TSHG6200_07

TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted, plastic package. 94 8389 Features • • • • • • • • • • • Peak wavelength: λp = 850 nm High reliability High radiant power e2 High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth Good spectral matching to Si photodetectors Standard package: T-1¾ (∅ 5 mm) Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Infrared radiation source for operation with CMOS cameras • High speed IR data transmission Parts Table Part TSHG6200 Remarks MOQ: 4000 pcs Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t ≤ 5 s, 2 mm from case tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 270 Unit V mA mA A mW °C °C °C °C K/W Document Number 81078 Rev. 1.6, 04-Dec-07 www.vishay.com 1 TSHG6200 Vishay Semiconductors 200 PV - Power Dissipation (mW) - RthJA = 270 K/W 150 IF - Forward Current (mA) 125 100 - RthJA = 270 K/W 75 50 25 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 20113 100 50 0 20112 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature Figure 2. Forward Current Limit vs. Ambient Temperature Basic Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Temp. coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temp. coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temp. coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc ∅ 80 125 160 1600 50 - 0.35 ± 10 850 40 0.25 20 13 20 3.7 400 Min Typ. 1.5 2.3 - 1.8 10 Max 1.8 Unit V V mV/K μA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm www.vishay.com 2 Document Number 81078 Rev. 1.6, 04-Dec-07 TSHG6200 Vishay Semiconductors 1000 tP/T = 0.01 0.02 Tamb < 50° 1000 IF - Forward Current (mA) Radiant Power (mW) e- 0.05 0.1 100 10 0.2 0.5 1 100 0.01 16031 0.1 0.1 1.0 10 100 16971 1 10 100 1000 tP - Pulse Duration (ms) IF - Forward Current (mA) Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Power vs. Forward Current 1000 - Relative Radiant Power e, rel 1.25 1.0 IF - Forward Current (mA) 100 tP = 100 µs tP/T = 0.001 10 0.75 0.5 0.25 0 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 16972 800 850 900 - Wavelength (nm) Figure 4. Forward Current vs. Forward Voltage Figure 7. Relative Radiant Power vs. Wavelength 0° 1000 Ie rel - Relative Radiant Intensity Ie - Radiant Intensity (mW/sr) 10° 20° 30° ϕ - Angular Displacement 100 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 10 1 0.1 1 16032 10 100 1000 15989 IF - Forward Current (mA) Figure 5. Radiant Intensity vs. Forward Current Figure 8. Relative Radiant Intensity vs. Angular Displacement Document Number 81078 Rev. 1.6, 04-Dec-07 www.vishay.com 3 TSHG6200 Vishay Semiconductors Package Dimensions in millimeters 95 10917 www.vishay.com 4 Document Number 81078 Rev. 1.6, 04-Dec-07 TSHG6200 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81078 Rev. 1.6, 04-Dec-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1