TSFF5400

TSFF5400 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm (T–1¾) Package Description TSFF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. 94 8390 Features D D D D D D D D D High modulation bandwidth (35 MHz) Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 22° Peak wavelength lp = 870 nm High reliability Good spectral matching to Si photodetectors Applications IInfrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 300 1 250 100 –25...+85 –25...+85 260 300 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from case Document Number 81016 Rev. 5, 29-Jun-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSFF5400 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Cut–Off Frequency Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Symbol VF VF TKVF IR Cj Ie Ie TKfe ϕ Min Typ 1.45 2.5 –2.4 160 60 600 40 –0.5 ±22 870 40 0.2 10 10 35 Max 1.6 3.0 10 35 350 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz fe TKlp tr tf fc lp Dl Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV – Power Dissipation ( mW ) 200 IF – Forward Current ( mA ) 250 200 150 RthJA 100 150 100 RthJA 50 0 0 20 40 60 80 100 50 0 0 20 40 60 80 100 16111 Tamb – Ambient Temperature ( °C ) 16112 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 81016 Rev. 5, 29-Jun-99 TSFF5400 Vishay Telefunken 1000 I F – Forward Current ( A ) tp / T = 0.01 0.02 0.05 0.1 Tamb < 50° 1000.0 I e – Radiant Intensity ( mW/sr ) 100.0 10.0 0.2 0.5 100 0.01 1.0 0.1 0.10 1.00 10.00 100.00 16032 1 10 100 1000 16031 tp – Pulse Duration ( ms ) IF – Forward Current ( mA ) Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current 1000.0 1000.0 I F – Forward Current ( mA ) Fe – Radiant Power ( mW ) 100.0 100.0 10.0 10.0 1.0 1.0 0.1 0 16030 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 16033 1 10 100 1000 VF – Forward Voltage ( V ) IF – Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage Figure 7. Radiant Power vs. Forward Current 1.2 V Frel – Relative Forward Voltage VFrel – Relative Forward Voltage 1.1 IF = 10 mA 1.0 0.9 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 20 40 60 80 100 16034 IF = 20 mA 0.8 0.7 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 94 7990 e Tamb – Ambient Temperature ( °C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature Document Number 81016 Rev. 5, 29-Jun-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) TSFF5400 Vishay Telefunken 1.25 1 0 Attenuation ( dB ) –1 –2 –3 –4 –5 10 14256 Fe – Radiant Power ( mW ) 1.0 0.75 0.5 0.25 0 780 IFDC=70mA IFAC=30mA pp 95 9886 l – Wavelength ( nm ) 0° 10 ° 20 ° 30° 880 980 100 1000 10000 100000 f – Frequency ( kHz ) Figure 9. Relative Radiant Power vs. Wavelength Figure 11. Attenuation vs. Frequency I e rel – Relative Radiant Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8883 Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 81016 Rev. 5, 29-Jun-99 TSFF5400 Vishay Telefunken Dimensions in mm 96 12122 Document Number 81016 Rev. 5, 29-Jun-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) TSFF5400 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 81016 Rev. 5, 29-Jun-99