TSKS5400-FSZ

TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs FEATURES • Package type: leaded • Package form: side view lens • Dimensions (L x W x H in mm): 5 x 2.65 x 5 • Peak wavelength: λp = 950 nm • High reliability • High radiant power 14354-1 • High radiant intensity • Angle of half intensity: ϕ = ± 30° • Low forward voltage • Suitable for high pulse current operation DESCRIPTION The TSKS5400-FSZ is an infrared, 950 nm emitting diode in GaAs technology with high radiant power, molded in a clear plastic package. • Good spectral matching with Si photodetectors • Package matched with detector TEKS5400 • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Photointerrupters • Transmissive sensors, gap sensors • Reflective sensors PRODUCT SUMMARY COMPONENT TSKS5400-FSZ Ie (mW/sr) 4.5 ϕ (deg) ± 30 λP (nm) 950 tr (ns) 800 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSKS5400-FSZ Note MOQ: minimum order quantity PACKAGING Tape and ammopack REMARKS MOQ: 2000 pcs, 2000 pcs/ammopack PACKAGE FORM Side view lens ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB tp ≤ 100 µs TEST CONDITION SYMBOL VR IF IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 6 100 2 170 100 - 25 to + 85 - 40 to + 100 260 270 UNIT V mA A mW °C °C °C °C K/W Document Number: 83780 Rev. 2.3, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 215 TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs 180 120 100 80 60 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21322 RthJA = 270 K/W IF - Forward Current (mA) RthJA = 270 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21321 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Reverse voltage Temperature coefficient of VF Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half sensitivity Peak wavelength Spectral bandwidth Rise time Note Tamb = 25 °C, unless otherwise specified IF = 50 mA IF = 50 mA IF = 100 mA IF = 1 A, tp/T = 0.01, tp ≤ 10 µs TEST CONDITION IF = 100 mA, tp ≤ 20 ms IR = 10 µA IF = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp ≤ 20 ms IF = 50 mA, tp ≤ 20 ms IF = 50 mA SYMBOL VF VR TKVF Cj Ie φe TKφe ϕ λp Δλ tr tr 2 6 - 1.3 30 4.5 10 - 0.8 ± 30 950 50 800 450 7 MIN. TYP. 1.3 MAX. 1.7 UNIT V V mV/K pF mW/sr mW %/K deg nm nm ns ns BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1.5 1.4 I F = 10 mA I F - Forward Current (mA) V F - Forward Voltage 1.3 1.2 1.1 1.0 0.9 0.8 -45 -30 -15 0 1 2 3 4 14347 0 15 30 45 60 75 90 V F - Forward Voltage (V) Tamb - Ambient Temperature (°C) Fig. 3 - Pulse Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature www.vishay.com 216 For technical questions, contact: emittertechsupport@vishay.com Document Number: 83780 Rev. 2.3, 05-Sep-08 TSKS5400 Infrared Emitting Diode, RoHS Compliant, Vishay Semiconductors 950 nm, GaAs 100 Ie - Radiant Intensity (mw/sr) Φe rel - Relative Radiant Power 1.25 1.0 10 0.75 0.5 1 t p /T = 0.001 t p = 100 µs 0.1 0.25 IF = 100 mA 0 900 950 1000 0.01 10 0 94 7913 10 1 10 2 10 3 10 4 94 7994 I F - Forward Current (mA) λ - Wavelength (nm) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength 0° 100 10° 20° I e rel - Relative Radiant Intensity 30 ° Φ e - Radiant Power (mW) 40 ° 1.0 0.9 0.8 0.7 50 ° 60 ° 70 ° 80 ° 0.6 0.4 0.2 0 0.2 0.4 0.6 10 1 0.1 1 13718 10 100 1000 14349 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 1.4 1.2 rel I F = 10 mA I e rel; Φe 1.0 0.8 0.6 0.4 0.2 0.0 - 45 - 30 - 15 0 15 30 45 60 75 90 14348 Tamb - Ambient Temperature (°C) Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature Document Number: 83780 Rev. 2.3, 05-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 217 TSKS5400 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs PACKAGE DIMENSIONS in millimeters 14345 www.vishay.com 218 For technical questions, contact: emittertechsupport@vishay.com Document Number: 83780 Rev. 2.3, 05-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1