7. Radiant Power vs. Forward Current 1.2 V Frel - Relative Forward Voltage 1.6 1.1 I e rel ; Φe rel 1.2 I F = 10 mA I F = 20 mA 0.8 1.0 0.9 0.4 0.8 0.7 0 20 40 60 80 100 94 7993 0 -10 0 10 50 100 140 94 7990 T amb - Ambient Temperature ( ° C ) T amb - Ambient Temperature ( ° C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature Document Number 81007 Rev. 1.3, 08-Mar-05 www.vishay.com 3 TSAL5100 Vishay Semiconductors 0° Ie rel – Relative Radiant Intensity 1.25 10 ° 20 ° Φ rel – Relative Radiant Power e 30° 1.0 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.75 0.5 0.25 I F = 100 mA 0 890 940 990 0.6 15989 0.4 0.2 0 0.2 0.4 0.6 14291 λ – Wavelength ( nm ) Figure 9. Relative Radiant Power vs. Wavelength Figure 10. Relative Radiant Intensity vs. Angular Displacement Package Dimensions in mm 14435 www.vishay.com 4 Document Number 81007 Rev. 1.3, 08-Mar-05 TSAL5100 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81007 Rev. 1.3, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1