TSML1020

TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability. TSML1000 TSML1020 TSML1030 TSML1040 Features • Outstanding high radiant power • Low forward voltage • • • • • • • Suitable for high pulse current operation Angle of half intensity ϕ = ± 12° Peak wavelength λp = 950 nm High reliability Matched Phototransistor series: TEMT1000 Versatile terminal configurations Lead-free component 16852 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For remote control Photointerrupters Punched tape readers Encoder Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse Voltage Forward current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient t ≤ 5 sec tp/T = 0.5, tp = 100 µs tp = 100 µs Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.0 190 100 - 40 to + 85 - 40 to + 100