U1D-M3-61T

New Product U1B, U1C, U1D Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery time • Low forward voltage, low power losses • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF at IF = 1.0 A TJ max. 1.0 A 100 V, 150 V, 200 V 30 A 15 ns 0.76 V 150 °C For use in low voltage, high frequency rectifier of switching power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range VRRM IF(AV) IFSM TJ, TSTG SYMBOL U1B U1B 100 U1C U1C 150 1.0 30 - 55 to + 150 U1D U1D 200 V A A °C UNIT Document Number: 89400 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product U1B, U1C, U1D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER IF = 0.6 A Instantaneous forward voltage IF = 1.0 A IF = 0.6 A IF = 1.0 A Reverse current Rated VR IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse recovery time IF = 0.6 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM IF = 0.6 A, dI/dt = 50 A/μs, VR = 30 V, Irr = 0.1 IRM 4.0 V, 1 MHz TEST CONDITIONS TA = 25 °C VF (1) TA = 100 °C TA = 25 °C TA = 100 °C TA = 25 °C TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C Qrr CJ trr IR (2) SYMBOL TYP. 0.82 0.87 0.71 0.76 55 24 29 7 13 6.8 MAX. 0.87 0.92 0.78 0.84 5.0 100 15 nC pF ns μA V UNIT Storage charge Typical junction capacitance Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Note (1) Free air, mounted on recommended copper pad area SYMBOL RJA (1) RJM (1) U1B U1C 115 22 U1D UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N U1D-M3/61T U1D-M3/5AT UNIT WEIGHT (g) 0.064 0.064 PREFERRED PACKAGE CODE 61T 5AT BASE QUANTITY 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 1.2 1.0 D = 0.5 D = 0.8 Average Forward Current (A) 1.0 Average Power Loss (W) 0.8 D = 0.3 D = 0.2 D = 1.0 0.8 0.6 D = 0.1 0.6 0.4 T 0.2 D = tp/T tp 1.0 1.2 0.4 0.2 0 80 90 100 110 120 130 140 150 0 0 0.2 0.4 0.6 0.8 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Forward Derating Curve www.vishay.com 2 Fig. 2 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: 89400 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 19-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product U1B, U1C, U1D Vishay General Semiconductor 10 10 TA = 150 °C Instantaneous Forward Current (A) 1 TA = 125 °C TA = 100 °C 0.1 TA = 25 °C Junction Capactiance (pF) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1 0.1 1 10 100 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (μA) TA = 150 °C 100 TA = 125 °C TA = 100 °C 10 Junction to Ambient 10 1 TA = 25 °C 0.1 0.01 10 20 30 40 50 60 70 80 90 100 1 0.001 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 89400 Revision: 19-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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