TSOP34138UH1

VISHAY TSOP341..UH1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP341..UH1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the operation with short burst transmission codes and high data rates at a supply voltage of 3 V. 1 2 3 16661 Features • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Supply voltage range: 2.7 V to 5.5 V • High immunity against ambient light Mechanical Data Pinning: 1 = OUT, 2 = GND, 3 = VS Parts Table Part TSOP34130UH1 Carrier Frequency 30 kHz 33 kHz 36 kHz 36.7 kHz 38 kHz 40 kHz 56 kHz Special Features • Enhanced data rate up to 4000 bit/s • Operation with short short bursts possible (≥ 6 cycles/burst) TSOP34133UH1 TSOP34136UH1 TSOP34137UH1 TSOP34138UH1 TSOP34140UH1 TSOP34156UH1 Block Diagram Application Circuit 16833 3 30 kΩ Input PIN AGC Band Pass Demodulator VS 17170 OUT Circuit 1 Transmitter TSOPxxxx with TSALxxxx R1 = 100 Ω VS C1 = 4.7 µF VO +VS OUT GND µC GND 2 Control Circuit GND R1 + C1 recommended to suppress power supply disturbances. The output voltage should not be hold continuously at a voltage below VO = 2.0 V by the external circuit. Document Number 82255 Rev. 1.1, 26-Nov-03 www.vishay.com 1 TSOP341..UH1 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Supply Voltage Supply Current Output Voltage Output Current Junction Temperature Storage Temperature Range Operating Temperature Range Power Consumption Soldering Temperature (Tamb ≤ 85 °C) t ≤ 10 s, 1 mm from case (Pin 3) (Pin 3) (Pin 1) (Pin 1) Test condition Symbol VS IS VO IO Tj Tstg Tamb Ptot Tsd Value - 0.3 to + 6.0 3 - 0.3 to (VS+ 0.3) 10 100 - 25 to + 85 - 25 to + 85 30 260 VISHAY Unit V mA V mA °C °C °C mW °C Electrical and Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Supply Current (Pin 3) Supply Voltage Transmission Distance Ev = 0, test signal see fig.1, IR diode TSAL6200, IF = 250 mA IOSL = 0.5 mA, Ee = 0.7 mW/m2, test signal see fig. 1 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 3 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 VS = 5 V Pulse width tolerance: tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig.3 tpi - 5/fo < tpo < tpi + 6/fo, test signal see fig. 3 Angle of half transmission distance Ev = 0 Ev = 40 klx, sunlight Test condition Symbol ISD ISH VS d 2.7 35 Min 0.7 Typ. 1.2 1.3 5.5 Max 1.5 Unit mA mA V m Output Voltage Low (Pin 1) Irradiance (30-40 kHz) VOSL Ee min 0.2 250 0.4 mV mW/m2 Irradiance (56 kHz) Ee min 0.3 0.5 mW/m2 Irradiance (30-40 kHz) Ee min 0.35 0.5 mW/m2 Irradiance (56 kHz) Ee min 0.45 0.6 mW/m2 Irradiance Directivity Ee max ϕ1/2 30 ± 45 W/m2 deg www.vishay.com 2 Document Number 82255 Rev. 1.1, 26-Nov-03 VISHAY Typical Characteristics (Tamb = 25 °C unless otherwise specified) Ee Optical Test Signal (IR diode TSAL6200, IF=0.4 A, N=6 pulses, f=f0, T=10 ms) Ton ,Toff – Output Pulse Width ( ms ) TSOP341..UH1 Vishay Semiconductors 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1.0 l = 950 nm, optical test signal, fig.3 Toff Ton tpi *) T *) tpi w 6/fo is recommended for optimal function Output Signal VO VOH VOL td1 ) 1) 2) t 14337 3/f0 < td < 9/f0 tpi – 4/f0 < tpo < tpi + 6/f0 t tpo2 ) 16910 10.0 100.0 1000.010000.0 Ee – Irradiance ( mW/m2 ) Figure 1. Output Function Figure 4. Output Pulse Diagram 0.35 E e min / E e – Rel. Responsivity t po – Output Pulse Width ( ms ) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.7 16926 0.30 Output Pulse 0.25 0.20 0.15 0.10 0.05 0.00 0.1 l = 950 nm, optical test signal, fig.1 Input Burst Duration f = f0"5% Df ( 3dB ) = f0/7 0.9 1.1 1.3 1.0 10.0 100.0 1000.010000.0 16907 Ee – Irradiance ( mW/m2 ) f/f0 – Relative Frequency Figure 2. Pulse Length and Sensitivity in Dark Ambient Figure 5. Frequency Dependence of Responsivity Ee Optical Test Signal Ee min– Threshold Irradiance ( mW/m 2 ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.01 Ambient, l = 950 nm Correlation with ambient light sources: 10W/m2^1.4klx (Std.illum.A,T=2855K) 10W/m2^8.2klx (Daylight,T=5900K) 600 ms T = 60 ms Output Signal, ( see Fig.4 ) 600 ms t 94 8134 VO VOH VOL Ton Toff t 16911 0.10 1.00 10.00 100.00 E – Ambient DC Irradiance (W/m2) Figure 3. Output Function Figure 6. Sensitivity in Bright Ambient Document Number 82255 Rev. 1.1, 26-Nov-03 www.vishay.com 3 TSOP341..UH1 Vishay Semiconductors VISHAY Ee min– Threshold Irradiance ( mW/m 2 ) Ee min– Threshold Irradiance ( mW/m 2 ) 2.0 f = fo f = 10 kHz 1.0 0.6 0.5 0.4 0.3 0.2 0.1 0.0 –30 –15 Sensitivity in dark ambient 1.5 f = 1 kHz 0.5 f = 100 Hz 0.0 0.1 1.0 10.0 100.0 1000.0 0 15 30 45 60 75 90 16912 DVsRMS – AC Voltage on DC Supply Voltage (mV) 16918 Tamb – Ambient Temperature ( C ) Figure 7. Sensitivity vs. Supply Voltage Disturbances Figure 10. Sensitivity vs. Ambient Temperature E e min– Threshold Irradiance ( mW/m 2 ) 2.0 f(E) = f0 1.6 1.2 0.8 0.4 0.0 0.0 0.4 0.8 1.2 1.6 2.0 E – Field Strength of Disturbance ( kV/m ) S ( l ) rel – Relative Spectral Sensitivity 1.2 1.0 0.8 0.6 0.4 0.2 0.0 750 94 8147 16919 850 950 1050 l – Wavelength ( nm ) 1150 Figure 8. Sensitivity vs. Electric Field Disturbances Figure 11. Relative Spectral Sensitivity vs. Wavelength 1.0 0.9 Max. Envelope Duty Cycle 0° 10 ° 20 ° 30 ° 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 96 12223p2 40 ° 1.0 0.9 0.8 f = 38 kHz, Ee = 2 mW/m2 0.7 50 ° 60 ° 70 ° 80 ° 0.6 0.4 0.2 0 0.2 0.4 0.6 drel - Relative Transmission Distance 16914 Burst Length ( number of cycles / burst ) Figure 9. Max. Envelope Duty Cycle vs. Burstlength Figure 12. Directivity www.vishay.com 4 Document Number 82255 Rev. 1.1, 26-Nov-03 VISHAY TSOP341..UH1 Vishay Semiconductors • Continuous signal at 38 kHz or at any other frequency • Signals from fluorescent lamps with electronic ballast (an example of the signal modulation is in the figure below). 1.0 E e min – Sensitivity ( mW/m 2 ) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.1 17185 VS – Supply Voltage ( V ) IR Signal Figure 13. Sensitivity vs. Supply Voltage IR Signal from fluorescent lamp with low modulation Suitable Data Format The circuit of the TSOP341..UH1 is designed in that way that unexpected output pulses due to noise or disturbance signals are avoided. A bandpass filter, an integrator stage and an automatic gain control are used to suppress such disturbances. The distinguishing mark between data signal and disturbance signal are carrier frequency, burst length and duty cycle. The data signal should fulfill the following conditions: • Carrier frequency should be close to center frequency of the bandpass (e.g. 38 kHz). • Burst length should be 6 cycles/burst or longer. • After each burst which is between 6 cycles and 70 cycles a gap time of at least 10 cycles is necessary. • For each burst which is longer than 1.8 ms a corresponding gap time is necessary at some time in the data stream. This gap time should have at least same length as the burst. • Up to 2200 short bursts per second can be received continuously. Some examples for suitable data format are: NEC Code, Toshiba Micom Format, Sharp Code, RC5 Code, RC6 Code, RCMM Code, R-2000 Code, RECS-80 Code. When a disturbance signal is applied to the TSOP341..UH1 it can still receive the data signal. However the sensitivity is reduced to that level that no unexpected pulses will occur. Some examples for such disturbance signals which are suppressed by the TSOP341..UH1 are: • DC light (e.g. from tungsten bulb or sunlight) 16920 0 5 10 Time ( ms ) 15 20 Figure 14. IR Signal from Fluorescent Lamp with low Modulation Document Number 82255 Rev. 1.1, 26-Nov-03 www.vishay.com 5 TSOP341..UH1 Vishay Semiconductors Package Dimensions in mm VISHAY 14433 www.vishay.com 6 Document Number 82255 Rev. 1.1, 26-Nov-03 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to TSOP341..UH1 Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82255 Rev. 1.1, 26-Nov-03 www.vishay.com 7