TSHA6200, TSHA6201, TSHA6202, TSHA6203
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
FEATURES
• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 12° • Low forward voltage • Suitable for high pulse current operation
94 8389
• Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
The TSHA620. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.
APPLICATIONS
• Infrared remote control and free air data transmission systems • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT TSHA6200 TSHA6201 TSHA6202 TSHA6203 Ie (mW/sr) 40 50 60 65 ϕ (deg) ± 12 ± 12 ± 12 ± 12 λP (nm) 875 875 875 875 tr (ns) 600 600 600 600
Note Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE TSHA6200 TSHA6201 TSHA6202 TSHA6203 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ T-1¾ T-1¾ T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 2.5 180 UNIT V mA mA A mW
Document Number: 81021 Rev. 1.6, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 161
TSHA6200, TSHA6201, TSHA6202, TSHA6203
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
ABSOLUTE MAXIMUM RATINGS
PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 230 UNIT °C °C °C °C K/W
200 180
120 100 80 RthJA = 230 K/W 60 40 20 0
0 10 20 30 40 50 60 70 80 90 100
21143
PV - Power Dissipation (mW)
140 120 100 80 60 40 20 0 RthJA = 230 K/W
IF - Forward Current (mA)
160
0
10
20 30 40
50 60 70 80
90 100
21142
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d 20 - 0.7 ± 12 875 80 0.2 600 300 600 300 3.7 MIN. TYP. 1.5 - 1.6 100 MAX. 1.8 UNIT V mV/K µA pF %/K deg nm nm nm/K ns ns ns ns mm
www.vishay.com 162
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81021 Rev. 1.6, 05-Sep-08
TSHA6200, TSHA6201, TSHA6202, TSHA6203
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART TSHA6200 Forward voltage IF = 1.5 A, tp = 100 µs TSHA6201 TSHA6202 TSHA6203 TSHA6200 IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 µs TSHA6201 TSHA6202 TSHA6203 TSHA6200 TSHA6201 TSHA6202 TSHA6203 TSHA6200 Radiant power IF = 100 mA, tp = 20 ms TSHA6201 TSHA6202 TSHA6203 Note Tamb = 25 °C, unless otherwise specified SYMBOL VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie φe φe φe φe 25 30 36 50 300 400 500 600 MIN. TYP. 3.2 3.2 3.2 3.2 40 50 60 65 500 600 700 800 22 23 24 25 MAX. 4.9 4.9 4.5 4.5 125 125 125 125 UNIT V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
10 1
10 4
I FSM = 2.5 A (Single Pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2
IF - Forward Current (mA)
IF - Forward Current (A)
10 3
tp = 100 µs tp/T= 0.001
10 2
10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2
94 8005
0
1
2
3
4
94 8003
V F - Forward Voltage (V)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Document Number: 81021 Rev. 1.6, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 163
TSHA6200, TSHA6201, TSHA6202, TSHA6203
Vishay Semiconductors
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
1.2 VF rel - Relative Forward Voltage (V) 1.1 IF = 10 mA 1.0 0.9
1.6
1.2 I e rel; Φe rel I F = 20 mA 0.8
0.4
0.8 0.7 0 20 40 60 80 100
94 8020
0 - 10 0 10
50
100
140
94 7990
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000 TSHA 6203 I e - Radiant Intensity (mw/sr) TSHA 6202 100 TSHA 6201 10 TSHA 6200 1 100
94 8745
1.25
Φ e - Relative Radiant Power
1.0
0.75 0.5
0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 880 λ - Wavelenght (nm) 980
101 10 2 10 3 I F - Forward Current (mA)
10 4
94 8000
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 9 - Relative Radiant Power vs. Wavelength
1000
0°
10°
20° 30°
Ie rel - Relative Radiant Intensity
Φe - Radiant Power (mW)
100
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80°
10
1
0.1 10 0
94 8007
10 1 10 2 10 3 I F - Forward Current (mA)
10 4
94 8008
0.6
0.4
0.2
0
Fig. 7 - Radiant Power vs. Forward Current
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
www.vishay.com 164
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81021 Rev. 1.6, 05-Sep-08
ϕ - Angular Displacement
TSHA6200, TSHA6201, TSHA6202, TSHA6203
Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 875 nm, GaAlAs
PACKAGE DIMENSIONS in millimeters
96 12125
Document Number: 81021 Rev. 1.6, 05-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 165
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1
