UFB120FA20P

UFB120FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package (VISOL = 2500 VAC) • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage SOT-227 • Optimized for power conversion: welding and industrial SMPS applications • Industry standard outline • Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY VR IF(AV) at TC = 90 °C trr 200 V 120 A 28 ns DESCRIPTION The UFB120FA20P insulated modules integrate two state of the art Vishay Semiconductors ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 90 °C TC = 25 °C TC = 90 °C Any terminal to case, t = 1 min TEST CONDITIONS MAX. 200 60 A 850 110 2500 - 55 to 150 W V °C UNITS V Document Number: 94522 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 UFB120FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM IR = 100 μA IF = 60 A IF = 60 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V TEST CONDITIONS MIN. 200 TYP. 0.96 0.79 105 MAX. 1.13 0.90 100 1.0 μA mA pF V UNITS Reverse leakage current Junction capacitance IRM CT DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 200 A/μs VR = 100 V MIN. TYP. 32 64 4.0 8.2 64 263 MAX. 28 A nC ns UNITS Reverse recovery charge Qrr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single diode conducting Junction to case, both diodes conducting Case to heatsink Weight Mounting torque SYMBOL TEST CONDITIONS MIN. RthJC RthCS Flat, greased surface 0.4 0.05 30 1.3 0.55 g Nm TYP. 0.8 MAX. 1.1 K/W UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94522 Revision: 21-Jul-10 UFB120FA20P Insulated Ultrafast Rectifier Module, 120 A 100 Vishay Semiconductors 1000 Reverse Current - I R (µA) Tj = 150˚C 10 1 0.1 0.01 0.001 0 50 100 125˚C 25˚C Instantaneous Forward Current - I F (A) 100 150 200 Reverse Voltage - VR (V) Tj = 150˚C Tj = 125˚C Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Tj = 25˚C 10 1 0.2 Junction Capacitance - C T (pF) Tj = 25˚C 100 0.6 1 1.4 1.8 1 10 100 1000 Forward Voltage Drop - VFM (V) Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Diode) 10 (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage thJC Thermal Impedance Z 1 Single Pulse (Thermal Impedance) PDM t1 0.1 Notes: 1. Duty factor D = t1/ t2 t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (Seconds) 1 10 Fig. 4 - Maximum Thermal Impedance ZthJC (Per Diode) Document Number: 94522 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 UFB120FA20P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A 80 150 Allowable Case Temperature (°C) 70 60 50 trr ( ns ) If = 50A Vrr = 200V 140 130 120 110 100 Square wave (D = 0.50) 80% Rated Vr applied Tj = 125˚C DC 40 30 20 Tj = 25˚C 90 see note (1) 80 0 10 20 30 40 50 60 70 Average Forward Current - IF(AV) (A) 10 0 100 dIF /dt (A/µs ) 1000 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Diode) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 800 60 Average Power Loss ( Watts ) 700 RMS Limit If = 50A Vrr = 200V 50 40 30 20 10 0 0 10 20 30 600 DC D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 Qrr ( nC ) 500 400 300 200 70 Tj = 125˚C 40 50 60 100 0 100 Tj = 25˚C Average Forward Current - I F(AV) (A) 1000 dIF /dt (A/µs ) Fig. 6 - Forward Power Loss (Per Diode) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94522 Revision: 21-Jul-10 UFB120FA20P Insulated Ultrafast Rectifier Module, 120 A VR = 200 V Vishay Semiconductors 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94522 Revision: 21-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 UFB120FA20P Vishay Semiconductors ORDERING INFORMATION TABLE Device code Insulated Ultrafast Rectifier Module, 120 A UF 1 1 2 3 4 5 6 7 - B 2 120 3 F 4 A 5 20 6 P 7 Ultrafast rectifier Ultrafast Pt diffused Current rating (120 = 120 A) Circuit configuration (2 separate diodes, parallel pin-out) Package indicator (SOT-227 standard isolated base) Voltage rating (20 = 200 V) P = Lead (Pb)-free CIRCUIT CONFIGURATION 1 4 2 3 LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94522 Revision: 21-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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