VISHAY
TSOP341..UH1
Vishay Semiconductors
IR Receiver Modules for Remote Control Systems
Description
The TSOP341..UH1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes and high data rates at a supply voltage of 3 V.
1
2
3
16661
Features
• Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage range: 2.7 V to 5.5 V • High immunity against ambient light
Mechanical Data
Pinning: 1 = OUT, 2 = GND, 3 = VS
Parts Table
Part TSOP34130UH1 Carrier Frequency 30 kHz 33 kHz 36 kHz 36.7 kHz 38 kHz 40 kHz 56 kHz
Special Features
• Enhanced data rate up to 4000 bit/s • Operation with short short bursts possible (≥ 6 cycles/burst)
TSOP34133UH1 TSOP34136UH1 TSOP34137UH1 TSOP34138UH1 TSOP34140UH1 TSOP34156UH1
Block Diagram Application Circuit
16833
3 30 kΩ Input PIN AGC Band Pass Demodulator
VS
17170
OUT
Circuit
1
Transmitter TSOPxxxx with TSALxxxx
R1 = 100 Ω VS C1 = 4.7 µF VO +VS
OUT GND
µC
GND
2 Control Circuit
GND
R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 2.0 V by the external circuit.
Document Number 82255 Rev. 1.1, 26-Nov-03
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TSOP341..UH1
Vishay Semiconductors Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Tamb ≤ 85 °C) t ≤ 10 s, 1 mm from case (Pin 3) (Pin 3) (Pin 1) (Pin 1) Test condition Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value - 0.3 to + 6.0 3 - 0.3 to (VS+ 0.3) 10 100 - 25 to + 85 - 25 to + 85 30 260
VISHAY
Unit V mA V mA °C °C °C mW °C
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Supply Current (Pin 3) Supply Voltage Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Angle of half transmission distance Ev = 0 Ev = 40 klx, sunlight Test condition Symbol ISD ISH VS d 2.7 35 Min 0.7 Typ. 1.2 1.3 5.5 Max 1.5 Unit mA mA V m
Output Voltage Low (Pin 1) Irradiance (30-40 kHz)
VOSL Ee min 0.2
250 0.4
mV mW/m2
Irradiance (56 kHz)
Ee min
0.3
0.5
mW/m2
Irradiance (30-40 kHz)
Ee min
0.35
0.5
mW/m2
Irradiance (56 kHz)
Ee min
0.45
0.6
mW/m2
Irradiance Directivity
Ee max ϕ1/2
30 ± 45
W/m2 deg
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Document Number 82255 Rev. 1.1, 26-Nov-03
VISHAY
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Ee Optical Test Signal (IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms)
Ton ,Toff – Output Pulse Width ( ms )
TSOP341..UH1
Vishay Semiconductors
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0 l = 950 nm, optical test signal, fig.3 Toff Ton
tpi *) T *) tpi w 6/fo is recommended for optimal function Output Signal VO VOH VOL td1 )
1) 2)
t
14337
3/f0 < td < 9/f0 tpi – 4/f0 < tpo < tpi + 6/f0 t
tpo2 )
16910
10.0 100.0 1000.010000.0 Ee – Irradiance ( mW/m2 )
Figure 1. Output Function
Figure 4. Output Pulse Diagram
0.35
E e min / E e – Rel. Responsivity t po – Output Pulse Width ( ms )
1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.7
16926
0.30 Output Pulse 0.25 0.20 0.15 0.10 0.05 0.00 0.1 l = 950 nm, optical test signal, fig.1 Input Burst Duration
f = f0"5% Df ( 3dB ) = f0/7 0.9 1.1 1.3
1.0
10.0
100.0 1000.010000.0
16907
Ee – Irradiance ( mW/m2 )
f/f0 – Relative Frequency
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 5. Frequency Dependence of Responsivity
Ee
Optical Test Signal
Ee min– Threshold Irradiance ( mW/m 2 )
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.01 Ambient, l = 950 nm
Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K)
600 ms T = 60 ms Output Signal, ( see Fig.4 )
600 ms
t
94 8134
VO VOH VOL
Ton
Toff
t
16911
0.10
1.00
10.00
100.00
E – Ambient DC Irradiance (W/m2)
Figure 3. Output Function
Figure 6. Sensitivity in Bright Ambient
Document Number 82255 Rev. 1.1, 26-Nov-03
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TSOP341..UH1
Vishay Semiconductors
VISHAY
Ee min– Threshold Irradiance ( mW/m 2 )
Ee min– Threshold Irradiance ( mW/m 2 )
2.0 f = fo f = 10 kHz 1.0
0.6 0.5 0.4 0.3 0.2 0.1 0.0 –30 –15 Sensitivity in dark ambient
1.5
f = 1 kHz
0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0
0
15
30
45
60
75
90
16912
DVsRMS – AC Voltage on DC Supply Voltage (mV)
16918
Tamb – Ambient Temperature ( C )
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 10. Sensitivity vs. Ambient Temperature
E e min– Threshold Irradiance ( mW/m 2 )
2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 1.6 2.0 E – Field Strength of Disturbance ( kV/m )
S ( l ) rel – Relative Spectral Sensitivity
1.2 1.0 0.8 0.6 0.4 0.2 0.0 750
94 8147
16919
850 950 1050 l – Wavelength ( nm )
1150
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 11. Relative Spectral Sensitivity vs. Wavelength
1.0 0.9
Max. Envelope Duty Cycle
0°
10 °
20 °
30 °
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120
96 12223p2
40 ° 1.0 0.9 0.8 f = 38 kHz, Ee = 2 mW/m2 0.7 50 ° 60 ° 70 ° 80 ° 0.6 0.4 0.2 0 0.2 0.4 0.6 drel - Relative Transmission Distance
16914
Burst Length ( number of cycles / burst )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
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Document Number 82255 Rev. 1.1, 26-Nov-03
VISHAY
TSOP341..UH1
Vishay Semiconductors
• Continuous signal at 38 kHz or at any other frequency • Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below).
1.0
E e min – Sensitivity ( mW/m 2 )
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.1
17185
VS – Supply Voltage ( V )
IR Signal
Figure 13. Sensitivity vs. Supply Voltage
IR Signal from fluorescent lamp with low modulation
Suitable Data Format
The circuit of the TSOP341..UH1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: • Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). • Burst length should be 6 cycles/burst or longer. • After each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. • For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should have at least same length as the burst. • Up to 2200 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, RCMM Code, R-2000 Code, RECS-80 Code. When a disturbance signal is applied to the TSOP341..UH1 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP341..UH1 are: • DC light (e.g. from tungsten bulb or sunlight)
16920
0
5
10 Time ( ms )
15
20
Figure 14. IR Signal from Fluorescent Lamp with low Modulation
Document Number 82255 Rev. 1.1, 26-Nov-03
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TSOP341..UH1
Vishay Semiconductors Package Dimensions in mm
VISHAY
14433
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Document Number 82255 Rev. 1.1, 26-Nov-03
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
TSOP341..UH1
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82255 Rev. 1.1, 26-Nov-03
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