TSMF1030

TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES TSMF1000 TSMF1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions (L x W x H in mm): 2.5 x 2 x 2.7 • Peak wavelength: λp = 890 nm • High radiant power • Angle of half intensity: ϕ = ± 17° • Low forward voltage • Suitable for high pulse current operation • Versatile terminal configurations 16758-5 TSMF1030 • Package matches with detector TEMD1000 • Floor life: 168 h, MSL 3, acc. J-STD-020 • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION TSMF1000 series are infrared, 890 nm emitting diodes in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS • IrDA compatible data transmission • Miniature light barrier • Photointerrupters • Optical switch • Control and drive circuits • Shaft encoders PRODUCT SUMMARY COMPONENT TSMF1000 TSMF1020 TSMF1030 Ie (mW/sr) 5 5 5 ϕ (deg) ± 17 ± 17 ± 17 λP (nm) 890 890 890 tr (ns) 30 30 30 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSMF1000 TSMF1020 TSMF1030 Note MOQ: minimum order quantity PACKAGING Tape and reel Tape and reel Tape and reel REMARKS MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel MOQ: 1000 pcs, 1000 pcs/reel PACKAGE FORM Reverse gullwing Gullwing Yoke ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation tp/T = 0.5, tp = 100 µs tp = 100 µs TEST CONDITION SYMBOL VR IF IFM IFSM PV VALUE 5 100 200 0.8 180 UNIT V mA mA A mW www.vishay.com 224 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81061 Rev. 1.7, 04-Sep-08 TSMF1000, TSMF1020, TSMF1030 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero ABSOLUTE MAXIMUM RATINGS PARAMETER Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t≤5s Soldered on PCB, pad dimensions: 4 mm x 4 mm TEST CONDITION SYMBOL Tj Tamb Tstg Tsd RthJA VALUE 100 - 40 to + 85 - 40 to + 100 260 400 UNIT °C °C °C °C K/W 200 180 120 100 80 60 RthJA = 400 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21166 PV - Power Dissipation (mW) 140 120 100 80 60 40 20 0 RthJA = 400 K/W IF - Forward Current (mA) 160 0 10 20 30 40 50 60 70 80 90 100 21165 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IDC = 70 mA, IAC = 30 mA pp TEST CONDITION IF = 20 mA IF = 1 A, tp = 100 µs IF = 1 m A VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA IF = 100 mA, tp = 100 µs IF = 100 mA, tp = 20 ms IF = 20 mA SYMBOL VF VF TKVF IR Cj Ie Ie φe TKφe ϕ λp Δλ TKλp tr tf fc d 2.5 160 5 25 35 - 0.6 ± 17 890 40 0.2 30 30 12 1.2 13 MIN. TYP. 1.3 2.4 - 1.8 10 MAX. 1.5 UNIT V V mV/K µA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns MHz mm Document Number: 81061 Rev. 1.7, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 225 TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 000 tp/T = 0.005 Tamb < 60 °C 1000 I F - Forward Current (mA) 1000 0.02 0.05 100 0.2 0.5 DC 10 0.1 Φe - Radiant Power (mW) 100 0.01 100 10 1 1 0.01 95 9985 0.1 1 10 0.1 10 0 94 8007 t p - Pulse Length (ms) 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 6 - Radiant Power vs. Forward Current 104 IF - Forward Current (mA) 1.6 103 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 102 101 0.4 100 0 94 8880 1 2 3 4 0 - 10 0 10 94 7993 50 100 140 VF - Forward Voltage (V) T amb - Ambient Temperature (°C) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 1.25 Ie - Radiant Intensity (mW/sr) Φe rel - Relative Radiant Power 1.0 100 0.75 10 0.5 1 0.25 0.1 100 16189 101 102 103 104 20082 0 800 900 1000 IF - Forward Current (mA) λ - Wavelength (nm) Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Power vs. Wavelength www.vishay.com 226 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81061 Rev. 1.7, 04-Sep-08 TSMF1000, TSMF1020, TSMF1030 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero REFLOW SOLDER PROFILE 0° 10° 20° 30° ϕ - Angular Displacement 260 240 Srel - Relative Sensitivity 220 Temperature (°C) 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 200 180 160 140 120 100 80 60 0 + 5 °C/s - 5 °C/s 60 s to 120 s 5s 20 40 60 80 100 120 140 160 180 200 220 94 8248 17172 Time (s) Fig. 9 - Relative Radiant Intensity vs. Angular Displacement Fig. 10 - Lead Tin (SnPb) Reflow Solder Profile PRECAUTIONS FOR USE 1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5 °C to 35 °C, R.H. 60 %. 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5 °C to 35 °C, R.H. 60 %, devices should be treated at 60 °C ± 5 °C for 15 h. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3. Document Number: 81061 Rev. 1.7, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 227 TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters: TSMF1000 16159 PACKAGE DIMENSIONS in millimeters: TSMF1020 3.8 ± 0.2 Ø 1.9 ± 0.2 0.85 0.15 ± 0.05 0.3 2.5 ± 0.2 2 ± 0.2 1 ± 0.1 1.1 0.5 0.4 4.5 ± 0.1 2.3 ± 0.1 0.75 1.4 2.7 ± 0.2 C A 16160 www.vishay.com 228 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81061 Rev. 1.7, 04-Sep-08 TSMF1000, TSMF1020, TSMF1030 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters: TSMF1030 16228 REEL DIMENSIONS in millimeters ±0.5 16 ±0.2 Unreel direction X .5 60.2 2. 5 ±0 178 ±1 Tape position coming out from reel 0. 5 13.2 ±1.5 13 ± X Label posted here Leader and trailer tape: Parts mounted Empty leader (400 mm, min.) Direction of pulling out Empty trailer (200 mm, min.) Drawing-No.: 9.800-5080.01-4 Issue: 3; 11.06.08 18033 Document Number: 81061 Rev. 1.7, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 229 TSMF1000, TSMF1020, TSMF1030 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero TAPING DIMENSIONS in millimeters: TSMF1000 3.05 ± 0.1 0.3 Ø 1.55 ± 0.05 4 ± 0.1 1.75 ± 0.1 5.5 ± 0.05 12 ± 0.3 2 ± 0.05 Top tape Anode Push pin through hole Feed direction 4 ± 0.1 Quantity per reel: 1000 pcs or 5000 pcs 18030 TAPING DIMENSIONS in millimeters: TSMF1020 3.05 ± 0.1 0.3 Ø 1.55 ± 0.05 4 ± 0.1 1.75 ± 0.1 5.5 ± 0.05 Feed direction 2 ± 0.05 4 ± 0.1 Top tape Anode Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs 18031 12 ± 0.3 www.vishay.com 230 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81061 Rev. 1.7, 04-Sep-08 TSMF1000, TSMF1020, TSMF1030 High Speed Infrared Emitting Diode, RoHS Vishay Semiconductors Compliant, 890 nm, GaAlAs Double Hetero TAPING DIMENSIONS in millimeters: TSMF1030 3.05 ± 0.1 0.3 Ø 1.55 ± 0.05 4 ± 0.1 1.75 ± 0.1 5.5 ± 0.05 Feed direction 2 ± 0.05 4 ± 0.1 18032 Top tape Anode Push pin through hole Quantity per reel: 1000 pcs or 5000 pcs 12 ± 0.3 Document Number: 81061 Rev. 1.7, 04-Sep-08 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 231 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1