TSHF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
FEATURES
• Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Leads with stand-off • Peak wavelength: λp = 890 nm • High reliability • High radiant power
94 8390
• High radiant intensity • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation
DESCRIPTION
TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
• High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
APPLICATIONS
• Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz)
PRODUCT SUMMARY
COMPONENT TSHF5410 Ie (mW/sr) 70 ϕ (deg) ± 22 λP (nm) 890 tr (ns) 30
Note Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE TSHF5410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 1.5 160 UNIT V mA mA A mW
Document Number: 81303 Rev. 1.2, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
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TSHF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
ABSOLUTE MAXIMUM RATINGS
PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 230 UNIT °C °C °C °C K/W
180
120 100 80
PV - Power Dissipation (mW)
160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100
21212
IF - Forward Current (mA)
RthJA = 230 K/W
60 40 20 0 0 10 20 30 40 50 60 70 80 90 100
RthJA = 230 K/W
21211
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc d 45 125 70 700 50 - 0.35 ± 22 890 40 0.25 30 30 12 2.1 135 MIN. TYP. 1.4 2.3 - 1.8 10 MAX. 1.6 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81303 Rev. 1.2, 04-Sep-08
TSHF5410
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Vishay Semiconductors
1000
tP/T = 0.01 0.02
Tamb < 50 °C
1000
IF - Forward Current (mA)
Radiant Power (mW)
e-
0.05 0.1
100
10
0.2 0.5
1
100 0.01
16031
0.1 0.1 1.0 10 100
16971
1
10
100
1000
tP - Pulse Duration (ms)
IF - Forward Current (mA)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
1000 Φe rel - Relative Radiant Power 4
1.25
IF - Forward Current (mA)
1.0
100 tP = 100 µs tP/T = 0.001 10
0.75
0.5
0.25
1 0
18873
1 3 2 VF - Forward Voltage (V)
0 800
20082
900
1000
λ - Wavelength (nm)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
10°
20° 30°
1000 Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr)
100
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0
10
1
0.1 1
18220
10 100 IF - Forward Current (mA)
1000
94 8883
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81303 Rev. 1.2, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 181
ϕ - Angular Displacement
TSHF5410
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters
A
C
5.8
± 0.15
R 2.49 (sphere)
± 0.3
± 0.3
± 0.15
(3.5)
11.3
< 0.7
8.7
7.7
34.3
± 0.55
Area not plane
1.2
+ 0.2 - 0.1
Ø5
± 0.25
± 0.15
1.5
0.5 0.5
+ 0.15 - 0.05
+ 0.15 - 0.05
technical drawings according to DIN specifications
2.54 nom.
6.544-5258.06-4 Issue: 2; 08.11.99
95 11260
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81303 Rev. 1.2, 04-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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