TSHG6210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
FEATURES
• • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
94 8389
DESCRIPTION
TSHG6210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
in
APPLICATIONS
• Infrared radiation source for operation with CMOS cameras • High speed IR data transmission • Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT TSHG6210 Ie (mW/sr) 230 ϕ (deg) ± 10 λp (nm) 850 tr (ns) 20
Note Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE TSHG6210 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81869 Rev. 1.2, 25-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W
TSHG6210
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
200 180
120 100 80 RthJA = 230 K/W 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100
21143
PV - Power Dissipation (mW)
140 120 100 80 60 40 20 0 RthJA = 230 K/W
IF - Forward Current (mA)
160
0
10
20 30 40
50 60 70 80
90 100
21142
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc d 820 140 125 230 2300 55 - 0.35 ± 10 850 40 0.25 20 13 18 3.7 880 420 MIN. TYP. 1.5 2.3 - 1.8 10 MAX. 1.8 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81869 Rev. 1.2, 25-Jun-09
TSHG6210
High Speed Infrared Emitting Diode, Vishay Semiconductors 850 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
1000 tP/T = 0.01 0.02 Tamb < 50 °C
IF - Forward Current (mA)
Radiant Power (mW)
e-
0.05 0.1
100
10
0.2 0.5 100 0.01
1
0.1
0.1 1 10 100
16971
1
10
100
1000
16031
tP - Pulse Duration (ms)
IF - Forward Current (mA)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
1000
Φe, rel - Relative Radiant Power
1.25 1.0
IF - Forward Current (mA)
100 tP = 100 µs tP/T = 0.001 10
0.75 0.5 0.25 0
1 0
18873
1 3 2 VF - Forward Voltage (V)
4
16972
800
850
900
λ- Wavelength (nm)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
10 000
10°
20°
30°
ϕ - Angular Displacement
1000
Ie rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
40° 1.0 50° 0.9 60° 0.8 70° 80° 0.7 0.6 0.4 0.2 0
100
10
tP = 0.1 ms tP/T = 0.001
1 1
21307
10
100
1000
21111
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81869 Rev. 1.2, 25-Jun-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 3
TSHG6210
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters
A
C 5.8 ± 0.15
R 2.49 (sphere)
7.7 ± 0.15
8.7 ± 0.3
(4.7)
35.5 ± 0.55
< 0.7
Area not plane 5 ± 0.15
+ 0.2 0.6 - 0.1
1 min.
+ 0.15 0.5 - 0.05 2.54 nom.
+ 0.15 0.5 - 0.05
technical drawings according to DIN specifications
6.544-5259.02-4 Issue: 8; 19.05.09
95 10917
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81869 Rev. 1.2, 25-Jun-09
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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