TSHA5500_09

TSHA5500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° 94 8390 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in DESCRIPTION The TSHA5500 is an infrared, 875 nm emitting diode in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) ± 24 λP (nm) 875 tr (ns) 600 TSHA5500 30 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHA5500 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81020 Rev. 1.8, 08-Oct-09 t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 2.5 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSHA5500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 230 K/W IF - Forward Current (mA) 160 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1 A IF = 100 mA IF = 1 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 20 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tr tf tf d 16 128 20 30 240 24 - 0.7 ± 24 875 80 0.2 600 300 600 300 2.2 48 MIN. TYP. 1.5 2.8 - 1.6 100 MAX. 1.8 3.5 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns mm www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81020 Rev. 1.8, 08-Oct-09 TSHA5500 Infrared Emitting Diode, 875 nm, GaAlAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Vishay Semiconductors 10 1 Ie - Radiant Intensity (mW/sr) 1000 IF - Forward Current (A) I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 100 10 TSHA 5500 1 10 0 10 1 10 2 10 3 10 4 94 8003 948014-1 IF - Forward Current (mA) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Intensity vs. Forward Current 10 4 Φe - Radiant Power (mW) 2 3 4 1000 IF - Forward Current (mA) 10 3 tp = 100 µs tp/T= 0.001 100 10 10 2 1 10 1 94 8005 0.1 0 1 10 0 94 8015 e V F - Forward Voltage (V) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Radiant Power vs. Forward Current 1.2 VF rel - Relative Forward Voltage (V) 1.1 IF = 10 mA 1.0 0.9 1.6 1.2 I e rel; Φe rel I F = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 8020 0 - 10 0 10 50 100 140 94 7990 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Document Number: 81020 Rev. 1.8, 08-Oct-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSHA5500 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 1.25 1.0 I e rel - Relative Radiant Intensity Φ e - Relative Radiant Power 0° 10° 20° 30° 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 880 λ - Wavelenght (nm) 980 0.6 94 8016 e 0.4 0.2 0 0.2 0.4 0.6 94 8000 Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A C Ø 5.8 ± 0.15 R 2.49 (sphere) 7.7 ± 0.15 12.2 ± 0.3 8.7 ± 0.3 (4.4) 35.2 ± 0.55 < 0.7 Area not plane 1.1 ± 0.25 Ø 5 ± 0.15 1 min. technical drawings according to DIN specifications 0.5 0.5 + 0.15 - 0.05 + 0.15 - 0.05 2.54 nom. 6.544-5258.08-4 Issue: 4; 19.05.09 14435 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81020 Rev. 1.8, 08-Oct-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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