TSHA4400_08

TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20° • Low forward voltage 94 8636 • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION The TSHA440. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT TSHA4400 TSHA4401 Ie (mW/sr) 20 30 ϕ (deg) ± 20 ± 20 λP (nm) 875 875 tr (ns) 600 600 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHA4400 TSHA4401 Note MOQ: minimum order quantity PACKAGING Bulk Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 2 180 100 - 40 to + 85 - 40 to + 100 260 300 UNIT V mA mA A mW °C °C °C °C K/W Document Number: 81017 Rev. 1.6, 16-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 147 TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 200 180 120 100 80 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 300 K/W IF - Forward Current (mA) 160 RthJA = 300 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21311 Tamb - Ambient Temperature (°C) 21312 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 µs IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA SYMBOL VF VF TKVF IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d 20 - 0.7 ± 20 875 80 0.2 600 300 600 300 1.8 MIN. TYP. 1.5 3.2 - 1.6 100 MAX. 1.8 4.9 UNIT V V mV/K µA pF %/K deg nm nm nm/K ns ns ns ns mm TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 mA, tp = 100 µs Radiant power IF = 100 mA, tp = 20 ms PART TSHA4400 TSHA4401 TSHA4400 TSHA4401 TSHA4400 TSHA4401 SYMBOL Ie Ie Ie Ie φe φe MIN. 12 16 140 190 TYP. 20 30 240 360 20 24 MAX. 60 60 UNIT mW/sr mW/sr mW/sr mW/sr mW mW Note Tamb = 25 °C, unless otherwise specified www.vishay.com 148 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81017 Rev. 1.6, 16-Sep-08 TSHA4400, TSHA4401 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 1 Ie - Radiant Intensity (mW/sr) 1000 TSHA 4401 100 TSHA 4400 10 IF - Forward Current (A) t p /T = 0.01, I FM = 2 A 0.02 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 7942 10 0 94 7947 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Intensity vs. Forward Current 10 4 Φ e - Radiant Power (mW) 2 3 4 1000 IF - Forward Current (mA) 10 3 tp = 100 µs tp/T= 0.001 100 10 10 2 1 10 1 94 8005 0.1 0 1 10 0 94 7943 V F - Forward Voltage (V) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.2 VF rel - Relative Forward Voltage (V) 1.1 IF = 10 mA 1.0 0.9 1.6 1.2 I e rel; Φe rel I F = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 8020 0 - 10 0 10 50 100 140 94 7990 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81017 Rev. 1.6, 16-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 149 TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 1.25 Φ e - Relative Radiant Power 1.25 Φe rel - Relative Radiant Power 1.0 1.0 0.75 0.5 0.75 0.5 0.25 0 780 0.25 IF = 100 mA 0 900 950 1000 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 880 λ - Wavelenght (nm) 980 94 8000 94 7994 λ - Wavelength (nm) Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C A ± 0.15 3.2 R 1.4 (sphere) ± 0.3 ± 0.1 4.5 3.5 (2.5) < 0.6 ± 0.5 30.3 5.8 ± 0.3 Area not plane 2.9 ± 0.1 ± 0.25 0.4 0.6 ± 0.15 + 0.15 - 0.05 1.5 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5264.01-4 Issue: 2; 23.04.98 95 10951 www.vishay.com 150 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81017 Rev. 1.6, 16-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1