UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 120 A
FEATURES
• Two fully independent diodes • Ceramic fully insulated package (VISOL = 2500 VAC) • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage
SOT-227
• Optimized for power conversion: welding and industrial SMPS applications • Industry standard outline • Plug-in compatible with other SOT-227 packages • Easy to assemble • Direct mounting to heatsink • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level
DESCRIPTION PRODUCT SUMMARY
VR IF(AV) at TC = 65 °C trr 400 V 120 A 35 ns
The UFB120FA40P insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life time control, provide a ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, dc-to-dc converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 65 °C TC = 25 °C TC = 90 °C Any terminal to case, t = 1 minute TEST CONDITIONS MAX. 400 60 800 96 2500 - 55 to 150 °C UNITS V A W V °C
Document Number: 94086 Revision: 21-Jul-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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UFB120FA40P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 120 A
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM IRM CT IR = 100 μA IF = 60 A IF = 60 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 400 V TEST CONDITIONS MIN. 400 TYP. 1.16 0.96 67 MAX. 1.37 1.13 0.1 1 mA pF V UNITS
Reverse leakage current Junction capacitance
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 200 A/μs VR = 200 V MIN. TYP. 30 65 128 7.4 17.8 240 1139 MAX. 35 A ns UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Junction to case, single diode conducting Junction to case, both diodes conducting Case to heatsink Weight Mounting torque SYMBOL RthJC RthCS Flat, greased surface TEST CONDITIONS MIN. TYP. 0.99 0.49 0.05 30 1.3 MAX. 1.24 0.62 g Nm °C/W UNITS
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94086 Revision: 21-Jul-10
UFB120FA40P
Insulated Ultrafast Rectifier Module, 120 A
IF - Instantaneous Forward Current (A)
1000 100 TJ = 150 °C
Vishay Semiconductors
IR - Reverse Current (µA)
10
TJ = 125 °C
100
1
10
TJ = 150 °C TJ = 125 °C TJ = 25 °C
0.1 TJ = 25 °C 0.01
1 0 0.5 1.0 1.5 2.0
0.001 0 100 200 300 400
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode)
1000
VR - Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10 1 10 100 1000
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
10
1
PDM t1
0.1
Single pulse (thermal resistance)
t2
Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1
0.01 0.0001
.
10
0.001
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC (Per Diode)
Document Number: 94086 Revision: 21-Jul-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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UFB120FA40P
Vishay Semiconductors
160
Insulated Ultrafast Rectifier Module, 120 A
160 150 VRR = 200 V IF = 50 A
Allowable Case Temperature (°C)
140 120 DC Square wave (D = 0.50) 80 % rated VR applied
140 130 120
trr (ns)
100 80 60 40 20 0 10 20 30 40
TJ = 125 °C TJ = 25 °C
110 100 90 80 70
See note (1) 50 60 70
60 50 100 1000
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Avarage Forward Current (Per Diode)
70
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
3050 2550 2050 TJ = 125 °C TJ = 25 °C VRR = 200 V IF = 50 A
Average Power Loss (W)
60 50 RMS limit 40 30 20 10 DC 0 0 10 20 30 40 50 60 70 D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
Qrr (nC)
1550 1050 550 50 100
1000
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss (Per Diode)
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94086 Revision: 21-Jul-10
UFB120FA40P
Insulated Ultrafast Rectifier Module, 120 A
VR = 200 V
Vishay Semiconductors
0.01 Ω L = 70 μH D.U.T.
dIF/dt adjust
D G IRFP250 S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
IF
0
trr ta tb
Qrr
(2)
(4)
IRRM
0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM
(1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2
(5) dI(rec)M/dt - peak rate of change of current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94086 Revision: 21-Jul-10
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UFB120FA40P
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
Insulated Ultrafast Rectifier Module, 120 A
UF
1 1 2 3 4 5 6 7 -
B
2
120
3
F
4
A
5
40
6
P
7
Ultrafast rectifier Ultrafast Pt diffused Current rating (120 = 120 A) Circuit configuration (2 separate diodes, parallel pin-out) Package indicator (SOT-227 standard isolated base) Voltage rating (40 = 400 V) None = Standard production P = Lead (Pb)-free
Quantity per tube is 10, M4 screw and washer included
CIRCUIT CONFIGURATION
1 4
2
3
LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94086 Revision: 21-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45°
0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005)
12.30 (0.484) 11.80 (0.464)
Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter
Document Number: 95036 Revision: 28-Aug-07
For technical questions, contact: indmodules@vishay.com
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Vishay
Disclaimer
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Document Number: 91000 Revision: 11-Mar-11
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