TSHG6410
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
FEATURES
• • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 18° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 18 MHz Good spectral matching with CMOS cameras Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
94 8389
DESCRIPTION
TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
in
APPLICATIONS
• Infrared radiation source for operation with CMOS cameras • High speed IR data transmission
PRODUCT SUMMARY
COMPONENT TSHG6410 Ie (mW/sr) 90 ϕ (deg) ± 18 λp (nm) 850 tr (ns) 20
Note Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE TSHG6410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 100 200 1 180 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W
Document Number: 81870 Rev. 1.2, 08-Jul-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 1
TSHG6410
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
200 180
120 100 80 RthJA = 230 K/W 60 40 20 0 0
21143
PV - Power Dissipation (mW)
140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 RthJA = 230 K/W
IF - Forward Current (mA)
160
10
20 30 40
50 60 70 80
90 100
21142
Tamb - Ambient Temperature (°C)
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 100 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc d 820 45 125 90 900 55 - 0.35 ± 18 850 40 0.25 20 13 18 2.1 880 135 MIN. TYP. 1.5 2.3 - 1.8 10 MAX. 1.8 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm
www.vishay.com 2
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81870 Rev. 1.2, 08-Jul-09
TSHG6410
High Speed Infrared Emitting Diode, Vishay Semiconductors 850 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
1000
tP/T = 0.01 0.02
Tamb < 50 °C
1000
IF - Forward Current (mA)
Radiant Power (mW)
e-
0.05 0.1
100
10
0.2 0.5 100 0.01
1
0.1
0.1 1 10 100
16971
1
10
100
1000
16031
tP - Pulse Duration (ms)
IF - Forward Current (mA)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
1000 Φe, rel - Relative Radiant Power
1.25 1.0
IF - Forward Current (mA)
100 tP = 100 µs tP/T = 0.001 10
0.75 0.5 0.25 0
1 0
18873
1 3 2 VF - Forward Voltage (V)
4
16972
800
850
900
λ- Wavelength (nm)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Power vs. Wavelength
1000
0°
10°
20°
30°
Ie rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
100
40° 1.0 0.9 0.8 50° 60° 70° 80° 0.7 0.6 0.4 0.2 0
10
tP = 0.1 ms
1 1 10 100 1000
21355
21308
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81870 Rev. 1.2, 08-Jul-09
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com 3
ϕ - Angular Displacement
TSHG6410
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, GaAlAs Double Hetero
PACKAGE DIMENSIONS in millimeters
A
C
7.7 ± 0.15
Ø 5.8 ± 0.15
R 2.49 (sphere)
8.7 ± 0.3
(4.5)
35.3 ± 0.55
< 0.7
Area not plane
0.6
+ 0.2 - 0.1
Ø 5 ± 0.15
1 min.
0.5 0.5
+ 0.15 - 0.05
+ 0.15 - 0.05
technical drawings according to DIN specifications
2.54 nom.
Drawing-No.: 6.544-5259.11-4 Issue: 2; 19.05.09
21809
www.vishay.com 4
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81870 Rev. 1.2, 08-Jul-09
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 11-Mar-11
www.vishay.com 1