U1C

U1C

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    U1C - Surface Mount Ultrafast Plastic Rectifier - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
U1C 数据手册
New Product U1B, U1C, U1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF at IF = 1.0 A TJ max. 1.0 A 100 V, 150 V, 200 V 30 A 15 ns 0.76 V 150 °C For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VRRM IF(AV) IFSM TJ, TSTG SYMBOL U1B U1B 100 U1C U1C 150 1.0 30 - 55 to + 150 U1D U1D 200 V A A °C UNIT Document Number: 89400 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product U1B, U1C, U1D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER IF = 0.6 A Instantaneous forward voltage IF = 1.0 A IF = 0.6 A IF = 1.0 A Reverse current Rated VR IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse recovery time IF = 0.6 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM IF = 0.6 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM 4.0 V, 1 MHz TEST CONDITIONS TA = 25 °C VF (1) TA = 100 °C TA = 25 °C TA = 100 °C TA = 25 °C TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C Qrr CJ trr IR (2) SYMBOL TYP. 0.82 0.87 0.71 0.76 55 24 29 7 13 6.8 MAX. 0.87 0.92 0.78 0.84 5.0 100 15 nC pF ns μA V UNIT Storage charge Typical junction capacitance Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Note (1) Free air, mounted on recommended copper pad area SYMBOL RJA (1) RJM (1) U1B U1C 115 22 U1D UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N U1D-M3/61T U1D-M3/5AT UNIT WEIGHT (g) 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT BASE QUANTITY 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 1.0 D = 0.5 D = 0.8 Average Forward Current (A) 1.0 Average Power Loss (W) 0.8 D = 0.3 D = 0.2 D = 1.0 0.8 0.6 D = 0.1 0.6 0.4 T 0.2 D = tp/T tp 1.0 1.2 0.4 0.2 0 80 90 100 110 120 130 140 150 0 0 0.2 0.4 0.6 0.8 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Derating Curve www.vishay.com 2 Fig. 2 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: 89400 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product U1B, U1C, U1D Vishay General Semiconductor 10 10 TA = 150 °C Instantaneous Forward Current (A) 1 TA = 125 °C TA = 100 °C 0.1 TA = 25 °C Junction Capactiance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 0.1 1 10 100 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (μA) TA = 150 °C 100 TA = 125 °C TA = 100 °C 10 Junction to Ambient 10 1 TA = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 1 0.001 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 89400 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1
U1C
1. 物料型号 - U1B, U1C, U1D:这些是Vishay General Semiconductor生产的Surface Mount Ultrafast Plastic Rectifier的型号。

2. 器件简介 - Vishay General Semiconductor生产的Surface Mount Ultrafast Plastic Rectifier,封装为DO-214AC (SMA)。该器件具有超快恢复时间、低正向电压、低功耗损失、高正向浪涌能力等特点,并且符合RoHS指令和WEEE指令,无卤素,符合IEC 61249-2-21定义。

3. 引脚分配 - 色环端表示阴极。

4. 参数特性 - 最大重复峰值反向电压:U1B为100V,U1C为150V,U1D为200V。 - 最大平均正向整流电流:U1B为1.0A。 - 峰值正向浪涌电流:U1B为30A。 - 工作结和存储温度范围:-55至+150°C。 - 正向电压:在IF=0.6A时为0.82V,在IF=1.0A时为0.87V,在100°C时为0.76V。 - 反向电流:在额定VR下,25°C时为5.0A,在100°C时为55A至100A。 - 反向恢复时间:在I=0.5A, IR=1.0A, Ir=0.25A时为15ns。 - 存储电荷:在I = 0.6 A, dl/dt = 50 A/us, VR = 30 V,I=0.1 IAM时为7nC。 - 典型结电容:在4.0V,1 MHz时为6.8pF。 - 典型热阻:RBJA为115°C/W,RBJM为22°C/W。

5. 功能详解 - 器件采用氧化物平面芯片结构,具有低正向电压、超快恢复时间、高正向浪涌能力等特点。

6. 应用信息 - 用于低压、高频整流开关电源、自由轮流通路二极管、DC/DC转换器或极性保护应用。

7. 封装信息 - 封装为DO-214AC (SMA),模塑料满足UL 94 V-0可燃性等级,基材P/N-M3为无卤素、RoHS兼容和商业级,端子为亚光锡镀层引线,可焊性符合J-STD-002和JESD 22-B102,M3后缀符合JESD 201 class 1A须根测试。

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