UFB130FA20

VS-UFB130FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A FEATURES • Two fully independent diodes • Fully insulated package • Ultrafast, soft reverse recovery, with high operation junction temperature (TJ max. = 175 °C) • Low forward voltage drop SOT-227 • Optimized for power conversion: welding and industrial SMPS applications • Easy to use and parallel • Industry standard outline • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY VR IF(AV) per module at TC = 116 °C trr Type 200 V 130 A 32 ns Modules - Diode FRED Pt® The VS-UFB130FA20 insulated modules integrate two state of the art ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The diodes structure, and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current per diode Single pulse forward current per diode Maximum power dissipation per module RMS isolation voltage Operating junction and storage temperatures SYMBOL VR IF IFSM PD VISOL TJ, TStg TC = 124 °C TC = 25 °C TC = 124 °C Any terminal to case, t = 1 minute TEST CONDITIONS MAX. 200 65 890 119 2500 - 55 to 175 UNITS V A W V °C Document Number: 93606 Revision: 12-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage Forward voltage SYMBOL VBR VFM IRM CT IR = 100 μA IF = 60 A IF = 60 A, TJ = 175 °C VR = VR rated TJ = 175 °C, VR = VR rated VR = 200 V TEST CONDITIONS MIN. 200 TYP. 0.96 0.75 2 105 MAX. 1.13 0.89 50 1 μA mA pF V UNITS Reverse leakage current Junction capacitance DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 50 A dIF/dt = 200 A/μs VR = 100 V MIN. TYP. 32 42 68 4.0 9.0 82 295 MAX. A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Junction to case, single leg conducting Junction to case, both leg conducting Case to heatsink Weight Mounting torque Case style SYMBOL RthJC RthCS Flat, greased surface TEST CONDITIONS MIN. TYP. 0.10 30 1.3 SOT-227 MAX. 0.86 0.43 g Nm °C/W UNITS www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 93606 Revision: 12-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 Insulated Ultrafast Rectifier Module, 130 A Vishay Semiconductors IF - Instantaneous Forward Current (A) 1000 1000 100 IR - Reverse Current (µA) 100 10 1 0.1 0.01 0.001 TJ = 175 °C 10 TJ = 175 °C TJ = 25 °C TJ = 25 °C 1 0 0.5 1 1.5 2 2.5 0 50 100 150 200 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Leg) 1000 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Junction Capacitance - CT (pF) TJ = 25 °C 100 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 ZthJC - Thermal Impedance (°C/W) DC 0.1 PDM t1 Single pulse (thermal resistance) t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 1 0.01 0.0001 . 10 0.001 0.01 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Diode) Document Number: 93606 Revision: 12-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A 175 Allowable Case Temperature (°C) 150 125 DC 80 70 60 IF = 50 A Vrr = 200 V TJ = 125 °C 100 75 50 25 0 0 20 40 60 80 100 120 140 160 IF(AV) - Average Forward Current Fig. 5 - Maximum Allowable Case Temperature vs. Avarage Forward Current (Per Leg) Square Wave (d = 0.5) Rated VR applied trr (ns) 50 40 30 20 10 0 100 TJ = 25 °C 1000 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 150 Average Power Loss (W) 125 100 75 50 25 DC RMS Limit D = 0.05 D = 0.10 D = 0.20 D = 0.33 D = 0.50 800 700 600 IF = 50 A Vrr = 200 V Qrr (nC) 500 400 300 200 100 0 100 TJ = 125 °C TJ = 25 °C 0 0 10 20 30 40 50 60 70 80 90 100 110 120 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics (Per Leg) 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 93606 Revision: 12-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 Insulated Ultrafast Rectifier Module, 130 A Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93606 Revision: 12-May-11 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-UFB130FA20 Vishay Semiconductors Insulated Ultrafast Rectifier Module, 130 A ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 - UF 2 B 3 130 4 F 5 A 6 20 7 Vishay Semiconductors product Ultrafast rectifier Ultrafast Pt diffused Current rating (130 = 130 A) Circuit configuration (2 separate diodes, parallel pin-out) Package indicator (SOT-227 standard isolated base) Voltage rating (20 = 200 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING Lead Assignment 2 separate diodes, parallel pin-out 4 3 4 3 F 1 2 1 2 LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95423 www.vishay.com/doc?95425 www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 93606 Revision: 12-May-11 This document is subject to change without notice. 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