TSHF5400

TSHF5400 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm (T–1¾) Package Description TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. 94 8390 Features D D D D D D D D D High modulation bandwidth (10 MHz) Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 22° Peak wavelength lp = 870 nm High reliability Good spectral matching to Si photodetectors Applications Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5400 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz). Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 160 100 –40...+100 –40...+100 260 270 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from case Document Number 81024 Rev. 7, 02-Aug-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSHF5400 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Virtual Source Diameter Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA method: 63% encircled energy Symbol VF VF TKVF IR Cj Ie Ie TKfe ϕ Min Typ 1.35 2.4 –1.7 160 40 400 35 –0.7 ±22 870 40 0.2 30 30 2.2 Max 1.6 3.0 10 25 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns mm fe TKlp tr tf ø lp Dl www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 81024 Rev. 7, 02-Aug-99 TSHF5400 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 180 PV – Power Dissipation ( mW ) 160 140 120 100 80 60 40 20 0 0 16084 104 IF – Forward Current ( mA ) 103 102 101 100 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 94 8880 0 1 2 3 4 VF – Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 120 IF – Forward Current ( mA ) 100 80 60 40 20 0 0 16085 Figure 4. Forward Current vs. Forward Voltage 1.2 V Frel – Relative Forward Voltage 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 94 7990 e 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 1000 I e – Radiant Intensity ( mW/sr ) 101 I F – Forward Current ( A ) Tamb