TSUS5200_09

TSUS5200, TSUS5201, TSUS5202 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 950 nm High reliability Angle of half intensity: ϕ = ± 15° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8390 in DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. APPLICATIONS • Infrared remote control and free air transmission systems with low forward voltage and small package requirements • Emitter in transmissive sensors • Emitter in reflective sensors PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) ± 15 ± 15 ± 15 λP (nm) 950 950 950 tr (ns) 800 800 800 TSUS5200 20 TSUS5201 25 TSUS5202 30 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSUS5200 TSUS5201 TSUS5202 Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ T-1¾ T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified TEST CONDITION SYMBOL VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA VALUE 5 150 300 2.5 170 100 - 40 to + 85 - 40 to + 100 260 230 UNIT V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 µs tp = 100 µs t ≤ 5 s, 2 mm from case J-STD-051, leads 7 mm, soldered on PCB Document Number: 81055 Rev. 2.2, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 1 TSUS5200, TSUS5201, TSUS5202 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs 180 120 100 80 60 PV - Power Dissipation (mW) 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21314 RthJA = 230 K/W IF - Forward Current (mA) RthJA = 230 K/W 40 20 0 0 10 20 30 40 50 60 70 80 90 100 21313 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Temperature coefficient of φe Angle of half intensity Peak wavelength Spectral bandwidth Temperature coefficient of λp Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A TEST CONDITION IF = 100 mA, tp = 20 ms IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA SYMBOL VF TKVF IR Cj TKφe ϕ λp Δλ TKλp tr tr tf tf d 30 - 0.8 ± 15 950 50 0.2 800 400 800 400 3.8 MIN. TYP. 1.3 - 1.3 100 MAX. 1.7 UNIT V mV/K µA pF %/K deg nm nm nm/K ns ns ns ns mm www.vishay.com 2 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81055 Rev. 2.2, 29-Jun-09 TSUS5200, TSUS5201, TSUS5202 Infrared Emitting Diode, 950 nm, GaAs TYPE DEDICATED CHARACTERISTICS PARAMETER Forward voltage TEST CONDITION IF = 1.5 A, tp = 100 µs PART TSUS5200 TSUS5201 TSUS5202 TSUS5200 IF = 100 mA, tp = 20 ms Radiant intensity IF = 1.5 A, tp = 100 µs TSUS5201 TSUS5202 TSUS5200 TSUS5201 TSUS5202 TSUS5200 Radiant power IF = 100 mA, tp = 20 ms TSUS5201 TSUS5202 Note Tamb = 25 °C, unless otherwise specified SYMBOL VF VF VF Ie Ie Ie Ie Ie Ie φe φe φe 10 15 20 95 120 170 MIN. TYP. 2.2 2.2 2.2 20 25 30 180 230 280 13 14 15 MAX. 3.4 3.4 2.7 50 50 50 UNIT V V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 1 I F - Forward Current (A) 1.2 VF rel - Relative Forward Voltage (V) I FSM = 2.5 A ( Single Pulse ) tp/T = 0.01 10 0 0.05 0.1 0.5 1.0 10 -1 10 -2 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 94 7989 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 94 7990 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 5 - Relative Forward Voltage vs. Ambient Temperature 10 4 10 3 10 2 10 1 10 0 10 -1 94 7996 1000 I e - Radiant Intensity (mW/sr) I F - Forward Current (mA) 100 TSUS 5202 TSUS5200 10 0 1 2 3 4 94 7991 1 10 0 TSUS 5201 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 V F - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Fig. 6 - Radiant Intensity vs. Forward Current Document Number: 81055 Rev. 2.2, 29-Jun-09 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com 3 TSUS5200, TSUS5201, TSUS5202 Vishay Semiconductors 1000 Φ - Radiant Power (mW) e Φe rel - Relative Radiant Power TSUS 5202 100 TSUS5200 10 Infrared Emitting Diode, 950 nm, GaAs 1.25 1.0 0.75 0.5 1 0.25 IF = 100 mA 0 900 950 λ - Wavelength (nm) 1000 0.1 10 0 94 7992 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 94 7994 Fig. 7 - Radiant Power vs. Forward Current 1.6 Fig. 9 - Relative Radiant Power vs. Wavelength 0° 10° 20° 30° 1.2 Ie rel; Φe rel IF = 20 mA 0.8 I e rel - Relative Radiant Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.4 0 - 10 0 10 94 7993 50 100 140 94 7995 T amb - Ambient Temperature (°C) 0.6 0.4 0.2 0 0.2 0.4 0.6 Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature Fig. 10 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters A C Ø 5.8 ± 0.15 R 2.49 (sphere) 7.7 ± 0.15 12.5 ± 0.3 8.7 ± 0.3 (4.7) 35.5 ± 0.55 < 0.7 Area not plane 1.1 ± 0.25 Ø 5 ± 0.15 1 min. 0.15 0.5 + 0.05 2.54 nom. + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 6.544-5258.02-4 Issue: 6; 19.05.09 95 10916 www.vishay.com 4 For technical questions, contact: emittertechsupport@vishay.com Document Number: 81055 Rev. 2.2, 29-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1