TSHA5500_08

TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage 94 8390 • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION The TSHA550. series are infrared, 875 nm emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT TSHA5500 TSHA5501 TSHA5502 TSHA5503 Ie (mW/sr) 20 25 30 35 ϕ (deg) ± 24 ± 24 ± 24 ± 24 λP (nm) 875 875 875 875 tr (ns) 600 600 600 600 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHA5500 TSHA5501 TSHA5502 TSHA5503 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ T-1¾ T-1¾ T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 2.5 180 UNIT V mA mA A mW www.vishay.com 156 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81020 Rev. 1.5, 05-Sep-08 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs ABSOLUTE MAXIMUM RATINGS PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 230 UNIT °C °C °C °C K/W 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d 20 - 0.7 ± 24 875 80 0.2 600 300 600 300 2.2 MIN. TYP. 1.5 - 1.6 100 MAX. 1.8 UNIT V mV/K µA pF %/K deg nm nm nm/K ns ns ns ns mm Document Number: 81020 Rev. 1.5, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 157 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART TSHA5500 Forward voltage IF = 1.5 A, tp = 100 µs TSHA5501 TSHA5502 TSHA5203 TSHA5500 IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 µs TSHA5501 TSHA5502 TSHA5503 TSHA5500 TSHA5501 TSHA5502 TSHA5503 TSHA5500 Radiant power IF = 100 mA, tp = 20 ms TSHA5501 TSHA5502 TSHA5503 Note Tamb = 25 °C, unless otherwise specified SYMBOL VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie φe φe φe φe 12 16 20 24 150 200 250 300 MIN. TYP. 3.2 3.2 3.2 3.2 20 25 30 35 240 300 360 420 22 23 24 25 MAX. 4.9 4.9 4.5 4.5 60 60 60 60 UNIT V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 1 10 4 I FSM = 2.5 A (Single Pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 IF - Forward Current (mA) IF - Forward Current (A) 10 3 tp = 100 µs tp/T= 0.001 10 2 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 8005 0 1 2 3 4 94 8003 V F - Forward Voltage (V) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage www.vishay.com 158 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81020 Rev. 1.5, 05-Sep-08 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs 1.2 VF rel - Relative Forward Voltage (V) 1.1 IF = 10 mA 1.0 0.9 1.6 1.2 I e rel; Φe rel I F = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 8020 0 - 10 0 10 50 100 140 94 7990 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 I e - Radiant Intensity (mW/sr) Φ e - Relative Radiant Power 1.25 TSHA 5503 TSHA 5502 1.0 100 0.75 0.5 TSHA 5501 10 TSHA 5500 1 10 0 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 880 λ - Wavelenght (nm) 980 94 8014 e 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 8000 Fig. 6 - Radiant Intensity vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength 0° 10° 20° 30° 1000 I e rel - Relative Radiant Intensity Φe - Radiant Power (mW) 100 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 10 1 0.1 10 0 94 8015 e 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 8016 e 0.6 0.4 0.2 0 0.2 0.4 0.6 Fig. 7 - Radiant Power vs. Forward Current Fig. 10 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81020 Rev. 1.5, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 159 TSHA5500, TSHA5501, TSHA5502, TSHA5503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs PACKAGE DIMENSIONS in millimeters A C 5.8 ± 0.15 R 2.49 (sphere) 7.7 ± 0.15 ± 0.3 ± 0.3 (4.4) ± 0.55 12.2 < 0.7 8.7 Area not plane 35.2 1.2 + 0.2 - 0.1 5 ± 0.15 ± 0.25 1.5 0.5 - 0.05 0.5 + 0.15 - 0.05 + 0.15 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.08-4 Issue: 3; 08.11.99 14435 www.vishay.com 160 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81020 Rev. 1.5, 05-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1