TSFF5510_09

TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 38° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 21061 DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high data transmission rates PRODUCT SUMMARY COMPONENT TSFF5510 Ie (mW/sr) 32 ϕ (deg) ± 38 λp (nm) 870 tr (ns) 15 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSFF5510 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 µs tp = 100 µs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm soldered on PCB Document Number: 81835 Rev. 1.2, 25-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 450 mA, tp = 100 µs IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF VF TKVF IR Cj Ie φe TKφe ϕ λp Δλ TKλp tr tf fc 16 110 32 55 - 0.35 ± 38 870 55 0.25 15 15 24 48 MIN. 1.3 1.5 TYP. 1.45 1.75 2.1 - 1.8 10 MAX. 1.7 2.1 UNIT V V V mV/K µA pF mW/sr mW %/K deg nm nm nm/K ns ns MHz www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81835 Rev. 1.2, 25-Jun-09 TSFF5510 High Speed Infrared Emitting Diode, Vishay Semiconductors 870 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 1000 tP/T = 0.01 0.02 Tamb < 50 °C IF - Forward Current (mA) φe - Radiant Power (mW) 0.05 0.1 100 10 0.2 0.5 100 0.01 1 tP = 100 µs tP/T = 0.002 0.1 0.1 1 10 100 21062 1 10 100 1000 16031 tP - Pulse Duration (ms) IF - Forward Current (mA) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Power vs. Forward Current 10 1.25 Φe, rel - Relative Radiant Power IF - Forward Current (A) 1.00 1 0.75 0.1 0.50 0.01 0.25 0.001 0 21009 0.5 1 1.5 2 2.5 3 3.5 4 21011 0 750 790 830 870 910 950 VF - Forward Voltage (V) λ - Wavelength (nm) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Power vs. Wavelength 1000 1.1 Ie, rel - Relative Radiant Intensity 1000 21012 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 90 - 70 - 50 - 30 - 10 0 10 30 50 70 90 Ie - Radiant Intensity (mW/sr) 100 10 1 tP = 100 µs tP/T = 0.002 0.1 1 21010 10 100 IF - Forward Current (mA) Angle (°) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81835 Rev. 1.2, 25-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters Ø 5.9 ± 0.15 A C 3.8 ± 0.15 4.4 ± 0.3 9.5 ± 0.3 (1.72) SR2.35 Area not plane Ø 4.8 ± 0.15 31.4 ± 0.55 1.1 ± 0.25 1 min. + 0.15 0.5 - 0.05 2.54 nom. + 0.15 0.5 - 0.05 technical drawings according to DIN specifications Drawing-No.: 6.544-5390.01-4 Issue: 2; 19.05.09 20796 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81835 Rev. 1.2, 25-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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