TSHA5200_08

TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 12° 94 8390 • Low forward voltage • Suitable for high pulse current operation • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS • Infrared remote control and free air data transmission systems • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT TSHA5200 TSHA5201 TSHA5202 TSHA5203 Ie (mW/sr) 40 50 60 65 ϕ (deg) ± 12 ± 12 ± 12 ± 12 λP (nm) 875 875 875 875 tr (ns) 600 600 600 600 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHA5200 TSHA5201 TSHA5202 TSHA5203 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ T-1¾ T-1¾ T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 2.5 180 UNIT V mA mA A mW Document Number: 81019 Rev. 1.7, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 151 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs ABSOLUTE MAXIMUM RATINGS PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 230 UNIT °C °C °C °C K/W 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d 20 - 0.7 ± 12 875 80 0.2 600 300 600 300 3.7 MIN. TYP. 1.5 - 1.6 100 MAX. 1.8 UNIT V mV/K µA pF %/K deg nm nm nm/K ns ns ns ns mm www.vishay.com 152 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81019 Rev. 1.7, 05-Sep-08 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART TSHA5200 Forward voltage IF = 1.5 A, tp = 100 µs TSHA5201 TSHA5202 TSHA5203 TSHA5200 IF = 100 mA, tp = 20 µs Radiant intensity IF = 1.5 A, tp = 100 µs TSHA5201 TSHA5202 TSHA5203 TSHA5200 TSHA5201 TSHA5202 TSHA5203 TSHA5200 Radiant power IF = 100 mA, tp = 20 µs TSHA5201 TSHA5202 TSHA5203 Note Tamb = 25 °C, unless otherwise specified SYMBOL VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie φe φe φe φe 25 30 36 50 300 400 500 600 MIN. TYP. 3.2 3.2 3.2 3.2 40 50 60 65 500 600 700 800 22 23 24 25 MAX. 4.9 4.9 4.5 4.5 125 125 125 125 UNIT V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 1 10 4 I FSM = 2.5 A (Single Pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 IF - Forward Current (mA) IF - Forward Current (A) 10 3 tp = 100 µs tp/T= 0.001 10 2 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 8005 0 1 2 3 4 94 8003 V F - Forward Voltage (V) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Document Number: 81019 Rev. 1.7, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 153 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs 1.2 VF rel - Relative Forward Voltage (V) 1.1 IF = 10 mA 1.0 0.9 1.6 1.2 I e rel; Φe rel I F = 20 mA 0.8 0.8 0.7 0 20 40 60 80 100 0.4 0 - 10 0 10 94 8020 50 100 140 94 7990 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 TSHA 5203 I e - Radiant Intensity (mW/sr) TSHA 5202 100 TSHA 5201 10 TSHA 5200 1 10 0 94 8006 1.25 Φ e - Relative Radiant Power 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 880 λ - Wavelenght (nm) 980 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 8000 Fig. 6 - Radiant Intensity vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° Ie rel - Relative Radiant Intensity Φe - Radiant Power (mW) 100 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 10 1 0.1 10 0 94 8007 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 8008 0.6 0.4 0.2 0 Fig. 7 - Radiant Power vs. Forward Current Fig. 10 - Relative Radiant Intensity vs. Angular Displacement www.vishay.com 154 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81019 Rev. 1.7, 05-Sep-08 ϕ - Angular Displacement TSHA5200, TSHA5201, TSHA5202, TSHA5203 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs PACKAGE DIMENSIONS in millimeters 9612121 Document Number: 81019 Rev. 1.7, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 155 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1