TSUS5402

TSUS540. Vishay Telefunken GaAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description TSUS540. series are infrared emitting diodes in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistors. 94 8390 Features D D D D D D D D D Low cost emitter Low forward voltage High radiant power and radiant intensity Suitable for DC and high pulse current operation Standard T–1¾ (ø 5 mm) package Comfortable angle of half intensity ϕ = ± 22° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 150 300 2.5 210 100 –55...+100 –55...+100 260 375 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from case Document Number 81056 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSUS540. Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF TKVF IR Cj TKfe ϕ Min Typ 1.3 –1.3 30 –0.8 ±22 950 50 0.2 800 400 800 400 Max 1.7 100 Unit V mV/K mA pF %/K deg nm nm nm/K ns ns ns ns TKlp tr tr tf tf lp Dl Type Dedicated Characteristics Tamb = 25_C Parameter Forward Voltage g Test Conditions IF=1.5A, tp=100ms IF=100mA, tp=20ms Radiant Intensity Intensity IF=1.5A, tp=100ms Type TSUS5400/5401 TSUS5402 TSUS5400 TSUS5401 TSUS5402 TSUS5400 TSUS5401 TSUS5402 TSUS5400 TSUS5401 TSUS5402 Symbol VF VF Ie Ie Ie Ie Ie Ie Min Typ 2.2 2.2 14 17 20 140 160 190 13 14 15 Max 3.4 2.7 Unit V V mW/sr mW/sr mW/sr mW/sr mW/sr mW/sr mW mW mW Radiant Power IF=100mA, tp=20ms fe fe fe 7 10 15 60 85 120 www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 81056 Rev. 2, 20-May-99 TSUS540. Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 250 PV – Power Dissipation ( mW ) IF – Forward Current ( mA ) 100 200 104 103 102 101 100 10–1 0 94 7996 e 150 RthJA 100 50 0 0 20 40 60 80 1 2 3 4 94 7957 e Tamb – Ambient Temperature ( °C ) VF – Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 250 200 V Frel – Relative Forward Voltage IF – Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage 1.2 1.1 IF = 10 mA 1.0 0.9 150 100 RthJA 50 0 0 20 40 60 80 100 0.8 0.7 0 20 40 60 80 100 94 7988 e Tamb – Ambient Temperature ( °C ) 94 7990 e Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 1000 I e – Radiant Intensity ( mW/sr ) TSUS 5401 100 TSUS 5402 101 I F – Forward Current ( A ) IFSM = 2.5 A ( Single Pulse ) tp / T = 0.01 100 0.05 0.1 0.5 1.0 10–1 10–2 10 TSUS 5400 1 10–1 100 101 tp – Pulse Duration ( ms ) 102 94 7997 e 100 94 7989 e 101 102 103 IF – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 81056 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) TSUS540. Vishay Telefunken 1000 1.25 TSUS 5402 100 TSUS 5400 10 Fe rel – Relative Radiant Power Fe – Radiant Power ( mW ) 1.0 0.75 0.5 1 0.25 IF = 100 mA 0 900 0.1 100 94 7998 e 101 102 103 IF – Forward Current ( mA ) 104 94 7994 e l – Wavelength ( nm ) 0° 950 1000 Figure 7. Radiant Power vs. Forward Current Figure 9. Relative Radiant Power vs. Wavelength 10 ° 20 ° 1.6 I e rel – Relative Radiant Intensity 30° 1.2 I e rel ; Fe rel IF = 20 mA 0.8 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 0.4 0 –10 0 10 94 7993 e 50 100 140 94 7999 e Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 81056 Rev. 2, 20-May-99 TSUS540. Vishay Telefunken Dimensions in mm 96 12119 Document Number 81056 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) TSUS540. Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 81056 Rev. 2, 20-May-99