TSAL5300

TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Leads with stand-off • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity 96 11505 • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Infrared remote control units with high power requirements • Free air transmission systems • Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) ± 22 λP (nm) 940 tr (ns) 800 TSAL5300 45 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TSAL5300 TSAL5300-MSZ Note MOQ: minimum order quantity PACKAGING Bulk Tape and ammopack REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 5000 pcs, 1000 pcs/ammopack PACKAGE FORM T-1¾ T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1.5 160 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W www.vishay.com 94 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81008 Rev. 1.9, 04-Sep-08 TSAL5300 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Vishay Semiconductors 180 120 100 80 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21212 IF - Forward Current (mA) RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 230 K/W 21211 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1 A IF = 100 mA IF = 1 A Method: 63 % encircled energy TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 20 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tr tf tf d 30 260 25 45 350 35 - 0.6 ± 22 940 50 0.2 800 500 800 500 2.3 150 MIN. TYP. 1.35 2.6 - 1.8 10 MAX. 1.6 3 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm Document Number: 81008 Rev. 1.9, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 95 TSAL5300 Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs 10 1 I F - Forward Current (A) Φ e - Radiant Power (mW) 1000 I FSM = 1 A (Single Pulse) t p/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 10 -2 100 10 1 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 13602 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Power vs. Forward Current 104 IF - Forward Current (mA) 1.6 103 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 102 tP = 100 µs tP/T = 0.001 101 0.4 100 0 13600 1 2 3 4 0 - 10 0 10 94 7993 50 100 140 VF - Forward Voltage (V) T amb - Ambient Temperature (°C) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 I e - Radiant Intensity (mW/sr) Φ rel - Relative Radiant Power e 1.25 100 1.0 0.75 10 0.5 1 0.25 IF = 100 mA 0 890 940 990 0.1 100 14327 101 102 103 I F - Forward Current (mA) 104 14291 λ - Wavelength (nm) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength www.vishay.com 96 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81008 Rev. 1.9, 04-Sep-08 TSAL5300 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Vishay Semiconductors 0° 10° 20° 30° Ie rel - Relative Radiant Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 94 8883 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A C 5.8 ± 0.15 ϕ - Angular Displacement R 2.49 (sphere) ± 0.3 ± 0.3 7.7 ± 0.15 (3.6) 11.4 < 0.7 8.7 34.4 ± 0.55 Area not plane 1.2 + 0.2 - 0.1 Ø5 ± 0.15 1.5 ± 0.25 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.05-4 Issue: 7; 08.11.99 96 12122 Document Number: 81008 Rev. 1.9, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 97 TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs TAPE DIMENSIONS TSAL5300 OPTION CS21Z FSZ GSZ MSZ ±1 H ± 0.5 mm 22 27 29 25.5 QUANTITY/BOX 1000 1000 1000 1000 ±2 12.7 ± 1 0.3 ± 0.2 +1 - 0.5 ± 0.3 18 12 9 ± 0.5 “H” 0.9 max. Ø4 2.54 + 0.6 - 0.1 ± 0.2 5.08 ± 0.7 12.7 ± 0.2 19314 6.35 ± 0.7 Measure limit over 20 index-holes: ± 1 Fig. 10 - ∅ 5 mm Devices on Tape AMMOPACK The tape is folded in a concertina arrangement and laid in cardboard box. If components are required with cathode before the anode (figure 12), then start of tape should be taken from the side of the box marked “-”. If components are required with anode before cathode, then tape should be taken from the side of the box marked “+”. Label Tape feed direction code 12 Diodes: cathode before anode Transistors: collector before emitter Tape feed direction code 21 Diodes: anode before cathode Transistors: emitter before collector C A B 94 8667 Fig. 11 - Tape Direction www.vishay.com 98 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81008 Rev. 1.9, 04-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1