U431

U430/431 Vishay Siliconix Matched N-Channel Pairs PRODUCT SUMMARY Part Number U430 U431 VGS(off) (V) –1 to –4 –2 to –6 V(BR)GSS Min (V) –25 –25 gfs Min (mS) 10 10 IG Typ (pA) –15 –15 jVGS1 – VGS2j Typ (mV) 25 25 FEATURES D D D D D D Two-Chip Design High Slew Rate Low Offset/Drift Voltage Low Gate Leakage: 15 pA Low Noise High CMRR: 75 dB BENEFITS D D D D D D Tight Differential Match vs. Current Improved Op Amp Speed, Settling Time Accuracy Minimum Input Error/Trimming Requirement Insignificant Signal Loss/Error Voltage High System Sensitivity Minimum Error with Large Input Signals APPLICATIONS D Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters DESCRIPTION The U430/431 are matched JFET pairs assembled in a TO-78 package. These devices offer good power gain even at frequencies beyond 250 MHz. The TO-78 package is available with full military processing (see Military Information). For similar products, see the low-noise U/SST401 series, the high-gain 2N5911/5912, and the low-leakage U421/423 data sheets. TO-78 S1 1 7 S2 G1 2 6 G2 3 D1 4 Case Top View 5 D2 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Document Number: 70249 S-04031—Rev. E, 04-Jun-01 Power Dissipation : Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 2.4 mW/_C above 25_C b. Derate 4 mW/_C above 25_C www.vishay.com 8-1 U430/431 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits U430 U431 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Symbol Test Conditions Typb Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG = –1 mA, VDS = 0 V VDS = 10 V, ID = 1 nA VDS = 10 V, VGS = 0 V VGS = –15 V, VDS = 0 V TA = 150_C VDG = 10 V, ID = 5 mA TA = 150_C IG = 10 mA , VDS = 0 V –35 –25 –1 12 –4 30 –150 –150 –25 V –2 24 –6 60 –150 –150 mA pA nA pA nA 1 1 V –5 –10 –15 –10 0.8 Gate Operating Current Gate-Source Forward Voltage IG VGS(F) Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltage gfs VDS = 10 V, ID = 10 mA , f = 1 kHz gos Ciss VGS = –10 V, VDS = 0 V, f = 1 MHz Crss en VDS = 10 V, ID = 10 mA f = 100 Hz 2 6 2.5 2.5 nV⁄ √Hz 100 4.5 250 5 250 5 pF 15 10 10 mS mS High Frequency Common-Source Forward Transconductance Common-Source Output Conductance Power-Match Source Admittance gfs gos gig VDS = 10 V, ID = 10 mA f = 100 MHz 14 0.13 12 mS Matching Differential Gate-Source Voltage Saturation Drain Current Ratioc Transconductance Ratioc Gate-Source Cutoff Voltage Ratioc Differential Gate Current Common Mode Rejection Ratio |V GS1–V GS2| I DSS1 I DSS2 gfs1 gfs2 V GS(off)1 V GS(off)2 |I G1–I G2| CMRR VDG = 10 V, ID = 10 mA VDS = 10 V, VGS = 0 V VDS = 10 V, ID = 10 mA, f = 1 kHz VDS = 10 V, ID = 1 nA VDG = 10 V, ID = 5 mA VDG = 5 to 10 V, ID = 10 mA 25 0.95 0.95 0.9 0.9 1 1 0.9 0.9 1 1 mV 0.95 –2 75 0.9 1 0.9 1 pA dB NZBD Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. Assumes smaller value in the numerator. www.vishay.com 8-2 Document Number: 70249 S-04031—Rev. E, 04-Jun-01 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 100 IDSS – Saturation Drain Current (mA) IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 50 gfs – Forward Transconductance (mS) 10 nA Gate Leakage Current TA = 125_C IG @ ID = 10 mA 200 mA 80 40 1 nA IG – Gate Leakage 60 gfs 40 IDSS 30 100 pA IGSS @ 125_C 200 mA 20 10 pA 10 mA TA = 25_C 1 pA IGSS @ 25_C 20 10 0 0 –3 –4 –2 VGS(off) – Gate-Source Cutoff Voltage (V) –1 –5 0 0.1 pA 0 3 4 9 12 15 VDG – Drain-Gate Voltage (V) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 rDS(on) – Drain-Source On-Resistance ( Ω ) rDS @ ID = 1 mA, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz gfs – Forward Transconductance (mS) gos – Output Conductance (µS) 80 240 16 300 20 Common-Source Forward Transconductance vs. Drain Current VGS(off) = –3 V VDS = 10 V f = 1 kHz TA = –55_C 12 25_C 8 125_C 60 180 40 rDS gos 20 120 60 4 0 0 –1 –2 –3 –4 –5 VGS(off) – Gate-Source Cutoff Voltage (V) 0 0 0.1 1 ID – Drain Current (mA) 10 Transconductance vs. Gate-Source Voltage 30 VGS(off) = –1.5 V gfs – Forward Transconductance (mS) 24 TA = –55_C 25_C 18 125_C 12 VDS = 10 V f = 1 kHz gfs – Forward Transconductance (mS) 40 50 Transconductance vs. Gate-Source Voltage VGS(off) = –3 V VDS = 10 V f = 1 kHz TA = –55_C 30 25_C 20 125_C 10 6 0 0 –0.4 –0.8 –1.2 –1.6 –2 VGS – Gate-Source Voltage (V) 0 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 www.vishay.com 8-3 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 20 VGS(off) = –1.5 V 16 ID – Drain Current (mA) VGS = 0 V –0.2 V ID – Drain Current (mA) 40 –0.4 V 30 –0.8 V –1.2 V –1.6 V 10 –2.0 V –2.4 V 0 2 4 6 8 10 50 VGS(off) = –3 V VGS = 0 V Output Characteristics 12 –0.4 V 8 –0.6 V –0.8 V 20 4 –1.0 V 0 0 2 4 6 8 10 0 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Output Characteristics 15 VGS(off) = –1.5 V 12 ID – Drain Current (mA) –0.2 V 9 –0.4 V 6 –0.6 V 3 –0.8 V –1.0 V 0 0 0.2 0.4 0.6 0.8 1 0 0 0.2 ID – Drain Current (mA) VGS = 0 V 24 30 Output Characteristics VGS(off) = –3 V VGS = 0 V 18 –0.4 V –0.8 V –1.2 V 12 –1.6 V 6 –2.0 V –2.4 V 0.4 0.6 0.8 1 VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V) Transfer Characteristics 30 VGS(off) = –1.5 V 24 ID – Drain Current (mA) ID – Drain Current (mA) VDS = 10 V f = 1 kHz 80 100 Transfer Characteristics VGS(off) = –3 V VDS = 10 V f = 1 kHz 18 TA = –55_C 25_C 60 TA = –55_C 25_C 12 40 6 125_C 20 125_C 0 0 –0.4 –0.8 –1.2 –1.6 –2 0 0 –0.6 –1.2 –1.8 –2.4 –3 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) www.vishay.com 8-4 Document Number: 70249 S-04031—Rev. E, 04-Jun-01 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance vs. Drain Current 100 rDS(on) – Drain-Source On-Resistance ( Ω ) TA = 25_C 80 VGS(off) = –1.5 V 60 AV – Voltage Gain 80 100 1 ) R Lg os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID AV + g fs R L Circuit Voltage Gain vs. Drain Current 40 –3 V 20 40 VGS(off) = –1.5 V 20 –3 V 0 1 10 ID – Drain Current (mA) 100 0 0.1 1 ID – Drain Current (mA) 10 Common-Source Input Capacitance vs. Gate-Source Voltage 15 C rss – Reverse Feedback Capacitance (pF) f = 1 MHz C iss – Input Capacitance (pF) 12 10 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage f = 1 MHz 8 9 VDS = 0 V 6 VDS = 0 V 4 6 3 5V 2 5V 0 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V) 0 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V) 100 Input Admittance vs. Frequency 100 VDG = 10 V ID = 10 mA Common–Gate Forward Admittance vs. Frequency VDG = 10 V ID = 10 mA Common–Gate –gfg 10 gig 10 (mS) (mS) big bfg 1 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f – Frequency (MHz) f – Frequency (MHz) Document Number: 70249 S-04031—Rev. E, 04-Jun-01 www.vishay.com 8-5 U430/431 Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Reverse Admittance vs. Frequency 10 VDG = 10 V ID = 10 mA Common–Gate 100 VDG = 10 V ID = 10 mA Common–Gate bog 1 (mS) (mS) –brg +grg 0.1 –grg 10 Output Admittance vs. Frequency gog 1 0.01 100 200 500 1000 f – Frequency (MHz) 0.1 100 200 500 1000 f – Frequency (MHz) Equivalent Input Noise Voltage vs. Frequency 20 VDS = 10 V 120 150 Output Conductance vs. Drain Current VGS(off) = –3 V gos – Output Conductance (µS) VDS = 10 V f = 1 kHz en – Noise Voltage nV / Hz 16 ID = 1 mA 12 90 TA = –55_C 8 60 25_C 4 ID = 10 mA 30 125_C 0 0 10 100 1k f – Frequency (Hz) 10 k 100 k 0.1 1 ID – Drain Current (mA) 10 www.vishay.com 8-6 Document Number: 70249 S-04031—Rev. E, 04-Jun-01