TSHA6200_09

TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Peak wavelength: λp = 875 nm High reliability Angle of half intensity: ϕ = ± 12° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8389 in DESCRIPTION The TSHA620. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. APPLICATIONS • Infrared remote control and free air data transmission systems • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass PRODUCT SUMMARY COMPONENT TSHA6200 TSHA6201 TSHA6202 Ie (mW/sr) 40 50 60 ϕ (deg) ± 12 ± 12 ± 12 ± 12 λP (nm) 875 875 875 875 tr (ns) 600 600 600 600 TSHA6203 65 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TSHA6200 TSHA6201 TSHA6202 TSHA6203 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ T-1¾ T-1¾ T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81021 Rev. 1.8, 25-Jun-09 t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 2.5 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 200 180 120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21143 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 230 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21142 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1 A IF = 100 mA IF = 1 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d 20 - 0.7 ± 12 875 80 0.2 600 300 600 300 3.7 MIN. TYP. 1.5 - 1.6 100 MAX. 1.8 UNIT V mV/K µA pF %/K deg nm nm nm/K ns ns ns ns mm www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81021 Rev. 1.8, 25-Jun-09 TSHA6200, TSHA6201, TSHA6202, TSHA6203 Infrared Emitting Diode, 875 nm, GaAlAs TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART TSHA6200 Forward voltage IF = 1 A, tp = 100 µs TSHA6201 TSHA6202 TSHA6203 TSHA6200 IF = 100 mA, tp = 20 ms Radiant intensity IF = 1 A, tp = 100 µs TSHA6201 TSHA6202 TSHA6203 TSHA6200 TSHA6201 TSHA6202 TSHA6203 TSHA6200 Radiant power IF = 100 mA, tp = 20 ms TSHA6201 TSHA6202 TSHA6203 Note Tamb = 25 °C, unless otherwise specified SYMBOL VF VF VF VF Ie Ie Ie Ie Ie Ie Ie Ie φe φe φe φe 25 30 36 50 200 260 330 400 MIN. TYP. 2.8 2.8 2.8 2.8 40 50 60 65 330 400 460 530 22 23 24 25 MAX. 3.5 3.5 3.5 3.5 125 125 125 125 UNIT V V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW mW Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 1 10 4 IF - Forward Current (A) I FSM = 2.5 A (single pause) t p /T= 0.01 10 0 0.05 0.1 0.2 0.5 10 -1 10 -2 IF - Forward Current (mA) 10 3 tp = 100 µs tp/T= 0.001 10 2 10 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 8005 0 1 2 3 4 94 8003 V F - Forward Voltage (V) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Document Number: 81021 Rev. 1.8, 25-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs 1.2 VF rel - Relative Forward Voltage (V) 1.6 1.1 IF = 10 mA 1.0 0.9 I e rel; Φe rel 1.2 I F = 20 mA 0.8 0.4 0.8 0.7 0 20 40 60 80 100 94 8020 0 - 10 0 10 50 100 140 94 7990 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 5 - Relative Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 TSHA 6203 I e - Radiant Intensity (mw/sr) TSHA 6202 100 TSHA 6201 10 TSHA 6200 1 100 94 8745 1.25 Φ e - Relative Radiant Power 1.0 0.75 0.5 0.25 I F = 100 mA Φ e ( λ ) rel = Φ e ( λ ) / Φ e ( λ p ) 0 780 880 λ - Wavelenght (nm) 980 101 10 2 10 3 I F - Forward Current (mA) 10 4 94 8000 Fig. 6 - Radiant Intensity vs. Forward Current Fig. 9 - Relative Radiant Power vs. Wavelength 1000 0° 10° 20° 30° Ie rel - Relative Radiant Intensity Φe - Radiant Power (mW) 100 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 10 1 0.1 10 0 94 8007 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 8008 0.6 0.4 0.2 0 Fig. 7 - Radiant Power vs. Forward Current Fig. 10 - Relative Radiant Intensity vs. Angular Displacement www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81021 Rev. 1.8, 25-Jun-09 ϕ - Angular Displacement TSHA6200, TSHA6201, TSHA6202, TSHA6203 Infrared Emitting Diode, 875 nm, GaAlAs PACKAGE DIMENSIONS in millimeters Vishay Semiconductors A C 7.7 ± 0.15 Ø 5.8 ± 0.15 R2.49 (sphere) 8.7 ± 0.3 (5.1) < 0.7 35.9 ± 0.55 Area not plane Ø 5 ± 0.15 + 0.2 0.6 - 0.1 1 min. + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.04-4 Issue: 8; 19.05.09 96 12125 Document Number: 81021 Rev. 1.8, 25-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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