TSAL7300_09

TSAL7300 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° 94 8389 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors DESCRIPTION TSAL7300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted plastic package. • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Infrared remote control units with high power requirements • Free air transmission systems • Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT TSAL7300 Ie (mW/sr) 45 ϕ (deg) ± 22 λP (nm) 940 tr (ns) 800 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSAL7300 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1.5 160 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W Document Number: 81013 Rev. 1.6, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSAL7300 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 180 120 100 80 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21212 IF - Forward Current (mA) RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 230 K/W 21211 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1 A IF = 100 mA IF = 1 A Method: 63 % encircled energy TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 20 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tr tf tf d 30 260 25 45 350 35 - 0.6 ± 22 940 50 0.2 800 500 800 500 2.3 150 MIN. TYP. 1.35 2.6 - 1.8 10 MAX. 1.6 3 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81013 Rev. 1.6, 29-Jun-09 TSAL7300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 1 I F - Forward Current (A) Φ e - Radiant Power (mW) 10 2 1000 I FSM = 1 A (Single Pulse) t p/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 10 -2 100 10 1 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 0.1 10 0 13602 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Power vs. Forward Current 104 IF - Forward Current (mA) 1.6 103 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 102 tP = 100 µs tP/T = 0.001 101 0.4 100 0 13600 1 2 3 4 0 - 10 0 10 94 7993 50 100 140 VF - Forward Voltage (V) T amb - Ambient Temperature (°C) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 I e - Radiant Intensity (mW/sr) Φ rel - Relative Radiant Power e 1.25 100 1.0 0.75 10 0.5 1 0.25 IF = 100 mA 0 890 940 990 0.1 100 14327 101 102 103 I F - Forward Current (mA) 104 14291 λ - Wavelength (nm) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength Document Number: 81013 Rev. 1.6, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSAL7300 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 0° 10° 20° 30° Ie rel - Relative Radiant Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 94 8883 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A C ϕ - Angular Displacement 7.7 ± 0.15 Ø 5.8 ± 0.15 R2.49 (sphere) 8.7 ± 0.3 (3.6) 34.4 ± 0.55 < 0.7 Area not plane Ø 5 ± 0.15 + 0.2 0.6 - 0.1 1 min. + 0.15 0.5 - 0.05 2.54 nom. + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 6.544-5259.05-4 Issue: 8; 19.05.09 96 12126 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81013 Rev. 1.6, 29-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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