TSHA5200_09

TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 875 nm High reliability Angle of half intensity: ϕ = ± 12° Low forward voltage Suitable for high pulse current operation Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8390 in DESCRIPTION The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS • Infrared remote control and free air data transmission systems • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT TSHA5200 TSHA5201 TSHA5202 Ie (mW/sr) 40 50 60 ϕ (deg) ± 12 ± 12 ± 12 ± 12 λP (nm) 875 875 875 875 tr (ns) 600 600 600 600 TSHA5203 65 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHA5200 TSHA5201 TSHA5202 TSHA5203 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ T-1¾ T-1¾ T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81019 Rev. 1.9, 29-Jun-09 t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 2.5 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1 A IF = 100 mA IF = 1 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d 20 - 0.7 ± 12 875 80 0.2 600 300 600 300 3.7 MIN. TYP. 1.5 - 1.6 100 MAX. 1.8 UNIT V mV/K µA pF %/K deg nm nm nm/K ns ns ns ns mm www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81019 Rev. 1.9, 29-Jun-09 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Infrared Emitting Diode, 875 nm, GaAlAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART TSHA5200 Forward voltage IF = 1 A, tp = 100 µs TSHA5201 TSHA5202 TSHA5203 TSHA5200 IF = 100 mA, tp = 20 µs Radiant intensity IF = 1 A, tp = 100 µs TSHA5201 TSHA5202 TSHA5203 TSHA5200 TSHA5201 TSHA5202 TSHA5203 TSHA5200 Radiant power IF = 100 mA, tp = 20 µs TSHA5201 TSHA5202 TSHA5203 Note Tamb = 25 °C, unless otherwise specified SYMBOL VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie φe φe φe φe 25 30 36 50 200 260 330 400 MIN. TYP. 2.8 2.8 2.8 2.8 40 50 60 65 330 400 460 530 22 23 24 25 MAX. 3.5 3.5 3.5 3.5 125 125 125 125 UNIT V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified VF rel - Relative Forward Voltage (V) 10 1 1.2 1.1 IF = 10 mA 1.0 0.9 IF - Forward Current (A) I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 0.8 0.7 0 20 40 60 80 100 94 8003 94 7990 Tamb - Ambient Temperature (°C) Fig. 3 - Pulse Forward Current vs. Pulse Duration 10 4 Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 1000 TSHA 5203 I e - Radiant Intensity (mW/sr) TSHA 5202 100 TSHA 5201 10 TSHA 5200 1 IF - Forward Current (mA) 10 3 tp = 100 µs tp/T= 0.001 10 2 10 1 94 8005 0 1 2 3 4 94 8006 10 0 V F - Forward Voltage (V) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 4 - Forward Current vs. Forward Voltage Fig. 6 - Radiant Intensity vs. Forward Current Document Number: 81019 Rev. 1.9, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 1.25 Φ e - Relative Radiant Power 1000 Φe - Radiant Power (mW) 1.0 100 0.75 0.5 10 1 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 880 λ - Wavelenght (nm) 980 0.1 10 0 94 8007 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 8000 Fig. 7 - Radiant Power vs. Forward Current 1.6 Fig. 9 - Relative Radiant Power vs. Wavelength 0° 10° 20° 30° Ie rel - Relative Radiant Intensity 1.2 I e rel; Φe rel I F = 20 mA 0.8 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.4 0 - 10 0 10 94 8020 50 100 140 94 8008 0.6 0.4 0.2 0 Tamb - Ambient Temperature (°C) Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A C R 2.49 (sphere) ± 0.15 8.7 ± 0.3 7.7 ± 0.15 ± 0.3 (5.1) Ø 5.8 12.9 < 0.7 35.9 ± 0.55 Area not plane 1.1 ± 0.25 Ø5 ± 0.15 1 min. technical drawings according to DIN specifications 0.5 Drawing-No.: 6.544-5258.04-4 Issue: 8; 19.05.09 96 12121 + 0.15 - 0.05 0.5 2.54 nom. + 0.15 - 0.05 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81019 Rev. 1.9, 29-Jun-09 ϕ - Angular Displacement Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1